US4028149A
Expired / Lapsed
US
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Process for forming monocrystalline silicon carbide on silicon substrates
Assignee: International Business Machines Corp
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Filing: 1976-06-30
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Granted: 1977-06-07
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Expires: 1996-06-30
Abstract
Abstract A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050° C to 1250° C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.
Inventors
- 👤 John L. Deines
- 👤 San-Mei Ku
- 👤 Michael R. Poponiak
- 👤 Paul J. Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:26
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D62/00; H10D62/80; H10D62/82; H10D62/83; H10D62/832; H10D62/8325; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/117; Y10S148/148; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
107 words
A method for forming a monocrystalline silicon carbide on a monocrystalline silicon substrate comprising converting a portion of a monocrystalline silicon substrate into a porous silicon substance by an anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050° C to 1250° C in an atmosphere that includes a hydrocarbon gas selected from the group consisting of methane, ethane, ethylene, propane, propylene and mixtures thereof for a time sufficient to react the porous silicon and the gas thereby forming a lower layer of monocrystalline silicon carbide and an overlying layer of polycrystalline silicon carbide.
Claim 2
Independent Claim
107 words
A method for forming a monocrystalline silicon carbide on a monocrystalline silicon substrate comprising converting a portion of a monocrystalline silicon substrate into a porous silicon substance by an anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050° C to 1250° C in an atmosphere that includes a hydrocarbon gas selected from the group consisting of methane, ethane, ethylene, propane, propylene and mixtures thereof for a time sufficient to react the porous silicon and the gas thereby forming a lower layer of monocrystalline silicon carbide and an overlying layer of polycrystalline silicon carbide.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the porous silicon substance has a porosity in the range of 40 to 60 percent.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein the resultant porous silicon substance is a surface layer of a thickness in the range of 0.1 to 10 microns.
Claim 5
Dependent Claim
23 words
The method of claim 2 wherein said silicon substrate is comprised of an N-type epitaxial silicon layer supported on a P-type silicon wafer.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein P-type regions are formed in the substrate which extend through the N-type epitaxial layer.
Claim 7
Dependent Claim
21 words
The method of claim 4 wherein P-type regions are formed in the substrate which extend partially through the N-type epitaxial layer.
Claim 8
Dependent Claim
42 words
The method of claim 5 wherein said P-type regions are annular in shape, and the resultant silicon carbide regions in combination with the PN junction formed at the interface of the epitaxial layer and wafer provide electrical isolation for the surrounded regions.
Claim 9
Dependent Claim
18 words
The method of claim 6 wherein the polycrystalline silicon carbide is removed leaving exposed the monocrystalline silicon carbide.
Claim 10
Dependent Claim
16 words
The method of claim 2 wherein a vaporized impurity for semiconductors is included in the atmosphere.
Claim 11
Dependent Claim
12 words
The method of claim 2 wherein said atmosphere includes a carrier gas.
Claim 12
Dependent Claim
22 words
The method of claim 1 wherein said overlying layer of polycrystalline silicon carbide is removed leaving the underlying monocrystalline silicon carbide exposed.
Claim 13
Dependent Claim
16 words
The method of claim 11 wherein the polycrystalline silicon carbide is removed by sputter etching techniques.
References Cited (Backward Citations)
US3386866A
Cited
US3397448A
Cited
US3389022A
Cited
US3400309A
Cited
GB1162565A
Cited
US3640806A
Cited
US3690969A
Cited
US3919060A
Cited
US3929529A
Cited
US3954523A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-06 | 1980-12-06 | 1981-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-06 | 1984-12-06 | 1985-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-06 | 1988-12-06 | 1989-06-07 | $7700.00 | Window Closed / Lapsed |