Dense nonvolatile electrically-alterable memory device with substrate coupling electrode

Claim 2

A nonvolatile, electrically-alterable floating gate memory device comprising: a semiconductor substrate; a floating gate conductor; means for dielectrically insulating said floating gate conductor; means for detecting the electrical charge on said floating gate conductor; first electrode means intermediate said substrate and said floating gate conductor for introducing electrons onto said floating gate conductor, and including means for enhancing tunneling of charge across said insulating means from said first electrode means to said floating gate conductor; second electrode means overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode means for removing electrons from said floating gate conductor, and including means for enhancing tunneling of charge across said insulating means from said floating gate conductor to said second electrode means; means for capacitively biasing said floating gate conductor comprising a bias electrode formed in said substrate and underlying at least a part of said floating gate conductor; means for dielectrically insulating said first electrode means and said second electrode means from said substrate and from each other; and a sense transistor having a source, a drain and a channel intermediate said source and said drain formed in said substrate, said channel including a first region whose conductivity is modulated by the electrical charge of said floating gate conductor, and at least one additional region positioned in a series relationship with said first region and said source and drain, whose conductivity is modulated by the present potential of said second electrode means.

Claim 3

A device in accordance with claim 1 wherein said floating gate conductor and said second electrode are positioned closer to said substrate at a point in said substrate wherein said regions are formed than at other points with respect to said substrate.

Claim 4

A nonvolatile, electrically-alterable floating gate memory device comprising: a semiconductor substrate; a floating gate conductor; means for dielectrically insulating said floating gate conductor; means for detecting the electrical charge on said floating gate conductor; first electrode means intermediate said substrate and said floating gate conductor for introducing electrons onto said floating gate conductor, and including means for enhancing tunneling of charge across said insulating means from said first electrode means to said floating gate conductor; second electrode means overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode means for removing electrons from said floating gate conductor, and including means for enhancing tunneling of charge across said dielectric insulation from said floating gate conductor to said second electrode means; means for capacitively biasing said floating gate conductor comprising a bias electrode formed in said substrate and underlying at least a part of said floating gate conductor, and further underlying at least a portion of said first and second electrode means; and means for dielectrically insulating said first electrode means and said second electrode means from said substrate and from each other.

Claim 5

A nonvolatile, electrically-alterable floating gate memory device comprising: a semiconductor substrate; a floating gate conductor; means for dielectrically insulating said floating gate conductor; means for detecting the electrical charge on said floating gate conductor; first electrode means intermediate said substrate and said floating gate conductor for introducing electrons onto said floating gate conductor, and including means for enhancing tunneling of charge across said insulating means from said first electrode means to said floating gate conductor; second electrode means overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode means for removing electrons from said floating gate conductor, and including means for enhancing tunneling of charge across said dielectric insulation from said floating gate conductor to said second electrode means; means for capacitively biasing said floating gate conductor comprising a bias electrode formed in said substrate and underlying at least a part of said floating gate conductor, and further underlying at least a portion of said first and second electrode means; and means for dielectrically insulating said first electrode means and said second electrode means from said substrate and from each other.

Claim 6

An integrated circuit memory array formed on a semiconductor substrate with a plurality of substantially like devices forming an integrated circuit memory component, each of said devices comprising: a floating gate conductor; means for dielectrically insulating said floating gate conductor; first electrode means intermediate said substrate and said floating gate conductor for introducing electrons onto said floating gate conductor and including means for enhancing tunnelling of charge across said dielectric insulation from said first electrode means to said floating gate conductor; second electrode means overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode means for removing electrons from said floating gate conductor, and including means for enhancing tunnelling of charge across said insulating means from said floating gate conductor to said second electrode means; means for capacitively biasing said floating gate conductor comprising a bias electrode formed in said substrate and underlying at least a part of said floating gate conductor; and means for dielectrically insulating said first electrode means and said second electrode means from said substrate and from each other; said second electrode means extending to contiguous memory devices in a given X axis row in said array to form X axis word select/erase lines in said array; contiguous detecting means in said array being connected by a metal conductor to form Y axis sensing lines for sensing of the present state of said floating gate conductor in a selected memory device; said first electrode means extending to contiguous memory devices in said array to form Y axis program bit lines in said array; and said bias electrode including conductor means for biasing, in common, contiguous memory devices in a given Y axis column of said array.

Claim 7

An integrated circuit memory array formed on a semiconductor substrate with a plurality of substantially like devices forming an integrated circuit memory component, each of said devices comprising: a floating gate conductor; means for dielectrically insulating said floating gate conductor; first electrode means intermediate said substrate and said floating gate conductor for introducing electrons onto said floating gate conductor and including means for enhancing tunnelling of charge across said dielectric insulation from said first electrode means to said floating gate conductor; second electrode means overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode means for removing electrons from said floating gate conductor, and including means for enhancing tunnelling of charge across said insulating means from said floating gate conductor to said second electrode means; means for capacitively biasing said floating gate conductor comprising a bias electrode formed in said substrate and underlying at least a part of said floating gate conductor; and means for dielectrically insulating said first electrode means and said second electrode means from said substrate and from each other; said second electrode means extending to contiguous memory devices in a given X axis row in said array to form X axis word select/erase lines in said array; contiguous detecting means in said array being connected by a metal conductor to form Y axis sensing lines for sensing of the present state of said floating gate conductor in a selected memory device; said first electrode means extending to contiguous memory devices in said array to form Y axis program bit lines in said array; and said bias electrode including conductor means for biasing, in common, contiguous memory devices in a given Y axis column of said array.

Claim 8

An integrated circuit memory array formed on a semiconductor substrate comprising: a plurality of substantially like integrated circuit memory devices, each of said devices including: a floating gate conductor; means for detecting the electrical charge on said floating gate conductor; a first electrode intermediate said substrate and said floating gate conductor, said first electrode being in a capacitive relationship with said floating gate conductor and dielectrically insulated from said substrate; a second electrode overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode, said second electrode being in a capacitive relationship with said floating gate conductor and dielectrically insulated from each of said first electrode and said substrate; and a bias electrode disposed in said substrate and being in a capacitive relationship with said floating gate conductor; each said capacitive relationship selected so that said bias electrode operates to capacitively couple of a first and a second potential to said floating gate conductor whereby electrons tunnel from said first electrode to said floating gate conductor when said first potential is applied to said bias electrode and electrons tunnel from said floating gate conductor to said second electrode when said second potential is applied to said bias electrode; said second electrode extending to contiguous memory devices in a given X axis row in said array to form X axis work select/erase lines in said array; contiguous detecting means in said array being connected by a metal conductor to form Y axis sensing lines for sensing the present state of said floating gate conductor in a selected memory device; said first electrode extending to contiguous memory devices in said array to form Y axis program bit lines in said array; and said bias electrode including conductor means for biasing, in common, contiguous memory devices in a given Y axis column of said array.

Claim 9

An integrated circuit memory array formed on a semiconductor substrate comprising: a plurality of substantially like integrated circuit memory devices, each of said devices including: a floating gate conductor; means for detecting the electrical charge on said floating gate conductor; a first electrode intermediate said substrate and said floating gate conductor, said first electrode being in a capacitive relationship with said floating gate conductor and dielectrically insulated from said substrate; a second electrode overlying said floating gate conductor such that said floating gate conductor is intermediate said substrate and said second electrode, said second electrode being in a capacitive relationship with said floating gate conductor and dielectrically insulated from each of said first electrode and said substrate; and a bias electrode disposed in said substrate and being in a capacitive relationship with said floating gate conductor; each said capacitive relationship selected so that said bias electrode operates to capacitively couple of a first and a second potential to said floating gate conductor whereby electrons tunnel from said first electrode to said floating gate conductor when said first potential is applied to said bias electrode and electrons tunnel from said floating gate conductor to said second electrode when said second potential is applied to said bias electrode; said second electrode extending to contiguous memory devices in a given X axis row in said array to form X axis work select/erase lines in said array; contiguous detecting means in said array being connected by a metal conductor to form Y axis sensing lines for sensing the present state of said floating gate conductor in a selected memory device; said first electrode extending to contiguous memory devices in said array to form Y axis program bit lines in said array; and said bias electrode including conductor means for biasing, in common, contiguous memory devices in a given Y axis column of said array.

Claim 10

An array in accordance with claim 5, wherein said detecting means includes a sense transistor having a source, a drain and a channel intermediate said source and said drain formed in said substrate, and further has a gate formed from a portion of said floating gate conductor, said metal conductor connecting each said source of said sence transistors in a given Y axis column.

Claim 11

An array in accordance with claim 6 wherein each said source in a given Y axis column and the associated bias electrode in each said device are electrically formed from a continuous diffused region in said substrate.