Growth of crystals

Claim 1

A METHOD OF GROWING A SINGLE CRYSTAL OF UNIFORM LATTICE STRUCTURE THROUGHOUT AND OF A PRESCRIBED COMPOSITION SELECTED FROM THE GROUP OF CADMIUM SULFIDE AND ZINC SULFIDE BY FOLLOWING THE STEPS OF IMPARTING ONE ZONE OF HEAT TO THE COMPOSITION TO CONVERT IT TO THE GASEOUS STATE, CONDUCTING THE GASEOUS COMPOSITION TO AN ORIFICE, DISCHARGING THE GASEOUS COMPOSITION TOWARD A SURFACE IN A HYDROGEN SULFIDE ATMOSPHERE AT A SECOND ZONE OF HEAT AT A TEMPERARATURE SLIGHTLY BELOW THE COMPOSITION SUBLIMATION OF THE ATOMS OF THE COMPOSITION TEMPERATURE OF 1000*C. FOR CADMIUM SULFIDE AND CONTROLLING THE ORIENTATION OF THE ATOMS OF THE COMPOSITION IN A SINGLE CRYSTAL OF UNIFORM LATTICE STRUCTURE THROUGHOUT, MOVING THE SURFACE AWAY FROM THE ORIFICE AS THE CRYSTAL INCREASES IN THICKNESS WITHOUT CHANGE IN THE UNIFORMITY OF THE CRYSTAL LATTICE STRUCTURE BEING FORMED, AN MAINTAINING THE CRYSTAL GROWTH CONDITIONS CONTINUOUSLY FOR A PRESCRIBED PERIOD OF TIME AND SIZE OF CRYSTAL GROWTH.