Method of producing a monolithically integrated two-transistor memory cell in accordance with MOS technology

Claim 2

In a method of producing a monolithically integrated two-transistor memory cell in accordance with MOS technology, including a silicon crystal for accommodating the memory cell and having a surface, a first MOS field effect transistor for information storage having a current-carrying channel and both a control gate and a floating gate located between the control gate and the surface of the crystal, a second MOS field effect transistor having a current-carrying channel and a control gate, an SiO 2 film supporting the gates, a doped polycrystalline silicon layer deposited on the SiO 2 film, the control gates and the floating gate being formed by masked etching technology of the doped polycrystalline silicon layer, and an erase area apart from the current-carrying channel of the two MOS field effect transistors of the memory cell for the floating gate of the first MOS field effect transistor, the improvement which comprises preparing the surface of the silicon crystal for implantation, initially covering a part of the surface of the silicon crystal intended for the memory cell with an SiO 2 film by thermal oxidation forming a part of the gate oxide of the first MOS field effect transistor of the memory cell, forming a window through the SiO 2 film at a location intended for the erase area of the memory cell exposing an area of the surface of the silicon crystal and leaving remaining areas of the SiO 2 film, subsequenty re-oxidizing the exposed area of the surface of the crystal in the window in the erase area and simultaneously increasing the remaining areas of the SiO 2 film to a given final thickness of the gate oxide in a further joint oxidation process producing a new thinner SiO 2 film in the window in the erase area, subsequently depositing a first doped polycrystalline silicon layer forming a base of the floating gate of the first MOS field effect transistor on the gate oxide film including the new thinner SiO 2 film, covering the doped polycrystalline silicon layer with another SiO 2 film at least in the part thereof forming the floating gate, depositing a second doped polycrystalline silicon layer on the other SiO 2 film, and forming the control gates of the first and of the second MOS field effect transistors from the second doped polycrystalline silicon layer and producing the source and drain zones of the two MOS field effect transistors by at least one of diffusion and implantation at sites on the surface of the crystal uncovered for this purpose.

Claim 3

Method according to claim 1, which comprises etching away the first doped polycrystalline layer again after it is deposited from the oxide film supporting it at the side of the source and drain area of the first transistor and at an edge of the window in the intended erase area uncovering parts of the oxide film, the edge facing away from the floating gate to be formed, and leaving the first doped polycrystalline layer intact at least at the site of the floating gate to be formed, and subsequently removing the uncovered parts of the oxide film from the surface of the silicon crystal supporting them.

Claim 4

Method according to claim 2, which comprises removing the first polycrystalline silicon layer and the oxide film from the part of the surface of the silicon crystal intended for the second MOS field effect transistor.

Claim 5

Method according to claim 2 or 3, which comprises producing a coherent oxide film by a joint oxidation process at surface locations of the silicon crystal uncovered again directly after producing the first polycrystalline silicon layer and on the surface of the remaining parts of the first polycrystalline layer, and depositing the second polycrystalline silicon layer on the coherent oxide film forming the base of the control gate of the first MOS field effect transistor and forming the base of the control gate of the second field effect transistor.

Claim 6

Method according to claim 4, which comprises forming the control gate of the first MOS field effect transistor and forming the control gate of the second MOS field effect transistor from the second polycrystalline silicon layer by masked etching initially, and subsequently using one of the control gate of the first effect transistor and the etching mask covering it to form the floating gate from the first polycrystalline silicon layer.

Claim 7

Method according to claim 1, which comprises keeping the oxide film located under the floating gate directly after the formation of the floating gate of the first MOS field effect transistor intact without further erosion to avoid oxide fillets.

Claim 8

Method according to claim 1, which comprises providing an implantation treatment with a doping material producing the conductivity type of the source and drain zone of the MOS field effect transistors at least at the site of the first transistor following the production of the gates of both transistors, and adjusting the implantation conditions for allowing incident ions of the doping material to be implanted to travel into the silicon crystal exclusively where the crystal is covered at most by an oxide film alone and not by a combination of an oxide film and a polycrystalline silion layer.

Claim 9

Method according to claim 7, which comprises performing a diffusion treatment following the implantation with a doping material producing the same conductivity type as the implantation, at surface points of the silicon crystal not covered during the implantation, and restricting the diffusion treatment to those points alone.

Claim 10

In a method of producing a monolithically integrated two-transistor memory cell in accordance with MOS technology, including a silicon crystal for accomodating the memory cell and having a surface, a first MOS field effect transistor for information storage having a current-carrying channel and both a control gate and a floating gate disposed between the control gate and the surface of the crystal, a second MOS field effect transistor having a current-carrying channel and a control gate, an SiO 2 film supporting the gates, a doped ploycrystalline silicon layer deposited on the SiO 2 film, the control gates and the floating gate being formed by masked etching technology of the doped polycrystalline silicon layer, and an erase area apart from the current-carrying channel of the two MOS field effect transistors of the memory cell for the floating gate of the first MOS field effect transistor, the improvement which comprises preparing the surface of the silicon crystal for implantation, initially covering a part of the surface of the silicon crystal intended for the memory cell with an SiO 2 film by thermal oxidation forming a part of the gate oxide of the first MOS field effect transistor of the memory cell, forming a window through the SiO 2 film at a location intended for the erase area of the memory cell exposing an area of the surface of the silicon crystal and leaving remaining areas of the SiO 2 film, subsequently re-oxidizing the exposed area of the surface of the crystal in the window in the erase area and simultaneously increasing the remaining areas of the SiO 2 film to a given final thickness of the gate oxide in a further joint oxidation process producing a new thinner SiO 2 film in the window in the erase area, subsequently depositing a first doped ploycrystalline silicon layer forming a base of the floating gate of the first MOS field effect transistor on the gate oxide film including the new thinner SiO 2 film, covering the doped polycrystalline silicon layer with another SiO 2 film at least in the part thereof forming the floating gate, depositing a second doped polycrystalline silicon layer on the other SiO 2 film, forming the control gate of the first MOS field effect transistor from the second doped polycrystalline silicon layer and producing the source and drain zones of the two MOS field effect transistors by at least one of diffusion and implantation at sites on the surface of the crystal uncovered for this purpose, etching away the first doped polycrystalline layer again after it is deposited from the oxide film supporting it at the side of the source and drain area of the first transistor and at an edge of the window in the intended erase area uncovering parts of the oxide film, the edge facing away from the floating gate to be formed, and leaving the first doped polycrystalline layer intact at least at the site of the floating gate to be formed, subsequently removing the uncovered parts of the oxide film from the surface of the silicon crystal supporting them, removing the first polycrystalline silicon layer and the oxide film from the part of the surface of the silicon cyrstal intended for the second MOS field effect transistor, producing a cohorent oxide film by a joint oxidation process at surface locations of the silicon crystal uncovered again directly after producing the first polycrystalline silicon layer and on the surface of the remaining parts of the first polycrystalline layer, depositing the second ploycrystalline silicon layer on the coherent oxide film forming the base of the control gate of the first MOS field effect transistor and optionally forming the base of the control gate of the second field effect transistor, forming the control gate of the first MOS field effect transistor and optionally forming the control gate of the second MOS field effect transistor from the second ploycrystalline silicon layer by masked etching initially, and subsequently using one of the control gate of the first field effect transistor and the etching mask covering it to form the floating gate from the first polycrystalline silicon layer.

Claim 11

In a method of producing a monolithically integrated two-transistor memory cell in accordance with MOS technology, including a silicon crystal for accomodating the memory cell and having a surface, a first MOS field effect transistor for information storage having a current-carrying channel and both a control gate and a floating gate disposed between the control gate and the surface of the crystal, a second MOS field effect transistor having a current-carrying channel and a control gate, an SiO 2 film supporting the gates, a doped ploycrystalline silicon layer deposited on the SiO 2 film, the control gates and the floating gate being formed by masked etching technology of the doped polycrystalline silicon layer, and an erase area apart from the current-carrying channel of the two MOS field effect transistors of the memory cell for the floating gate of the first MOS field effect transistor, the improvement which comprises preparing the surface of the silicon crystal for implantation, initially covering a part of the surface of the silicon crystal intended for the memory cell with an SiO 2 film by thermal oxidation forming a part of the gate oxide of the first MOS field effect transistor of the memory cell, forming a window through the SiO 2 film at a location intended for the erase area of the memory cell exposing an area of the surface of the silicon crystal and leaving remaining areas of the SiO 2 film, subsequently re-oxidizing the exposed area of the surface of the crystal in the window in the erase area and simultaneously increasing the remaining areas of the SiO 2 film to a given final thickness of the gate oxide in a further joint oxidation process producing a new thinner SiO 2 film in the window in the erase area, subsequently depositing a first doped ploycrystalline silicon layer forming a base of the floating gate of the first MOS field effect transistor on the gate oxide film including the new thinner SiO 2 film, covering the doped polycrystalline silicon layer with another SiO 2 film at least in the part thereof forming the floating gate, depositing a second doped polycrystalline silicon layer on the other SiO 2 film, forming the control gate of the first MOS field effect transistor from the second doped polycrystalline silicon layer and producing the source and drain zones of the two MOS field effect transistors by at least one of diffusion and implantation at sites on the surface of the crystal uncovered for this purpose, etching away the first doped polycrystalline layer again after it is deposited from the oxide film supporting it at the side of the source and drain area of the first transistor and at an edge of the window in the intended erase area uncovering parts of the oxide film, the edge facing away from the floating gate to be formed, and leaving the first doped polycrystalline layer intact at least at the site of the floating gate to be formed, subsequently removing the uncovered parts of the oxide film from the surface of the silicon crystal supporting them, removing the first polycrystalline silicon layer and the oxide film from the part of the surface of the silicon cyrstal intended for the second MOS field effect transistor, producing a cohorent oxide film by a joint oxidation process at surface locations of the silicon crystal uncovered again directly after producing the first polycrystalline silicon layer and on the surface of the remaining parts of the first polycrystalline layer, depositing the second ploycrystalline silicon layer on the coherent oxide film forming the base of the control gate of the first MOS field effect transistor and optionally forming the base of the control gate of the second field effect transistor, forming the control gate of the first MOS field effect transistor and optionally forming the control gate of the second MOS field effect transistor from the second ploycrystalline silicon layer by masked etching initially, and subsequently using one of the control gate of the first field effect transistor and the etching mask covering it to form the floating gate from the first polycrystalline silicon layer.