Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
25 words
A dry etching method in which etching is applied to material to be etched including transition metal using an etching gas containing carbon oxide gas.
Claim 2
Dependent Claim
25 words
A dry etching method in which etching is applied to material to be etched including transition metal using an etching gas containing carbon oxide gas.
Claim 3
Dependent Claim
28 words
A dry etching method as set forth in claim 1, wherein said carbon oxide gas is carbon monoxide gas, carbon dioxide gas, or mixed gas of these gases.
Claim 4
Dependent Claim
51 words
A dry etching method as set forth in claim 1, wherein carbon oxide gas in a range where the ratio R of the number of molecules is expressed by R = X/3 to 200X is contained in said etching gas where X is the ratio of number of transition metal atoms.
Claim 5
Dependent Claim
51 words
A dry etching method as set forth in claim 2, wherein carbon oxide gas in a range where the ratio R of the number of molecules is expressed by R = X/3 to 200X is contained in said etching gas where X is the ratio of number of transition metal atoms.
Claim 6
Dependent Claim
47 words
A dry etching method as set forth in claim 1, wherein said material to be etched is aluminum-silicon alloy, said transition metal is copper, said etching gas is mixed gas of chlorine gas, boron trichloride gas, and helium gas, and said carbon oxide gas is carbon monoxide.
Claim 7
Dependent Claim
47 words
A dry etching method as set forth in claim 2, wherein said material to be etched is aluminum-silicon alloy, said transition metal is copper, said etching gas is mixed gas of chlorine gas, boron trichloride gas, and helium gas, and said carbon oxide gas is carbon monoxide.
Claim 8
Dependent Claim
47 words
A dry etching method as set forth in claim 3, wherein said material to be etched is aluminum-silicon alloy, said transition metal is copper, said etching gas is mixed gas of chlorine gas, boron trichloride gas, and helium gas, and said carbon oxide gas is carbon monoxide.
Claim 9
Dependent Claim
47 words
A dry etching method as set forth in claim 4, wherein said material to be etched is aluminum-silicon alloy, said transition metal is copper, said etching gas is mixed gas of chlorine gas, boron trichloride gas, and helium gas, and said carbon oxide gas is carbon monoxide.