US4026733A
Expired / Lapsed
US
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Process for defining polycrystalline silicon patterns
Assignee: Intel Corp
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Filing: 1975-10-29
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Granted: 1977-05-31
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Expires: 1995-10-29
Abstract
Abstract A process and method for accurately defining polycrystalline silicon patterns from a masking member. The critical dimensions of the silicon patterns are controlled by a diffusion step. Self-limiting etching is achieved through use of an etchant which discriminates between doped and undoped polycrystalline silicon. The process which provides significant advantages in production processing, permits fabrication of narrower gates and smoother edges on elongated silicon strips.
Inventors
- 👤 William H. Owen, III
- 👤 Charles H. R. Steele
- 👤 Richard D. Pashley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 09:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/011; H10P; H10P32/00; H10P32/30; H10P32/302; H10P50/00; H10P50/20; H10P50/26; H10P50/262; H10P50/263; Y; Y10; Y10S; Y10S148/00; Y10S148/122; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
81 words
A process for selectively etching a polycrystalline silicon layer to define a region of said layer comprising the steps of: forming a masking member on said polycrystalline silicon layer; diffusing an impurity into said polycrystalline silicon layer in alignment with said masking member and including predetermined lateral diffusion beneath said masking member; removing said masking member; subjecting said polycrystalline silicon layer to an etchant which selectively removes the doped silicon; whereby a narrower polycrystalline silicon region may be more controllably etched.
Claim 2
Dependent Claim
81 words
A process for selectively etching a polycrystalline silicon layer to define a region of said layer comprising the steps of: forming a masking member on said polycrystalline silicon layer; diffusing an impurity into said polycrystalline silicon layer in alignment with said masking member and including predetermined lateral diffusion beneath said masking member; removing said masking member; subjecting said polycrystalline silicon layer to an etchant which selectively removes the doped silicon; whereby a narrower polycrystalline silicon region may be more controllably etched.
Claim 3
Dependent Claim
101 words
A process for selectively etching a polycrystalline silicon layer on a silicon substrate to define the gate region of an MOS field-effect transistor where said gate region has a predetermined width, comprising the steps of: forming a gate masking member on said polycrystalline silicon layer; diffusing an impurity into said polycrystalline silicon layer such that the dopant extends beneath said gate masking member thereby defining said predetermined width of said gate region; removing said masking member; subjecting said polycrystalline silicon layer to an etchant which selectively removes the doped silicon, whereby a narrower polycrystalline silicon region may be more controllably etched.
Claim 4
Dependent Claim
101 words
A process for selectively etching a polycrystalline silicon layer on a silicon substrate to define the gate region of an MOS field-effect transistor where said gate region has a predetermined width, comprising the steps of: forming a gate masking member on said polycrystalline silicon layer; diffusing an impurity into said polycrystalline silicon layer such that the dopant extends beneath said gate masking member thereby defining said predetermined width of said gate region; removing said masking member; subjecting said polycrystalline silicon layer to an etchant which selectively removes the doped silicon, whereby a narrower polycrystalline silicon region may be more controllably etched.
Claim 5
Dependent Claim
11 words
The process defined by claim 2 wherein said impurity comprises phosphorus.
Claim 6
Dependent Claim
17 words
The process defined by claim 2 wherein said etchant comprises hydrofluoric acid, acetic acid and nitric acid.
Claim 7
Dependent Claim
163 words
A process for fabricating a field-effect transistor on a silicon substrate which includes a gate oxide layer disposed on said substrate and a polycrystalline silicon gate layer disposed on said oxide layer, comprising the steps of: forming a gate masking member on said polycrystalline silicon layer; diffusing an impurity into said polycrystalline silicon gate layer such that unmasked silicon is doped with said impurity, and such that said impurity extends beneath said gate masking member to define an undoped region of a predetermined width; removing said masking member; subjecting said polycrystalline silicon layer to an etchant which removes doped polycrystalline silicon, thereby defining a polycrystalline silicon gate; forming a pair of spaced-apart openings through said gate oxide layer, adjacent to said gate; and, doping regions of said substrate through said openings to form the source and drain regions of said transistor; whereby a field-effect transistor may be fabricated where the width of said silicon gate is determined in part by said diffusion step.
Claim 8
Dependent Claim
163 words
A process for fabricating a field-effect transistor on a silicon substrate which includes a gate oxide layer disposed on said substrate and a polycrystalline silicon gate layer disposed on said oxide layer, comprising the steps of: forming a gate masking member on said polycrystalline silicon layer; diffusing an impurity into said polycrystalline silicon gate layer such that unmasked silicon is doped with said impurity, and such that said impurity extends beneath said gate masking member to define an undoped region of a predetermined width; removing said masking member; subjecting said polycrystalline silicon layer to an etchant which removes doped polycrystalline silicon, thereby defining a polycrystalline silicon gate; forming a pair of spaced-apart openings through said gate oxide layer, adjacent to said gate; and, doping regions of said substrate through said openings to form the source and drain regions of said transistor; whereby a field-effect transistor may be fabricated where the width of said silicon gate is determined in part by said diffusion step.
Claim 9
Dependent Claim
16 words
The process defined by claim 5 wherein said source and drain regions are doped with arsenic.
Claim 10
Dependent Claim
19 words
The process defined by claim 5 wherein said source and drain regions are doped with arsenic through ion implantation.
Claim 11
Dependent Claim
17 words
The process defined by claim 5 wherein said impurity diffused into said polycrystalline silicon layer comprises phosphorus.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-30 | 1980-11-29 | 1981-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-30 | 1984-11-29 | 1985-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-30 | 1988-11-29 | 1989-05-31 | $7700.00 | Window Closed / Lapsed |