US4176003A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for enhancing the adhesion of photoresist to polysilicon
Assignee: LSI Logic FSI Corp
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Filing: 1978-02-22
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Granted: 1979-11-27
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Expires: 1998-02-22
Abstract
Abstract An adhesion-enhancing technique for preparing the surface of a polycrystalline silicon body to receive organic photoresist. In an exemplary procedure, the polysilicon is placed in an oxygen plasma chamber operating under rf power of about 90 milliwatts per cubic centimeter of chamber volume and a pressure of approximately 1 torr for 10 minutes to form an adhesion-enhancing oxide monolayer on the polysilicon.
Inventors
- 👤 Ronald W. Brower
- 👤 Jerome Cohen
- 👤 Peter C. Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 20:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/68; H10P14/683; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/143; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
58 words
An improved process for etching a layer of silicon in the presence of an organic photomask adhered to the surface of the silicon, comprising: forming a monolayer of oxide on the silicon by subjecting the silicon surface to an oxygen plasma; forming the organic photomask on the silicon oxide; and etching the masked silicon surface in freon plasma.
Claim 2
Dependent Claim
58 words
An improved process for etching a layer of silicon in the presence of an organic photomask adhered to the surface of the silicon, comprising: forming a monolayer of oxide on the silicon by subjecting the silicon surface to an oxygen plasma; forming the organic photomask on the silicon oxide; and etching the masked silicon surface in freon plasma.
Claim 3
Dependent Claim
13 words
The improved etching process of claim 1 wherein the silicon is polycrystalline silicon.
Claim 4
Dependent Claim
39 words
The improved etching process of claim 1 wherein the oxygen plasma is applied to the silicon for about ten minutes in a low pressure gas plasma chamber operating at rf power of about 90 milliwatts per chamber cubic centimeter.
Claim 5
Dependent Claim
116 words
A process for etching a polysilicon surface comprising: subjecting the surface in a vacuum chamber to an oxide plasma provided by rf power of about 90 milliwatts per chamber cubic centimeter operating on oxygen flowing in an ambient pressure of about 0.5-2.0 torr to form a monolayer of silicon oxide on the surface; forming an organic photoresist to a predetermined masking pattern on the polysilicon surface; and etching the polysilicon surface in a vacuum chamber in the presence of the photoresist mask by exposing the masked polysilicon surface to a freon plasma generated by rf power of about 20 milliwatts per chamber cubic centimeter operating on freon flowing in an ambient pressure of about 1.5-2.5 torr.
Claim 6
Dependent Claim
116 words
A process for etching a polysilicon surface comprising: subjecting the surface in a vacuum chamber to an oxide plasma provided by rf power of about 90 milliwatts per chamber cubic centimeter operating on oxygen flowing in an ambient pressure of about 0.5-2.0 torr to form a monolayer of silicon oxide on the surface; forming an organic photoresist to a predetermined masking pattern on the polysilicon surface; and etching the polysilicon surface in a vacuum chamber in the presence of the photoresist mask by exposing the masked polysilicon surface to a freon plasma generated by rf power of about 20 milliwatts per chamber cubic centimeter operating on freon flowing in an ambient pressure of about 1.5-2.5 torr.
Claim 7
Dependent Claim
23 words
The process of claim 1 or 4 wherein the oxygen plasma oxidation technique is employed after the etching step to remove the photoresist.
Claim 8
Dependent Claim
26 words
The process for etching a polysilicon surface according to claim 4, wherein the chamber used for oxidizing the polysilicon surface is used for etching the surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-11-26 | 1983-05-28 | 1983-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-11-26 | 1987-05-28 | 1987-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-11-26 | 1991-05-28 | 1991-11-27 | $7700.00 | Window Closed / Lapsed |