Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors

Claim 2

Process for making structures including E 2 PROM nonvolatile memory cells with self-aligned layers of silicon and associated selection and circuitry transistors comprising the steps of: a. a first layer of polycrystalline silicon on a substrate of monocrystalline silicon furnished in advance with field oxide and gate oxide, b. etching said first silicon layer, c. growing a thin intermediate layer of oxide on said first silicon layer, d. etching said intermediate oxide layer in the areas intended for formation of the selection and circuitry transistors, wherein said etching forms a narrow window for at least each selection transistor; e. depositing a second layer of polycrystalline silicon, and f. performing a final etching of the two silicon layers and of the intermediate oxide layer at the sides of the cell and transistor areas using a mask formed in such a manner as to superimpose on the second silicon layer, at least in the selection transistor areas, a covering wider than the corresponding window in the intermediate oxide layer.

Claim 3

Process in accordance with claim 1 wherein said etching of the intermediate oxide layer forms a narrow window for each said circuitry transistor, and said final etching of the two silicon layers and of the intermediate oxide layer are performed using a mask formed in such a manner as to superimpose on the second silicon layer a covering wider than the corresponding window in the intermediate oxide layer for each circuitry transistor.

Claim 4

Process in accordance with claim 1 further comprising between the steps of depositing the second silicon layer and performing the final etching of the two silicon layers and the intermediate oxide layer the step of growing an oxide layer over the second silicon layer.

Claim 5

Process for making structures including E 2 PROM nonvolatile memory cells with self-aligned layers of silicon and associated selection and circuitry transistors comprising the steps of: a. depositing a first layer of polycrystalline silicon on a substrate of monocrystalline silicon furnished in advance with field oxide and gate oxide, b. etching said first silicon layer, c. growing a thin intermediate layer of oxide on said first silicon layer, d. etching said intermediate oxide layer in the areas intended for formation of the selection and circuitry transistors, wherein said etching forms a narrow window for at least each selection transistor; e. growing an oxide layer over the second silicon layer, and f. performing a final etching that includes the steps of (1) masking the cell area, selection transistor area and circuitry transistor area; (2) etching the oxide layer grown over the second silicon layer, the second silicon layer and the intermediate oxide layer at the sides of the cell areas, the sides of the selection transistor areas, and etching the oxide layer grown over the second silicon layer, the two silicon layers and the gate oxide at the sides of the circuitry transistor areas; (3) removing the preceding masking and applying a further masking that superimposes a covering over the selection transistor areas that is wider than the oxide windows associated therewith; and (4) etching the first silicon layer at the sides of the cell and selection transistor areas.

Claim 6

Process for making structures including E 2 PROM nonvolatile memory cells with self-aligned layers of silicon and associated selection and circuitry transistors comprising the steps of: a. depositing a first layer of polycrystalline silicon on a substrate of monocrystalline silicon furnished in advance with field oxide and gate oxide, b. etching said first silicon layer, c. growing a thin intermediate layer of oxide on said first silicon layer, d. etching said intermediate oxide layer in the areas intended for formation of the selection and circuitry transistors, wherein said etching forms a narrow window for at least each selection transistor; e. growing an oxide layer over the second silicon layer, and f. performing a final etching that includes the steps of (1) masking the cell area, selection transistor area and circuitry transistor area; (2) etching the oxide layer grown over the second silicon layer, the second silicon layer and the intermediate oxide layer at the sides of the cell areas, the sides of the selection transistor areas, and etching the oxide layer grown over the second silicon layer, the two silicon layers and the gate oxide at the sides of the circuitry transistor areas; (3) removing the preceding masking and applying a further masking that superimposes a covering over the selection transistor areas that is wider than the oxide windows associated therewith; and (4) etching the first silicon layer at the sides of the cell and selection transistor areas.

Claim 7

Process for making structures including E 2 PROM nonvolatile memory cells with self-aligned layers of silicon and associated selection and circuitry transistors comprising the steps of: a. depositing a first layer of polycrystalline silicon on a substrate of monocrystalline silicon furnished in advance with field oxide and gate oxide, b. etching said first silicon layer, c. growing a thin intermediate layer of oxide on said first silicon layer, d. etching said intermediate oxide layer in the areas intended for formation of the selection and circuitry transistors, wherein said etching forms a narrow window for at least each selection transistor; e. depositing a second layer of polycrystalline silicon, and f. performing a final etching that includes the steps of (1) covering the entire zone that includes the cell and selection transistor areas and the circuitry transistor areas and gate oxide in an unprotected intermediate region; (2) removing the preceding covering and applying a masking covering to the cell and selection transistor areas and to the circuitry transistor areas and to adjacent uncovered monocrystalline silicon zones, wherein said masking covering superimposes on the second silicon layer, at least in the selection transistor areas, a covering wider than the window that corresponds thereto; and (3) etching the second silicon layer and the intermediate oxide layer and then the first silicon layer at the sides of the protected areas.

Claim 8

Process for making structures including E 2 PROM nonvolatile memory cells with self-aligned layers of silicon and associated selection and circuitry transistors comprising the steps of: a. depositing a first layer of polycrystalline silicon on a substrate of monocrystalline silicon furnished in advance with field oxide and gate oxide, b. etching said first silicon layer, c. growing a thin intermediate layer of oxide on said first silicon layer, d. etching said intermediate oxide layer in the areas intended for formation of the selection and circuitry transistors, wherein said etching forms a narrow window for at least each selection transistor; e. depositing a second layer of polycrystalline silicon, and f. performing a final etching that includes the steps of (1) covering the entire zone that includes the cell and selection transistor areas and the circuitry transistor areas and gate oxide in an unprotected intermediate region; (2) removing the preceding covering and applying a masking covering to the cell and selection transistor areas and to the circuitry transistor areas and to adjacent uncovered monocrystalline silicon zones, wherein said masking covering superimposes on the second silicon layer, at least in the selection transistor areas, a covering wider than the window that corresponds thereto; and (3) etching the second silicon layer and the intermediate oxide layer and then the first silicon layer at the sides of the protected areas.