US5527718A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for removing impurities from polycide electrode and insulating film using heat
Assignee: Sony Corp
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Filing: 1994-12-28
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Granted: 1996-06-18
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Expires: 2014-12-28
Abstract
Abstract A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and contributing to the growth of the insulating film before the heat treatment for activating the electrode film. The step of drawing out the impurities is a step of preliminary heat treatment at a temperature at least the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film. The preliminary heat treatment is preferably performed at a temperature of 450° C. to 800° C., more preferably 450° C. to 700° C. The preliminary heat treatment may be performed after the formation of the electrode film or may be performed during the formation of the electrode film after each formation of one or more thin film layers for forming the electrode film.
Inventors
- 👤 Hisaharu Seita
- 👤 Kazuhiro Tajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:24
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/01346
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
99 words
A process for producing a semiconductor device comprising steps of: forming a polycide electrode film on an insulating film; drawing out impurities which are contained in at least one of the electrode film and insulating film which contribute to the growth of the insulating film during annealing at a temperature for activating the electrode film, said drawing out of said impurities comprising heat treating said electrode film and said insulating layer at a temperature between about 450° and about 800° C.; and annealing said electrode at a temperature of over about 800° C. film to activate said electrode film.
Claim 2
Dependent Claim
99 words
A process for producing a semiconductor device comprising steps of: forming a polycide electrode film on an insulating film; drawing out impurities which are contained in at least one of the electrode film and insulating film which contribute to the growth of the insulating film during annealing at a temperature for activating the electrode film, said drawing out of said impurities comprising heat treating said electrode film and said insulating layer at a temperature between about 450° and about 800° C.; and annealing said electrode at a temperature of over about 800° C. film to activate said electrode film.
Claim 3
Dependent Claim
23 words
The process for producing a semiconductor device as set forth in claim 1, wherein fluorine is drawn out as one of the impurities.
Claim 4
Dependent Claim
36 words
The process for producing a semiconductor device as set forth in claim 1, wherein the preliminary heat treatment is perforated in a gaseous atmosphere including any one from the group consisting of hydrogen, silane and polysilane.
Claim 5
Dependent Claim
28 words
The process for producing a semiconductor device as set forth in claim 1, wherein the preliminary heat treatment is performed at a pressure of atmospheric pressure to vacuum.
Claim 6
Dependent Claim
52 words
The process for producing a semiconductor device as set forth in claim 1, wherein the step of drawing out the impurities is a step of plasma treatment of the surface of the electrode film by using any one gas of the group consisting of the group consisting of hydrogen, silane and polysilane.
Claim 7
Dependent Claim
23 words
The process for producing a semiconductor device as set forth in claim 1, wherein fluorine is drawn out as one of the impurities.
Claim 8
Dependent Claim
100 words
A process for producing a semiconductor device comprising the steps of: forming a polycide electrode film on an insulating film; heat treating said polycide film and insulating film at a temperature no less than the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film, thereby to draw out impurities that would otherwise contribute to growth of the insulating film during an annealing step carried out at no less than said growth temperature of said insulating film; and annealing said electrode film at no less than said growth temperature of said insulating film.
Claim 9
Dependent Claim
100 words
A process for producing a semiconductor device comprising the steps of: forming a polycide electrode film on an insulating film; heat treating said polycide film and insulating film at a temperature no less than the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film, thereby to draw out impurities that would otherwise contribute to growth of the insulating film during an annealing step carried out at no less than said growth temperature of said insulating film; and annealing said electrode film at no less than said growth temperature of said insulating film.
Claim 10
Dependent Claim
36 words
The process for producing a semiconductor device as set forth in claim 7, wherein the preliminary heat treatment is performed in a gaseous atmosphere including any one from the group consisting of hydrogen, silane and polysilane.
Claim 11
Dependent Claim
28 words
The process for producing a semiconductor device as set forth in claim 8, wherein the preliminary heat treatment is performed at a pressure of atmospheric pressure to vacuum.
Claim 12
Dependent Claim
29 words
The process for producing a semiconductor device as set forth in claim 7, wherein the preliminary heat treatment is performed at a temperature of 450° C. to 800° C.
Claim 13
Dependent Claim
48 words
The process for producing a semiconductor device as set forth in 7, wherein the step of drawing out the impurities is a step of plasma treatment of the surface of the electrode film by using any one gas selected from the group consisting of hydrogen, silane, and polysilane.
Claim 14
Dependent Claim
48 words
The process for producing a semiconductor device as set forth in 7, wherein the step of drawing out the impurities is a step of plasma treatment of the surface of the electrode film by using any one gas selected from the group consisting of hydrogen, silane, and polysilane.
Claim 15
Dependent Claim
30 words
The process for producing a semiconductor device as set forth in claim 7, wherein the step of drawing out the impurities is performed after the formation of the electrode film.
Claim 16
Dependent Claim
53 words
The process for producing a semiconductor device as set forth in claim 7, wherein the electrode film comprises a plurality of thin film layers and the step of drawing out the impurities is performed during the formation of the electrode film after each formation of each thin film layer of the electrode film.
Claim 17
Dependent Claim
30 words
The process for producing a semiconductor device as set forth in claim 7, wherein the step of drawing out the impurities is performed after the formation of the electrode film.
Claim 18
Dependent Claim
53 words
The process for producing a semiconductor device as set forth in claim 7, wherein the electrode film comprises a plurality of thin film layers and the step of drawing out the impurities is performed during the formation of the electrode film after the formation of each thin film layer of the electrode film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |