TEOS intermetal dielectric preclean for VIA formation

Claim 2

A process of forming an interconnect between two metal layers of a multi-level semiconductor integrated circuit comprising the steps of: forming a TEOS intermetal dielectric layer with a dep-etch process on a first metal layer of a semiconductor integrated circuit; precleaning said TEOS intermetal dielectric layer with a solution comprising NH 4 F; depositing a masking layer on said TEOS intermetal dielectric layer; defining a location in said masking layer where the interconnect to said first metal layer is to be formed; etching a contact opening into said TEOS intermetal dielectric layer at said location until said first metal layer is substantially revealed; removing said masking layer; and forming a second metal layer on said TEOS intermetal dielectric layer and on said first metal layer in said contact opening so that an electrical coupling between said first and second metal layers is achieved.

Claim 3

The process of claim 1 wherein said solution comprises approximately: 0.1% HF, 2.6% NH 4 F, and 97.3% Ethylene Glycol by weight.

Claim 4

The process of claim 1 wherein said solution comprises approximately: 0.5% HF, 32.8% NH 4 F, and 67.2% Ethylene Glycol by weight.

Claim 5

The process of claim 1 wherein said solution comprises approximately: 0.04% HF, 17% NH 4 F and the remainder deionized water by weight.

Claim 6

The process of claim 1 wherein said solution comprises: HF, and NH 4 F.

Claim 7

A process of forming a small inexpensive highly reliable multilevel interconnect between two metal layers of a high density multilevel semiconductor integrated circuit comprising the steps of: forming a planar TEOS intermetal dielectric layer with a dep-etch process on a first metal layer of the semiconductor integrated circuit wherein a polymer film develops on the surface of said TEOS intermetal dielectric layer during said deep-etch process; precleaning said TEOS intermetal dielectric layer with a solution comprising NH 4 F in order to remove said polymer film developed during said dep-etch process thereby increasing said TEOS intermetal dielectric layer's adhesion to photoresist; depositing a photoresist layer on said TEOS intermetal dielectric layer; defining a location in said photoresist layer where the interconnect to said first metal layer is to be formed by masking, exposing, and developing said photoresist layer; etching a first part of a contact opening into said TEOS intermetal dielectric layer at said location with a wet chemical etch; etching a second part of said contact opening into said TEOS intermetal dielectric layer by dry etching until said first metal layer is substantially revealed; removing said photoresist layer; and forming a second metal layer on said TEOS intermetal dielectric layer and on said first metal layer so that an electrical coupling between said first and second metal layers is achieved.

Claim 8

A process of forming a small inexpensive highly reliable multilevel interconnect between two metal layers of a high density multilevel semiconductor integrated circuit comprising the steps of: forming a planar TEOS intermetal dielectric layer with a dep-etch process on a first metal layer of the semiconductor integrated circuit wherein a polymer film develops on the surface of said TEOS intermetal dielectric layer during said deep-etch process; precleaning said TEOS intermetal dielectric layer with a solution comprising NH 4 F in order to remove said polymer film developed during said dep-etch process thereby increasing said TEOS intermetal dielectric layer's adhesion to photoresist; depositing a photoresist layer on said TEOS intermetal dielectric layer; defining a location in said photoresist layer where the interconnect to said first metal layer is to be formed by masking, exposing, and developing said photoresist layer; etching a first part of a contact opening into said TEOS intermetal dielectric layer at said location with a wet chemical etch; etching a second part of said contact opening into said TEOS intermetal dielectric layer by dry etching until said first metal layer is substantially revealed; removing said photoresist layer; and forming a second metal layer on said TEOS intermetal dielectric layer and on said first metal layer so that an electrical coupling between said first and second metal layers is achieved.

Claim 9

The process of claim 6 wherein said solution comprises approximately: 0.1% HF, 2.6% NH 4 F, and 97.3% Ethylene Glycol by weight.

Claim 10

The process of claim 6 wherein said solution comprises approximately: 0.5% HF, 32.8% NH 4 F, and 67.2% Ethylene Glycol by weight.

Claim 11

The process of claim 6 wherein said solution comprises approximately: 0.04% HF, 17% NH 4 F and the remainder deionized water by weight.

Claim 12

The process of claim 6 wherein said solution comprises: HF, and NH 4 F.