US6033979A — Method of fabricating a semiconductor device with…

Claim 1

Independent Claim 102 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), where a concentration of fluorine in the amorphous carbon film varies in a depth-wise direction to enhance cohesion of the film with a substrate, by plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF 4 , C 2 F 6 , C 3 F 8 , and CHF 3 , and (b) at least one of N 2 , NO, NO 2 , NH 3 , and NF 3 .

Claim 2

Independent Claim 102 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), where a concentration of fluorine in the amorphous carbon film varies in a depth-wise direction to enhance cohesion of the film with a substrate, by plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF 4 , C 2 F 6 , C 3 F 8 , and CHF 3 , and (b) at least one of N 2 , NO, NO 2 , NH 3 , and NF 3 .

Claim 3

Dependent Claim 45 words

The method as recited in claim 1, wherein said mixture gas further including (c) at least one of H 2 , CH 4 , C 2 H 6 , C 2 H 4 , C 2 H 2 , and C 3 H 8 .

Claim 4

Dependent Claim 45 words

The method of fabricating a semiconductor device as recited in claim 1, wherein said interlayer insulative layer composed of amorphous carbon film including fluorine (F) is formed to have a content of said fluorine that decreases in said depth-wise direction of said amorphous carbon film.

Claim 5

Dependent Claim 49 words

The method as recited in claim 3, further comprising the step of forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 6

Dependent Claim 42 words

The method of fabricating a semiconductor device as recited in claim 4, further comprise the steps of: providing a semiconductor substrate; and forming a transistor on said semiconductor substrate over which said interlayer insulative layer of an amorphous carbon film is formed.

Claim 7

Independent Claim 100 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), where a concentration of fluorine in the amorphous carbon film varies in a depth-wise direction to enhance cohesion of the film with a substrate, by plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF 4 , C 2 F 6 , C 3 F 8 , and CHF 3 , and (b) at least one of SiH 4 , Si 2 H 6 , and SiF 4 .

Claim 8

Independent Claim 100 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), where a concentration of fluorine in the amorphous carbon film varies in a depth-wise direction to enhance cohesion of the film with a substrate, by plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF 4 , C 2 F 6 , C 3 F 8 , and CHF 3 , and (b) at least one of SiH 4 , Si 2 H 6 , and SiF 4 .

Claim 9

Dependent Claim 45 words

The method as recited in claim 6, wherein said mixture gas further including (c) at least one of H 2 , CH 4 , C 2 H 6 , C 2 H 4 , C 2 H 2 , and C 3 H 8 .

Claim 10

Dependent Claim 45 words

The method of fabricating a semiconductor device as recited in claim 6, wherein said interlayer insulative layer composed of amorphous carbon film including fluorine (F) is formed to have a content of said fluorine that decreases in said depth-wise direction of said amorphous carbon film.

Claim 11

Dependent Claim 49 words

The method as recited in claim 8, further comprising the step of forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 12

Dependent Claim 42 words

The method of fabricating a semiconductor device as recited in claim 9, further comprising the steps of: providing a semiconductor substrate; and forming a transistor on said semiconductor substrate over which said interlayer insulative layer of an amorphous carbon film is formed.

Claim 13

Independent Claim 75 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F) having a content that decreases in a depth-wise direction of said amorphous carbon film, formed by carrying out plasma-enhanced chemical vapor deposition (PCVD) using CxFy gas, wherein x is an integer ranging from 1 to 4 both inclusive and y is an integer ranging from 4 to 8 both inclusive.

Claim 14

Independent Claim 75 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F) having a content that decreases in a depth-wise direction of said amorphous carbon film, formed by carrying out plasma-enhanced chemical vapor deposition (PCVD) using CxFy gas, wherein x is an integer ranging from 1 to 4 both inclusive and y is an integer ranging from 4 to 8 both inclusive.

Claim 15

Dependent Claim 15 words

The method as recited in claim 11, wherein said plasma is generated by microwave discharge.

Claim 16

Dependent Claim 16 words

The method as recited in claim 11, wherein said plasma is generated by helicon wave discharge.

Claim 17

Dependent Claim 54 words

The method of fabricating a semiconductor device as recited in claim 11, further comprising the step of forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 18

Dependent Claim 42 words

The method of fabricating a semiconductor device as recited in claim 14, further comprising the steps of: providing a semiconductor substrate; and forming a transistor on said semiconductor substrate over which said interlayer insulative layer of an amorphous carbon film is formed.

Claim 19

Dependent Claim 35 words

The method of fabricating a semiconductor device as recited in claim 15, wherein said semiconductor substrate on which said amorphous carbon film to be deposited is disposed outside an area in which plasma is generated.

Claim 20

Independent Claim 91 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F) having a content that decreases in a depth-wise direction of said amorphous carbon film, formed by carrying out plasma-enhanced chemical vapor deposition (PCVD) using CxFy gas, wherein x is an integer ranting from 1 to 4 both inclusive, and y is an integer ranting from 4 to 8 both inclusive, and providing a frequency of electric power with said substrate while PCVD is being carried out.

Claim 21

Independent Claim 91 words

A method of fabricating a semiconductor device, comprising the step of forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F) having a content that decreases in a depth-wise direction of said amorphous carbon film, formed by carrying out plasma-enhanced chemical vapor deposition (PCVD) using CxFy gas, wherein x is an integer ranting from 1 to 4 both inclusive, and y is an integer ranting from 4 to 8 both inclusive, and providing a frequency of electric power with said substrate while PCVD is being carried out.

Claim 22

Dependent Claim 15 words

The method as recited in claim 17, wherein said plasma is generated by microwave discharge.

Claim 23

Dependent Claim 16 words

The method as recited in claim 17, wherein said plasma is generated by helicon wave discharge.

Claim 24

Dependent Claim 54 words

The method of fabricating a semiconductor device as recited in claim 17, further comprising the step of forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 25

Dependent Claim 42 words

The method of fabricating a semiconductor device as recited in claim 20, further comprising the steps of: providing a semiconductor substrate; and forming a transistor on said semiconductor substrate over which said interlayer insulative layer of an amorphous carbon film is formed.

Claim 26

Dependent Claim 36 words

The method of fabricating a semiconductor device as recited in claim 21, wherein said semiconductor substrate on which said amorphous carbon film is to be deposited is disposed outside an area in which plasma is generated.

Claim 27

Independent Claim 41 words

A method of fabricating a semiconductor device, comprising the steps of: forming an interlayer insulative layer composed of amorphous carbon film including fluorine (F) so that a content of said fluorine decreases in a depth-wise direction of said amorphous carbon film.

Claim 28

Independent Claim 41 words

A method of fabricating a semiconductor device, comprising the steps of: forming an interlayer insulative layer composed of amorphous carbon film including fluorine (F) so that a content of said fluorine decreases in a depth-wise direction of said amorphous carbon film.

Claim 29

Dependent Claim 54 words

The method of fabricating a semiconductor device as recited in claim 23, further comprising the step of forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 30

Dependent Claim 21 words

The method of fabricating a semiconductor device as recited in claim 23, wherein said interlayer insulative layers further includes nitrogen (N).

Claim 31

Dependent Claim 21 words

The method of fabricating a semiconductor device as recited in claim 23, wherein said interlayer insulative layer further includes silicon (Si).

Claim 32

Independent Claim 96 words

A method of fabricating a semiconductor device, comprising the steps of: forming an interlayer insulative layer composed of amorphous carbon film; forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film; and forming a transition layer interposed between said amorphous carbon film and said buffer layer, said transition layer having a composition gradually varying from a composition of said amorphous carbon film to a composition of said buffer layer.

Claim 33

Independent Claim 96 words

A method of fabricating a semiconductor device, comprising the steps of: forming an interlayer insulative layer composed of amorphous carbon film; forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film; and forming a transition layer interposed between said amorphous carbon film and said buffer layer, said transition layer having a composition gradually varying from a composition of said amorphous carbon film to a composition of said buffer layer.

Claim 34

Dependent Claim 20 words

The method of fabricating a semiconductor device as recited in claim 27, wherein said interlayer insulating layer includes fluorine (F).

Claim 35

Dependent Claim 26 words

The method of fabricating a semiconductor device as recited in claim 28, wherein said fluorine (F) decreases in a depth-wise direction of said interlayer insulating layer.

Claim 36

Dependent Claim 38 words

The method of fabricating a semiconductor device as recited in claim 29, wherein none of said fluorine (F) is present at an interface between said interlayer insulating layer and an underlying layer disposed below said interlayer insulating layer.

Claim 37

Dependent Claim 20 words

The method of fabricating a semiconductor device as recited in claim 30, wherein said underlying layer is a semiconductor substrate.

Claim 38

Independent Claim 87 words

A method of fabricating a semiconductor device, comprising the step of: forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), where a concentration of fluorine in the amorphous carbon film varies in a depth-wise direction to enhance cohesion of the film with a substrate; and forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 39

Independent Claim 87 words

A method of fabricating a semiconductor device, comprising the step of: forming an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), where a concentration of fluorine in the amorphous carbon film varies in a depth-wise direction to enhance cohesion of the film with a substrate; and forming a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer being disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.

Claim 40

Dependent Claim 30 words

The method of fabricating a semiconductor device recited in claim 32, further comprising the step of forming a transition layer interposed between said amorphous carbon film and said buffer layer.

Claim 41

Dependent Claim 24 words

The method of fabricating a semiconductor device recited in claim 33, wherein said interlayer insulating layer of an amorphous carbon film includes fluorine (F).

Claim 42

Dependent Claim 26 words

The method of fabricating a semiconductor device as recited in claim 34, wherein said fluorine (F) decreases in said depth-wise direction of said interlayer insulating layer.

Claim 43

Dependent Claim 38 words

The method of fabricating a semiconductor device as recited in claim 35, wherein none of said fluorine (F) is present at an interface between said interlayer insulating layer and an underlying layer disposed below said interlayer insulating layer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2003-03-07	2003-09-06	2004-03-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2007-03-07	2007-09-06	2008-03-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2011-03-07	2011-09-06	2012-03-07	$7700.00	Window Closed / Lapsed

Method of fabricating a semiconductor device with amorphous carbon layer

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