US3228756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing single crystal silicon carbide
Assignee: Transitron Electronic Corp
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Filing: 1960-05-20
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Granted: 1966-01-11
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Expires: 1980-05-20
Abstract
No abstract record available.
Inventors
- 👤 Karl M Hergenrother
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:05
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S148/00; Y10S148/062; Y10S148/148
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
136 words
A METHOD OF GROWING AN EPITAXIAL SINGLE CRYSTAL SILICON CARBIDE LAYER ONTO A SILICON CARBIDE SEED COMPRISING SPACING SAID SEED AND A CHARGE OF SILICON CARBIDE, HEATING SAID SEED AND CHARGE TO A TEMPERATURE OF AT LEAST SUBSTANTIALLY 2000*C. WITH THE TEMPERATURE OF THE CHARGE IN EXCESS BY AT LEAST SUBSTANTIALLY 50*C. OF THE TEMPERATURE OF THE SEED WHILE MAINTAINING THE CONCENTRATION OF SILI CON CARBIDE VAPORS IN THE ENVIRONMENT OF SAID SEED BELOW SUPERSATURATION UNTIL SAID TEMPERATURES ARE REACHED, BY HEATING THE SEED QUICKLY THROUGH THE CRITICAL RANGE OF SUBSTANTIALLY 1800*C. TO 2000*C. TO AVOID MEASURABLE VAPORIZATION OF THE SEED AND AFTER SAID TEMPERATURES ARE REACHED, RAISING THE CONCENTRATION OF SILICON CARBIDE VAPORS PRODUCED BY SAID CHARGE IN THE VICINITY OF SAID SEED TO ABOVE SUPERSATURATION TO FORM AN EPITAXIAL SINGLE CRYSTAL SILICON CARBIDE LAYER.
Claim 2
Independent Claim
136 words
A METHOD OF GROWING AN EPITAXIAL SINGLE CRYSTAL SILICON CARBIDE LAYER ONTO A SILICON CARBIDE SEED COMPRISING SPACING SAID SEED AND A CHARGE OF SILICON CARBIDE, HEATING SAID SEED AND CHARGE TO A TEMPERATURE OF AT LEAST SUBSTANTIALLY 2000*C. WITH THE TEMPERATURE OF THE CHARGE IN EXCESS BY AT LEAST SUBSTANTIALLY 50*C. OF THE TEMPERATURE OF THE SEED WHILE MAINTAINING THE CONCENTRATION OF SILI CON CARBIDE VAPORS IN THE ENVIRONMENT OF SAID SEED BELOW SUPERSATURATION UNTIL SAID TEMPERATURES ARE REACHED, BY HEATING THE SEED QUICKLY THROUGH THE CRITICAL RANGE OF SUBSTANTIALLY 1800*C. TO 2000*C. TO AVOID MEASURABLE VAPORIZATION OF THE SEED AND AFTER SAID TEMPERATURES ARE REACHED, RAISING THE CONCENTRATION OF SILICON CARBIDE VAPORS PRODUCED BY SAID CHARGE IN THE VICINITY OF SAID SEED TO ABOVE SUPERSATURATION TO FORM AN EPITAXIAL SINGLE CRYSTAL SILICON CARBIDE LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-01-10 | 1969-07-12 | 1970-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-01-10 | 1973-07-12 | 1974-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-01-10 | 1977-07-12 | 1978-01-11 | $7700.00 | Window Closed / Lapsed |