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US5091049A Expired / Lapsed US ⏱️ 0.0 years remaining

High density plasma deposition and etching apparatus

Assignee: SPTS Technologies Ltd
•
Filing: 1990-06-29
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Granted: 1992-02-25
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Expires: 2010-06-29
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Abstract

Abstract The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

Inventors

  • 👤 Gregor Campbell
  • 👤 Robert W. Conn
  • 👤 Tatsuo Shoji

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 17:23
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/3211; H01J37/32431; H01J37/3266; H01J37/32688; H05; H05H; H05H1/00; H05H1/24; H05H1/46

Claims Analysis

Total Claims: 20
Claim 1
Independent Claim 66 words
An RF ion source comprising: (a) a plasma generation chamber, an antenna means to launch rf waves into said generation chamber which act in combination with an axial magnetic field to generate a dense plasma (b) a magnetic means for providing an axial magnetic field in the generator chamber (c) ion extraction electrodes adjacent to said plasma generator so as to extract ions from the plasma.
Claim 2
Dependent Claim 66 words
An RF ion source comprising: (a) a plasma generation chamber, an antenna means to launch rf waves into said generation chamber which act in combination with an axial magnetic field to generate a dense plasma (b) a magnetic means for providing an axial magnetic field in the generator chamber (c) ion extraction electrodes adjacent to said plasma generator so as to extract ions from the plasma.
Claim 3
Dependent Claim 37 words
An antenna, comprising: (a) A first current loop, the first current loop having a current flow in a first direction; and (b) A second current loop, the second current having a current flow in a second direction.
Claim 4
Dependent Claim 37 words
An antenna, comprising: (a) A first current loop, the first current loop having a current flow in a first direction; and (b) A second current loop, the second current having a current flow in a second direction.
Claim 5
Dependent Claim 21 words
The antenna of claim 2, wherein the first direction of current flow is opposite to the second direction of current flow.
Claim 6
Dependent Claim 24 words
The antenna of claim 3, wherein the first direction of current flow is clockwise, and the second direction of current flow is counter clockwise.
Claim 7
Dependent Claim 32 words
The antenna of claim 3, wherein the first current loop resides in a first plane and the second current loop resides in a second plane, the first and second planes being parallel.
Claim 8
Dependent Claim 38 words
The antenna of claim 5, wherein the first current loop and the second current loop are separated by a distance, the distance being selected so as to satisfy the equation: [w/w.sub.c ·w.sub.p.sup.2 /c.sup.2 k.sub.z.sup.2 ].sup.2 1+(3.83/K.sub.z a).sup.2 ·
Claim 9
Dependent Claim 27 words
The antenna of claim 6, wherein the antenna radiates radio frequency electromagnetic waves, the antenna receiving radio frequency current from a first conductor and a second conductor.
Claim 10
Dependent Claim 79 words
The antenna of claim 7, wherein the first current loop has a first terminal and a second terminal, and the second current loop has a first terminal and a second terminal, the first conductor being connected to the first terminal of the first current loop and to the second terminal of the second current loop, the second conductor being connected to the second terminal of the first current loop and to the first terminal of the second current loop.
Claim 11
Dependent Claim 32 words
The antenna of claim 8, wherein the first current loop has a longitudinal axis and the second current loop has a longitudinal axis, the first and second current loops being substantially coaxial.
Claim 12
Dependent Claim 35 words
The antenna of claim 9, wherein the first terminal of the first current loop is closer to the first terminal of the second current loop than to the second terminal of the second current loop.
Claim 13
Dependent Claim 52 words
The antenna of claim 7, wherein the first current loop has a first terminal and a second terminal, the first terminal being substantially diametrically opposite to the second terminal, the second current loop having a first terminal and a second terminal, the first terminal being substantially diametrically opposite to the second terminal.
Claim 14
Dependent Claim 54 words
The antenna of claim 11, wherein the first conductor is connected to the first terminal of the second current loop, the second terminal of the second current loop is connected to the second terminal of the first current loop, and the first terminal of the first current loop is connected to the second conductor.
Claim 15
Dependent Claim 18 words
The antenna of claim 12, wherein radio frequency current flows in a first and second helically shaped path.
Claim 16
Independent Claim 73 words
A method of radiating electromagnetic waves, comprising the steps of: (a) causing electromagnetic energy to flow in a first angular direction within a first substantially planar circular loop; (b) causing the electromagnetic energy to flow in a second, opposite angular direction within a second substantially planar parallel circular loop separated by a distance from the first substantially planar circular loop so as to satisfy the equation: [w/w.sub.c ·w.sub.p.sup.2 /C.sup.2 k.sub.z.sup.2 ].sup.2 =1+(3.83/k.sub.z.sup.9).sup.2 ·
Claim 17
Independent Claim 73 words
A method of radiating electromagnetic waves, comprising the steps of: (a) causing electromagnetic energy to flow in a first angular direction within a first substantially planar circular loop; (b) causing the electromagnetic energy to flow in a second, opposite angular direction within a second substantially planar parallel circular loop separated by a distance from the first substantially planar circular loop so as to satisfy the equation: [w/w.sub.c ·w.sub.p.sup.2 /C.sup.2 k.sub.z.sup.2 ].sup.2 =1+(3.83/k.sub.z.sup.9).sup.2 ·
Claim 18
Dependent Claim 34 words
The method of radiating electromagnetic waves of claim 14, further comprising the step of causing the electromagnetic energy flowing between the first current loop and the second current loop to follow a helical path.
Claim 19
Independent Claim 94 words
A method of plasma processing, comprising the steps of: (a) radiating electromagnetic energy into a plasma generation chamber; (b) injecting a first gas into the irradiated plasma generation chamber, thereby creating a plasma; (c) generating a variable magnetic field proximate the plasma generation chamber, the variable magnetic field permitting manipulation of the plasma; (d) transporting the plasma to an adjacent process chamber; (e) injecting a second gas into the process chamber; and (f) bombarding a substrate within the process chamber with the plasma, thereby permitting coating and etching of the substrate by the plasma.
Claim 20
Independent Claim 94 words
A method of plasma processing, comprising the steps of: (a) radiating electromagnetic energy into a plasma generation chamber; (b) injecting a first gas into the irradiated plasma generation chamber, thereby creating a plasma; (c) generating a variable magnetic field proximate the plasma generation chamber, the variable magnetic field permitting manipulation of the plasma; (d) transporting the plasma to an adjacent process chamber; (e) injecting a second gas into the process chamber; and (f) bombarding a substrate within the process chamber with the plasma, thereby permitting coating and etching of the substrate by the plasma.

References Cited (Backward Citations)

US4339326A Cited
US4810935A Cited
US4776918A Cited
US4876983A Cited
US4828649A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-02-24 1995-08-26 1996-02-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-02-24 1999-08-26 2000-02-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-02-24 2003-08-26 2004-02-25 $7700.00 Window Closed / Lapsed

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