US4972250A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Protective coating useful as passivation layer for semiconductor devices
Assignee: Microwave Technology Inc
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Filing: 1987-03-02
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Granted: 1990-11-20
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Expires: 2007-03-02
Abstract
Abstract A protective coating useful as a passivation layer for semiconductor devices incorporates a thin film of an amorphous diamond-like carbon. In one implementation, a thin film of amorphous silicon is deposited over the carbon material. The semiconductive passivation coating eliminates electrical shorts, dissipates charge build-up and protects against chemical contamination.
Inventors
- 👤 Masahiro Omori
- 👤 Edward B. Stoneham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:41
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/481; H10W74/10; H10W74/131; H10W74/137; H10W74/147
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
56 words
Structure comprising: a support on which a number of electrically conductive elements are formed; passivation material covering portions of said support and said conductive elements wherein said passivation material comprises sputtered carbon; and a layer of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond formed by plasma enhanced chemical vapor deposition over said sputtered carbon.
Claim 2
Dependent Claim
56 words
Structure comprising: a support on which a number of electrically conductive elements are formed; passivation material covering portions of said support and said conductive elements wherein said passivation material comprises sputtered carbon; and a layer of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond formed by plasma enhanced chemical vapor deposition over said sputtered carbon.
Claim 3
Dependent Claim
18 words
Structure as in claim 1, further including a silicon thin film deposited over said diamond or diamond-like carbon.
Claim 4
Dependent Claim
18 words
Structure as in claim 2, wherein the thickness of said silicon is in the range of about 200-300Å.
Claim 5
Dependent Claim
22 words
Structure as in claim 1, wherein the thickness of said passivation material and said layer is in the range of about 100-2000Å.
Claim 6
Dependent Claim
18 words
Structure is in claim 1, wherein said passivation material is formed from a carbon material by sputter deposition.
Claim 7
Dependent Claim
21 words
Structure as in claim 1, wherein said support comprises a semiconductive material that acts as a substrate for a semiconductor device.
Claim 8
Dependent Claim
25 words
Structure as in claim 6, including metallization layers formed above a surface of said substrate to provide electrical connections between regions formed in said substrate.
Claim 9
Dependent Claim
43 words
Structure as in claim 7, including an air bridge comprising a metal connection that is connected to a metal conductor formed with said semiconductor device, such that said metal connection overlies but does not contact another metal conductor formed with said semiconductor device.
Claim 10
Dependent Claim
55 words
An assembly comprising: a semiconductor substrate; a metallization layer comprising electrically conductive elements; passivation material comprising sputtered carbon covering portions of the surface of said substrate and said conductive elements; and a layer of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond formed by plasma enhanced chemical vapor deposition disposed over said sputtered carbon.
Claim 11
Dependent Claim
55 words
An assembly comprising: a semiconductor substrate; a metallization layer comprising electrically conductive elements; passivation material comprising sputtered carbon covering portions of the surface of said substrate and said conductive elements; and a layer of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond formed by plasma enhanced chemical vapor deposition disposed over said sputtered carbon.
Claim 12
Dependent Claim
21 words
An assembly as in claim 9, further including a silicon thin film deposited over said layer of diamond or diamond-like carbon.
Claim 13
Dependent Claim
66 words
An assembly comprising: a semiconductor substrate; a metallization layer comprising electrically conductive elements; a conductive air bridge connected to selected ones of said conductive elements and bridging over a conductive element between said selected connected elements; and passivation material disposed between said air bridge and said bridged over conductive element, said material consisting essentially of one of amorphous carbon, diamond-like carbon, polycrystalline diamond and monocrystalline diamond.
Claim 14
Dependent Claim
66 words
An assembly comprising: a semiconductor substrate; a metallization layer comprising electrically conductive elements; a conductive air bridge connected to selected ones of said conductive elements and bridging over a conductive element between said selected connected elements; and passivation material disposed between said air bridge and said bridged over conductive element, said material consisting essentially of one of amorphous carbon, diamond-like carbon, polycrystalline diamond and monocrystalline diamond.
Claim 15
Dependent Claim
47 words
Structure comprising: a support having a number of electrically conductive elements; passivation material covering portions of said support and said conductive elements wherein said passivation material comprises sputtered carbon; and a layer of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond formed over said sputtered carbon.
Claim 16
Dependent Claim
47 words
Structure comprising: a support having a number of electrically conductive elements; passivation material covering portions of said support and said conductive elements wherein said passivation material comprises sputtered carbon; and a layer of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond formed over said sputtered carbon.
Claim 17
Dependent Claim
57 words
A semiconductor device comprising: a substrate formed from a semiconductor material consisting essentially of gallium arsenide, said substrate having a number of electrically conductive elements; and passivation material disposed over at least portions of said substrate and said conductive elements, said passivation material consisting essentially of one of amorphous carbon, diamond-like carbon, polycrystalline diamond and monocrystalline diamond.
Claim 18
Dependent Claim
57 words
A semiconductor device comprising: a substrate formed from a semiconductor material consisting essentially of gallium arsenide, said substrate having a number of electrically conductive elements; and passivation material disposed over at least portions of said substrate and said conductive elements, said passivation material consisting essentially of one of amorphous carbon, diamond-like carbon, polycrystalline diamond and monocrystalline diamond.
Claim 19
Dependent Claim
17 words
A semiconductor device as in claim 13 wherein said passivation material is formed as a single layer.
Claim 20
Dependent Claim
60 words
A semiconductor device comprising: a substrate formed from a semiconductor compound consisting essentially of materials selected from Group III-V and Group II-VI, said substrate having electrically conductive elements; and passivation material disposed over at least portions of said substrate and said conductive elements, said passivation material consisting essentially of one of amorphous carbon, diamond-like carbon, polycrystalline diamond and monocrystalline diamond.
Claim 21
Dependent Claim
60 words
A semiconductor device comprising: a substrate formed from a semiconductor compound consisting essentially of materials selected from Group III-V and Group II-VI, said substrate having electrically conductive elements; and passivation material disposed over at least portions of said substrate and said conductive elements, said passivation material consisting essentially of one of amorphous carbon, diamond-like carbon, polycrystalline diamond and monocrystalline diamond.
Claim 22
Dependent Claim
89 words
An assembly comprising: a semiconductor substrate having a surface; an insulation layer formed on at least part of said surface of said substrate; electrically conductive elements formed on at least one of (i) said insulation layer and (ii) a portion of an exposed surface of said substrate; passivation material consisting essentially of sputtered carbon covering portions of said surface of said substrate and said conductive element; and a layer of diamond-like carbon, polycrystalline diamond or monocrystalline diamond formed by plasma enhanced chemical vapor deposition disposed over said sputtered carbon.
Claim 23
Dependent Claim
89 words
An assembly comprising: a semiconductor substrate having a surface; an insulation layer formed on at least part of said surface of said substrate; electrically conductive elements formed on at least one of (i) said insulation layer and (ii) a portion of an exposed surface of said substrate; passivation material consisting essentially of sputtered carbon covering portions of said surface of said substrate and said conductive element; and a layer of diamond-like carbon, polycrystalline diamond or monocrystalline diamond formed by plasma enhanced chemical vapor deposition disposed over said sputtered carbon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-19 | 1994-05-21 | 1994-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-19 | 1998-05-21 | 1998-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-19 | 2002-05-21 | 2002-11-20 | $7700.00 | Window Closed / Lapsed |