US4436766A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plated bridge step-over connection for monolithic devices and method for making thereof
Assignee: United States Department of the Navy
•
Filing: 1981-05-15
•
Granted: 1984-03-13
•
Expires: 2001-05-15
Abstract
Abstract A step-over connection in a monolithic device including laterally spaced alizations having upper surfaces at one or more levels above a supporting substrate and a dielectric layer over one of the metalizations. The connection is in the form of a metal bridge spanning the space between the metalizations, and is formed by successive steps of providing a first resist layer, forming openings therein, etching away an area of dielectric layer, gold plating pillars on the exposed metalization surfaces, sputtering a gold film on the first resist layer and exposed pillars, providing a second resist layer with a pillar connecting bridge pattern opening, gold plating the bridge connection on the exposed sputtered gold film, and removing the resist layers and excess gold film.
Inventors
- 👤 Ralph E. Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:10
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/46; H05K3/4685; H10; H10D; H10D84/00; H10D84/01; H10D86/00; H10D86/01; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/40; H10W20/41; H10W20/43; H10W20/432; H10W70/00; H10W70/60; H10W70/62; H10W70/65
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
231 words
A method of forming a step-over connection in a monolithic device having a substrate, a plurality of laterally spaced metalizations supported by said substrate, and a dielectric layer over at least one of said metalizations, comprising the steps of: providing a first resist layer having a finite thickness over said metalizations and said dielectric layer; forming first and second openings in said first resist layer layer exposing at least one selected surface area of said dielectric layer and a selected first area of said metalizations; etching said dielectric layer in said selected surface area thereof to expose a selected second area of said metalizations; plating metal onto said first and second areas of said metalizations to form first and second pillars having a height about equal to said thickness of said first resist layer; forming a thin sputtered metal layer over said first resist layer and said pillars; providing a second resist layer over said sputtered metal layer; forming a connector bridge pattern opening in said second resist layer, said connector bridge pattern opening exposing said first and second pillars and a connecting area of said sputtered metal layer therebetween; plating metal onto said pillars and exposed sputtered metal layer to form a metal bridge connector spanning the space between said metalizations; and removing said first and second resist layers and said sputtered metal layer external to said bridge pattern opening.
Claim 2
Independent Claim
231 words
A method of forming a step-over connection in a monolithic device having a substrate, a plurality of laterally spaced metalizations supported by said substrate, and a dielectric layer over at least one of said metalizations, comprising the steps of: providing a first resist layer having a finite thickness over said metalizations and said dielectric layer; forming first and second openings in said first resist layer layer exposing at least one selected surface area of said dielectric layer and a selected first area of said metalizations; etching said dielectric layer in said selected surface area thereof to expose a selected second area of said metalizations; plating metal onto said first and second areas of said metalizations to form first and second pillars having a height about equal to said thickness of said first resist layer; forming a thin sputtered metal layer over said first resist layer and said pillars; providing a second resist layer over said sputtered metal layer; forming a connector bridge pattern opening in said second resist layer, said connector bridge pattern opening exposing said first and second pillars and a connecting area of said sputtered metal layer therebetween; plating metal onto said pillars and exposed sputtered metal layer to form a metal bridge connector spanning the space between said metalizations; and removing said first and second resist layers and said sputtered metal layer external to said bridge pattern opening.
Claim 3
Dependent Claim
22 words
The method defined in claim 1, and wherein: said plating metal and said sputtered metal layer forming steps are performed with gold.
Claim 4
Dependent Claim
14 words
The method defined in claim 2, and wherein: said dielectric layer comprises silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-13 | 1987-09-12 | 1988-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-13 | 1991-09-12 | 1992-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-13 | 1995-09-12 | 1996-03-13 | $7700.00 | Window Closed / Lapsed |