US5147822A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing method for improving a package of a semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-02-25
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Granted: 1992-09-15
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Expires: 2011-02-25
Abstract
Abstract An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Mitsunori Tsuchiya
- 👤 Kazuo Urata
- 👤 Itaru Koyama
- 👤 Shinji Imatou
- 👤 Shigenori Hayashi
- 👤 Naoki Hirose
- 👤 Mari Sasaki
- 👤 Noriya Ishida
- 👤 Kouhei Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:41
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/458; H10W74/00; H10W74/01; H10W74/10; H10W74/111; H10W74/121; H10W74/40; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
103 words
In a process of manufacturing an electronic device which includes a semiconductor chip packaged within an organic resin, the improvement comprising the steps of: placing said electronic device in a vacuum chamber, evacuating said vacuum chamber by using a vacuum pump, introducing a gas selected from the group consisting of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen to said vacuum chamber, inputting energy to said vacuum chamber in order to generate a plasma from said gas; and then carrying out a plasma processing in the vacuum chamber on said electronic device including said organic resin by virtue of said plasma.
Claim 2
Dependent Claim
103 words
In a process of manufacturing an electronic device which includes a semiconductor chip packaged within an organic resin, the improvement comprising the steps of: placing said electronic device in a vacuum chamber, evacuating said vacuum chamber by using a vacuum pump, introducing a gas selected from the group consisting of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen to said vacuum chamber, inputting energy to said vacuum chamber in order to generate a plasma from said gas; and then carrying out a plasma processing in the vacuum chamber on said electronic device including said organic resin by virtue of said plasma.
Claim 3
Dependent Claim
23 words
The method of claim 1, comprising the additional step of forming a diamond-like carbon on the package by plasma CVD in the chamber.
Claim 4
Dependent Claim
24 words
The method of claim 1, comprising the additional step of forming a silicon nitride film on the package by plasma CVD in the chamber.
Claim 5
Independent Claim
81 words
A method of manufacturing an electronic device comprising an electronic part and an organic resin molding formed to cover the electronic part, comprising the steps of: forming an organic resin molding on the electronic part to form a package; and then treating a surface of the resin with a plasma of a gas selected from the group consisting of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen and then forming a protective layer on the surface of the package.
Claim 6
Independent Claim
81 words
A method of manufacturing an electronic device comprising an electronic part and an organic resin molding formed to cover the electronic part, comprising the steps of: forming an organic resin molding on the electronic part to form a package; and then treating a surface of the resin with a plasma of a gas selected from the group consisting of argon, neon, helium, krypton, nitrogen fluorides, carbon fluorides and nitrogen and then forming a protective layer on the surface of the package.
Claim 7
Dependent Claim
19 words
The method of claim 4 wherein the step of forming a protective layer is performed at about room temperature.
Claim 8
Dependent Claim
28 words
The method of claim 4, wherein the step of forming a protective layer includes using a carbide gas such that the film is made from a carbonaceous material.
Claim 9
Dependent Claim
26 words
The method of claim 4, wherein the step of forming a protective layer comprises forming a diamond-like carbon film on the surface after the plasma treatment.
Claim 10
Dependent Claim
26 words
The method of claim 4, wherein the step of forming a protective layer comprises forming a silicon nitride film on the surface after the plasma treatment.
Claim 11
Dependent Claim
14 words
The method of claim 4, wherein said electronic part is a semiconductor integrated circuit.
Claim 12
Dependent Claim
15 words
The method of claim 4, wherein said protective layer is 0.5 to 5 μm thick.
Claim 13
Dependent Claim
35 words
The method of claim 4, wherein said resin surface is treated with said plasma to create a densified, pore-free outer layer of resin over the outer surface of said resin molding which is moisture impermeable.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |