US4980301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing mobile ion contamination in semiconductor integrated circuits
Assignee: Nokia Bell Labs
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Filing: 1990-02-23
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Granted: 1990-12-25
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Expires: 2010-02-23
Abstract
Abstract In a method of fabricating semiconductor integrated circuits, the effects of mobile ion contamination in a dielectric layer which has been subjected to a source of mobile ion contamination, e.g., reactive ion etching, is substantially eliminated by removing substantially only the topmost portion of the dielectric layer, e.g., 10-15 nm of an 800 nm layer, promptly after performing the step which produced the source of contamination.
Inventors
- 👤 Alain S. Harrus
- 👤 Graham W. Hills
- 👤 Cris W. Lawrence
- 👤 Morgan J. Thoma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:08
CPC Classifications
H; H10; H10P; H10P95/00; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
86 words
A method of fabricating a semiconductor integrated circuit, including the step of planarizing a dielectric layer disposed over a silicon substrate, wherein said planarizing is accomplished by steps comprising dry anisotropic etching of said dielectric layer, characterized by the further step of wet etching only the topmost portions of the dielectric layer after the planarizing step, thereby to remove substantially all of the mobile ion contamination from the dielectric layer that is introduced by said planarizing step; and thereafter forming contact windows in said dielectric layer.
Claim 2
Independent Claim
86 words
A method of fabricating a semiconductor integrated circuit, including the step of planarizing a dielectric layer disposed over a silicon substrate, wherein said planarizing is accomplished by steps comprising dry anisotropic etching of said dielectric layer, characterized by the further step of wet etching only the topmost portions of the dielectric layer after the planarizing step, thereby to remove substantially all of the mobile ion contamination from the dielectric layer that is introduced by said planarizing step; and thereafter forming contact windows in said dielectric layer.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the wet etching employs hydrofluoric acid.
Claim 4
Dependent Claim
28 words
The method of claim 1 wherein the dielectric layer is of thickness greater than about 600 nm and the topmost portion removed is less than about 100 nm.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said dry anisotropic etching is reactive ion etching.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein said dielectric layer is a deposited second dielectric layer disposed over a first dielectric layer on which is disposed a first level of metal interconnection.
Claim 7
Dependent Claim
12 words
The method of claim 5 wherein the second dielectric layer is PETEOS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |