US4828649A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching an aluminum film doped with silicon
Assignee: Texas Instruments Inc
•
Filing: 1988-05-18
•
Granted: 1989-05-09
•
Expires: 2008-05-18
Abstract
Abstract A process for etch of Silicon doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, BCl 3 , and Cl 2 , and with the process chamber within the process module being generally at ambient temperatures.
Inventors
- 👤 Cecil J. Davis
- 👤 Lee M. Loewenstein
- 👤 Rhett B. Jucha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:35
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; C; C23; C23F; C23F4/00
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
78 words
A process for etch of Aluminum film doped with Silicon comprising the steps of: (a) disposing said film in a low pressure process chamber; (b) generating remote plasma from a gas comprised of a mixture of Helium, BCl 3 , and Cl 2; (c) introducing said remote plasma into said chamber and to said film; and (d) generating an in situ plasma with said chamber from a gas mixture of Helium, BCl 3 , and Cl 2 .
Claim 2
Dependent Claim
78 words
A process for etch of Aluminum film doped with Silicon comprising the steps of: (a) disposing said film in a low pressure process chamber; (b) generating remote plasma from a gas comprised of a mixture of Helium, BCl 3 , and Cl 2; (c) introducing said remote plasma into said chamber and to said film; and (d) generating an in situ plasma with said chamber from a gas mixture of Helium, BCl 3 , and Cl 2 .
Claim 3
Dependent Claim
17 words
The process as set forth in claim 1 wherein the process is carried out at ambient temeperature.
Claim 4
Dependent Claim
15 words
The process as set forth in claim 1 wherein the low pressure is 1 Torr.
Claim 5
Dependent Claim
37 words
The process as set forth in claim 1 wherein mixture for the in situ and remote plasmas has a flow comprised of Helium at 1000 sccm, BCl 3 at 80 sccm, and Cl 2 at 20 sccm.
Claim 6
Dependent Claim
29 words
The process as set forth in claim 1 wherein the power utilized for generating the remote plasma is 400 watts at 2450 MHz and 225 watts at 13.56 MHz.
Claim 7
Dependent Claim
22 words
The process as set forth in claim 1 wherein a source of hydrocarbons introduced into said chamber separately from said remote plasma.
Claim 8
Dependent Claim
58 words
A process for etching an Aluminum film doped with Silicon comprising the steps of: (a) generating free radicals from a source of boron and a source of chlorine, in a plasma generating chamber remote from the process chamber; (b) introducing the free radicals into the process chamber; and (c) generating an in situ plasma from the free radicals.
Claim 9
Dependent Claim
58 words
A process for etching an Aluminum film doped with Silicon comprising the steps of: (a) generating free radicals from a source of boron and a source of chlorine, in a plasma generating chamber remote from the process chamber; (b) introducing the free radicals into the process chamber; and (c) generating an in situ plasma from the free radicals.
Claim 10
Dependent Claim
19 words
The proces as set forth in claim 7 wherein the free radicals and in situ plasma are generated simultaneously.
Claim 11
Dependent Claim
17 words
The process as set forth in claim 7 wherein the process is carried out at ambient temperature.
Claim 12
Dependent Claim
17 words
The process as set forth in clim 7 wherein the process is carried out at 0.1 Torr.
Claim 13
Dependent Claim
17 words
The process as set forth in clim 7 wherein the process is carried out at 0.1 Torr.
Claim 14
Dependent Claim
17 words
The process as set forth in cliam 7 wherein the source of boron is BCl 3 .
Claim 15
Dependent Claim
17 words
The process as set forth in cliam 7 wherein the source of boron is BCl 3 .
Claim 16
Dependent Claim
17 words
The process as set forth in claim 7 wherein the source of chlorine is Cl 2 .
Claim 17
Dependent Claim
20 words
The process as set forth in claim 7 wherein the step of generating free radicals includes the use of helium.
Claim 18
Dependent Claim
30 words
The process as set forth in claim 7 wherein the source of boron is BCl 3 at 80 sccm and the source of chlorine is Cl 2 at 20 sccm.
Claim 19
Dependent Claim
31 words
The process as set forth in claim 7 wherein the power utilized for generating said at least free radicals is 400 watts at 2450 MHz and 225 watts at 13.56 MHz.
References Cited (Backward Citations)
US3439238A
Cited
US3765763A
Cited
US4306292A
Cited
US4256534A
Cited
US4250428A
Cited
US4293249A
Cited
US4465898A
Cited
US4393095A
Cited
US4447469A
Cited
US4439243A
Cited
US4439244A
Cited
US4615905A
Cited
US4493977A
Cited
US4629635A
Cited
US4579609A
Cited
US4615756A
Cited
US4609103A
Cited
US4584207A
Cited
US4632057A
Cited
US4673456A
Cited
US4684542A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-08 | 2000-11-07 | 2001-05-09 | $7700.00 | Window Closed / Lapsed |