Abstract An etching method for selectively eliminating carbon material deposited on a substrate is described. A layer of masking material may be applied over areas of the carbon coating whose removal is not desired. After disposing the substrate coated with the carbon material in a CVD reaction chamber, NF 3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The fluorine ions or radicals remove all unmasked carbon, leaving a carbon film pattern on the substrate which may be used in the manufacture of an IC. The carbon material elimination method can also be used for chamber cleaning to removing carbon deposited debris from the inside of the CVD reaction chamber.
A method of forming a pattern in a amorphous carbon film comprising: forming said amorphous carbon film on a substrate; covering said amorphous carbon film with a mask in accordance with a prescribed pattern; subjecting the substrate coated with said carbon film and said mask to a plasma consisting essentially of nitrogentrifluoride or sulphurhexafluoride in order to remove the part of said amorphous carbon film that is not protected by said mask; and removing said mask.
Claim 2
Independent Claim
76 words
A method of forming a pattern in a amorphous carbon film comprising: forming said amorphous carbon film on a substrate; covering said amorphous carbon film with a mask in accordance with a prescribed pattern; subjecting the substrate coated with said carbon film and said mask to a plasma consisting essentially of nitrogentrifluoride or sulphurhexafluoride in order to remove the part of said amorphous carbon film that is not protected by said mask; and removing said mask.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the Vickers hardness of said carbon film is not lower than 2000 Kg/mm 2 .
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein said mask is made of a material selected from the group consisting of silicon oxide, silicon nitride or a photoresist.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein said fluorine in said plasma is fluorine in the form of NF 3 .
Claim 6
Dependent Claim
27 words
The method of claim 4 wherein said plasma is formed by subjecting said NF 3 to high frequency radiation at a power level of about 300 W.