← Back to Patent Explorer
US5930655A Expired / Lapsed US ⏱️ 0.0 years remaining

Fluorine barrier layer between conductor and insulator for degradation prevention

Assignee: International Business Machines Corp
•
Filing: 1997-09-25
•
Granted: 1999-07-27
•
Expires: 2017-09-25
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

Inventors

  • 👤 Edward C. Cooney, III
  • 👤 Hyun K. Lee
  • 👤 Thomas L. McDevitt
  • 👤 Anthony K. Stamper

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/074; H10W20/075; H10W20/076; H10W20/077; H10W20/081; H10W20/093; H10W20/096; H10W20/097; Y; Y10; Y10S; Y10S438/00; Y10S438/963

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 65 words
A method of improving degradation resistance of metallurgy, comprising the steps of: providing an insulator film containing fluorine having a surface region; removing fluorine from said surface region of said insulator film by exposing said surface region to an ozone plasma to form a fluorine-free barrier layer on said insulator film; and forming a pattern of metal lines on top of said fluorine-free barrier layer.
Claim 2
Independent Claim 65 words
A method of improving degradation resistance of metallurgy, comprising the steps of: providing an insulator film containing fluorine having a surface region; removing fluorine from said surface region of said insulator film by exposing said surface region to an ozone plasma to form a fluorine-free barrier layer on said insulator film; and forming a pattern of metal lines on top of said fluorine-free barrier layer.
Claim 3
Dependent Claim 20 words
The method of claim 1, wherein said fluorine-free barrier layer has a thickness ranging from 1 nm to 300 nm.

References Cited (Backward Citations)

US4300989A Cited
US5181985A Cited
US5821175A Cited
US5380397A Cited
US5466638A Cited
US5306671A Cited
US5378317A Cited
US5219791A Cited
US5397748A Cited
US5423945A Cited
US5384281A Cited
US5527718A Cited
US5451543A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-07-26 2003-01-25 2003-07-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-07-26 2007-01-25 2007-07-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-07-26 2011-01-25 2011-07-27 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag