Production of diamond thin film

Abstract

Abstract PURPOSE:To obtain a thin diamond film having C-C bond in the primary structure protected with H2 on a substrate by executing sputtering by impressing DC voltage in an H2 atmosphere adjusted to a specified low H2 pressure in a sputtering device provided with a graphite target. CONSTITUTION:A graphite disc target 2 is disposed in a vacuum chamber 1 of a sputtering device with a specified distance to a counter electrode. Further, a substrate 3 prepd. from Si, glass, Al, TiO2, etc. is attached to the counter electrode. After evacuating the vacuum chamber 1 to 1X10<-7>Torr previously, H2 having 99.999% purity is introduced 4 into the vacuum chamber and the vacuum is held at 10<-3>-10<-4>Torr. Then, DC voltage of 1kV at the anode is impressed by an electric power source 6, and sputtering is executed while controlling the substrate temp. to <=100 deg.C. Thus, a transparent film having wide breadth and light transmittivity with a wavelength at the absorption end of 225nm is obtd. on the substrate. The transparent film is found by the investigation with an infrared absorption spectrum to be a carbon film contg. <=3C alkyl group, and that the film is a thin film having a diamond structure by the X-ray diffraction analysis and electron beam diffraction analysis.

Inventors

• 👤 Akio Hiraki
• 👤 昭夫 平木
• 👤 Tatsuro Miyasato
• 👤 達郎 宮里

Bibliographic Details