US3386866A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of epitaxially growing a layer of silicon carbide on a seed by pyrolytic decomposition of hydrocarbons or mixtures of silanes and hydrocarbons
Assignee: International Business Machines Corp
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Filing: 1965-11-29
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Granted: 1968-06-04
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Expires: 1985-11-29
Abstract
No abstract record available.
Inventors
- 👤 Ebert Ekkehard
- 👤 Spielmann Werner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:38
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/10; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C01B32/963; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
66 words
METHOD OF GROWING IN A REACTION CHAMBER A MONOCRYSTALLINE LAYER OF SILICON CARBIDE ON A MONOCRYSTALLINE SEED HAVING SILICON AS A CONSTITUENT THEREIN COMPRISING THE STEPS OF: MAINTAINING A VACUUM IN SAID REACTION CHAMBER; APPLYING AN INPUT GAS STREAM COMPRISING SIH4 AND C3H8 TO SAID EVACUATED CHAMBER; AND DECOMPOSING PYROLYTICALLY SAID GAS STREAM IN SAID CHAMBER TO EFFECT SAID GROWING OF SAID LAYER ON SAID SEED.
Claim 2
Dependent Claim
66 words
METHOD OF GROWING IN A REACTION CHAMBER A MONOCRYSTALLINE LAYER OF SILICON CARBIDE ON A MONOCRYSTALLINE SEED HAVING SILICON AS A CONSTITUENT THEREIN COMPRISING THE STEPS OF: MAINTAINING A VACUUM IN SAID REACTION CHAMBER; APPLYING AN INPUT GAS STREAM COMPRISING SIH4 AND C3H8 TO SAID EVACUATED CHAMBER; AND DECOMPOSING PYROLYTICALLY SAID GAS STREAM IN SAID CHAMBER TO EFFECT SAID GROWING OF SAID LAYER ON SAID SEED.
Claim 3
Dependent Claim
84 words
METHOD OF GROWING IN A REACTION CHAMBER A MONOCRYSTALLINE LAYER OF SILICON CARBIDE ON A MONOCRYSTALLINE SEED OF SILICON COMPRISING THE STEPS OF; MAINTAINING A VACUUM IN SAID REACTION CHAMBER DURING SAID GROWING OF SAID LAYER; APPLYING AN INPUT GAS STREAM CONSISTING ESSENTIALLY OF HYDROCARBONS TO SAID EVACUATED CHAMBER; AND DECOMPOSING PYROLYTICALLY SAID HYDROCARBONS IN THE IMMEDIATE VICINITY OF THE SURFACE OF THE SILICON SEED, SUCH THAT RESULTING CARBON ATOMS COMBINE WITH SILICON ATOMS OF THE SEED TO FORM A MONOCRYSTALLINE SILICON CARBIDE LAYER.
Claim 4
Dependent Claim
84 words
METHOD OF GROWING IN A REACTION CHAMBER A MONOCRYSTALLINE LAYER OF SILICON CARBIDE ON A MONOCRYSTALLINE SEED OF SILICON COMPRISING THE STEPS OF; MAINTAINING A VACUUM IN SAID REACTION CHAMBER DURING SAID GROWING OF SAID LAYER; APPLYING AN INPUT GAS STREAM CONSISTING ESSENTIALLY OF HYDROCARBONS TO SAID EVACUATED CHAMBER; AND DECOMPOSING PYROLYTICALLY SAID HYDROCARBONS IN THE IMMEDIATE VICINITY OF THE SURFACE OF THE SILICON SEED, SUCH THAT RESULTING CARBON ATOMS COMBINE WITH SILICON ATOMS OF THE SEED TO FORM A MONOCRYSTALLINE SILICON CARBIDE LAYER.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-06-04 | 1971-12-04 | 1972-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-06-04 | 1975-12-04 | 1976-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-06-04 | 1979-12-04 | 1980-06-04 | $7700.00 | Window Closed / Lapsed |