Method of making a floating gate memory cell

Claim 1

A method of making a floating gate storage device comprising the steps of: (a) forming a first insulating layer on a semiconductor substrate; (b) forming a first electroconductive layer on a portion of said first insulating layer; (c) forming a mask on said first electroconductive layer; (d) partially forming the gate oxide on areas not subtended by said mask; (e) removing said mask; (f) exposing said substrate to an oxidizing atmosphere to complete the formation of the gate oxide and to form a second insulating layer on the exposed portion of said first electroconductive layer; and (g) forming a second electroconductive layer on said second insulating layer and on a portion of said gate oxide.

Claim 2

A method of making a floating gate storage device comprising the steps of: (a) forming a first insulating layer on a semiconductor substrate; (b) forming a first electroconductive layer on a portion of said first insulating layer; (c) forming a mask on said first electroconductive layer; (d) partially forming the gate oxide on areas not subtended by said mask; (e) removing said mask; (f) exposing said substrate to an oxidizing atmosphere to complete the formation of the gate oxide and to form a second insulating layer on the exposed portion of said first electroconductive layer; and (g) forming a second electroconductive layer on said second insulating layer and on a portion of said gate oxide.

Claim 15

A method of making a floating gate storage device comprising the steps of: (a) forming a first insulating layer on a portion of a semiconductor substrate; (b) forming a silicon layer on said first insulating layer; (c) forming a first oxidation resistant mask on said silicon layer; (d) oxidizing the exposed portions of said semiconductor substrate to form field oxide regions; (e) removing said first oxidation resistant mask; (f) forming a second oxidation resistant mask on a portion of said silicon layer; (g) removing the portions of said silicon layer which are not subtended by said second oxidation resistant mask; (h) partially forming the gate oxide on areas not subtended by said second oxidation resistant mask; (i) removing said second oxidation resistant mask; (j) exposing said substrate to an oxidizing atmosphere to complete the formation of said gate oxide and to form a second insulating layer on the exposed portion of said silicon layer; and (k) forming an electroconductive layer on said second insulating layer and on a portion of said gate oxide.

Claim 16

A method of making a floating gate storage device comprising the steps of: (a) forming a first insulating layer on a portion of a semiconductor substrate; (b) forming a silicon layer on said first insulating layer; (c) forming a first oxidation resistant mask on said silicon layer; (d) oxidizing the exposed portions of said semiconductor substrate to form field oxide regions; (e) removing said first oxidation resistant mask; (f) forming a second oxidation resistant mask on a portion of said silicon layer; (g) removing the portions of said silicon layer which are not subtended by said second oxidation resistant mask; (h) partially forming the gate oxide on areas not subtended by said second oxidation resistant mask; (i) removing said second oxidation resistant mask; (j) exposing said substrate to an oxidizing atmosphere to complete the formation of said gate oxide and to form a second insulating layer on the exposed portion of said silicon layer; and (k) forming an electroconductive layer on said second insulating layer and on a portion of said gate oxide.