US5302240A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device
Assignee: Toshiba Corp
•
Filing: 1993-02-19
•
Granted: 1994-04-12
•
Expires: 2013-02-19
Abstract
Abstract A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
Inventors
- 👤 Masaru Hori
- 👤 Hiroyuki Yano
- 👤 Keiji Horioka
- 👤 Hisataka Hayashi
- 👤 Sadayuki Jimbo
- 👤 Haruo Okano
- 👤 Kazuhiro Tomioka
- 👤 Yasuhiro Ito
- 👤 Haruki Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:18
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10P14/00; H10P14/60; H10P14/69; H10P14/6902; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P50/285; H10P50/286; H10P50/287; H10P50/69; H10P50/691; H10P50/692; H10P50/71; H10P76/00; H10P76/40; H10P76/405
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
107 words
A dry-etching method comprising the steps of: forming a carbon film on a substrate to be etched; forming a resist pattern on said carbon thin film; selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern; and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
Claim 2
Dependent Claim
107 words
A dry-etching method comprising the steps of: forming a carbon film on a substrate to be etched; forming a resist pattern on said carbon thin film; selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern; and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
Claim 3
Dependent Claim
53 words
A method according to claim 1, wherein the gas containing fluorine atoms is at least one selected from the group consisting of CF 4 , CHF 3 SF 6 , NF 3 , C 2 F 6 , C 3 F 8 , BF 3 , XeF 2 , and F 2 .
Claim 4
Dependent Claim
30 words
A method according to claim 1, wherein the gas containing oxygen atoms is at least one selected from the group consisting of O 2 , O 3 , and CO.
Claim 5
Dependent Claim
37 words
A method according to claim 1, wherein the gas containing fluorine atoms is CF 4 , the gas containing oxygen atoms is O 2 and a ratio of CF 4 to O 2 is 3:7 to 99:1.
Claim 6
Dependent Claim
37 words
A method according to claim 1, wherein the gas containing fluorine atoms is CHF 3 , the gas containing oxygen atoms is O 2 and a ratio of CHF 3 to O 2 is 9:1 to 25:75.
Claim 7
Dependent Claim
60 words
A method according to claim 1, wherein said substrate to be etched is at least one selected from the group consisting of an AlSiCu alloy film, an SiO 2 film, SiN film, polycrystalline silicon film, W film, Cu film, TiN film, Ti film, Ta 2 O 5 film, Nb 2 O 5 film, SrTiO 3 film and BaTiO 3 film.
Claim 8
Dependent Claim
25 words
A method according to claim 1, further comprising the steps of: heating said carbon film pattern; and removing said carbon film pattern by oxygen radicals.
Claim 9
Dependent Claim
21 words
A method according to claim 7, wherein said carbon film pattern is heated to a temperature of 100° to 500° C.
Claim 10
Dependent Claim
21 words
A method according to claim 7, wherein said carbon film pattern is heated to a temperature of 100° to 300° C.
Claim 11
Dependent Claim
23 words
A method according to claim 7, wherein the oxygen radicals are formed by applying a high-frequency wave to a gas containing oxygen atoms.
Claim 12
Dependent Claim
29 words
A method according to claim 10, wherein the gas containing oxygen atoms is at least one selected from the group consisting of O 2 O 3 , and CO.
Claim 13
Dependent Claim
63 words
A method according to claim 10, wherein the gas containing oxygen atoms is a gas mixture of O 2 and at least one selected from the group consisting of CF 4 , CHF 3 SF 6 , NF 3 , CF 4 , C 2 F 6 , C 3 F 8 , BF 3 , XeF 2 , and F 2 .
Claim 14
Dependent Claim
84 words
A dry-etching method comprising the steps of: forming a carbon film on a substrate to be etched; forming a resist pattern on said carbon thin film; selectively etching said carbon film using said resist pattern as a mask to form a carbon film pattern., selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks; heating said carbon film pattern; and removing said carbon film pattern by oxygen radicals.
Claim 15
Dependent Claim
84 words
A dry-etching method comprising the steps of: forming a carbon film on a substrate to be etched; forming a resist pattern on said carbon thin film; selectively etching said carbon film using said resist pattern as a mask to form a carbon film pattern., selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks; heating said carbon film pattern; and removing said carbon film pattern by oxygen radicals.
Claim 16
Dependent Claim
21 words
A method according to claim 13, wherein said carbon film pattern is heated to a temperature of 100° to 500° C.
Claim 17
Dependent Claim
21 words
A method according to claim 13, wherein said carbon film pattern is heated to a temperature of 100° to 300° C.
Claim 18
Dependent Claim
23 words
A method according to claim 13, wherein the oxygen radicals are formed by applying a high-frequency wave to a gas containing oxygen atoms.
Claim 19
Dependent Claim
29 words
A method according to claim 16, wherein the gas containing oxygen atoms is at least one selected from the group consisting of O 2 O 3 , and CO.
Claim 20
Dependent Claim
63 words
A method according to claim 16, wherein the gas containing oxygen atoms is a gas mixture of O 2 and at least one selected from the group consisting of CF 4 , CHF 3 SF 6 , NF 3 , CF 4 , C 2 F 6 , C 3 F 8 , BF 3 , XeF 2 , and F 2 .
Claim 21
Dependent Claim
34 words
A method according to claim 13, further comprising the step of removing said resist pattern after the step of forming said carbon film pattern or the step selectively etching said substrate to be etched.
Claim 22
Dependent Claim
27 words
A method according to claim 13, wherein said resist pattern is removed simultaneously with said carbon film pattern in the step of removing said carbon film pattern.
Claim 23
Dependent Claim
42 words
A method according to claim 13, wherein after said substrate to be etched is selectively etched, said resist pattern is removed by the oxygen radicals, and said carbon film pattern is heated to remove said carbon film pattern by the oxygen radicals.
Claim 24
Dependent Claim
50 words
A method according to claim 13, wherein after said substrate to be etched is selectively etched, said resist pattern is removed by the oxygen radicals at a first position, and said carbon film pattern is heated at a second position to remove said carbon film pattern by the oxygen radicals.
References Cited (Backward Citations)
US5022959A
Cited
US5240554A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-11 | 1997-10-11 | 1998-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-11 | 2001-10-11 | 2002-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-11 | 2005-10-11 | 2006-04-12 | $7700.00 | Window Closed / Lapsed |