US4722913A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Doped semiconductor vias to contacts
Assignee: STMicroelectronics lnc USA
•
Filing: 1986-10-17
•
Granted: 1988-02-02
•
Expires: 2006-10-17
Abstract
Abstract In the manufacture of integrated circuits, an undoped wide band-gap semiconductor is used for the insulating layer to isolate the silicon substrate from the metal interconnection pattern. To provide conductive vias through the insulating layer for connection to the source and drain of the transistors of the circuit, the wide band-gap semiconductor is implanted with a dopant selectively in the portion overlying the source and drain for making the implanted portion of low resistivity and of the conductivity type of the source and drain. Preferably, carbon is the wide band-gap semiconductor and nitrogen is the dopant implanted.
Inventors
- 👤 Robert O. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/6902; H10P30/00; H10P30/40; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/074; H10W20/077; Y; Y10; Y10S; Y10S438/00; Y10S438/934
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
86 words
In a process of manufacturing an integrated circuit in which a low resistance connection is made to a localized region of a semiconductive substrate of one conductivity type underlying a layer which is normally an insulating layer, the improvement comprising forming the normally insulating layer of a wide band-gap undoped semiconductive carbon to be of high resistivity, and implanting selectively the portion of the layer overlying the region to be connected with a dopant said dopant being of the same conductivity type as the localized region.
Claim 2
Dependent Claim
86 words
In a process of manufacturing an integrated circuit in which a low resistance connection is made to a localized region of a semiconductive substrate of one conductivity type underlying a layer which is normally an insulating layer, the improvement comprising forming the normally insulating layer of a wide band-gap undoped semiconductive carbon to be of high resistivity, and implanting selectively the portion of the layer overlying the region to be connected with a dopant said dopant being of the same conductivity type as the localized region.
Claim 3
Dependent Claim
26 words
The process of claim 1 in which the substrate is silicon and the dopant implanted is nitrogen to make the implanted portion n-type of low resistivity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-01 | 1991-08-03 | 1992-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-01 | 1995-08-03 | 1996-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-01 | 1999-08-03 | 2000-02-02 | $7700.00 | Window Closed / Lapsed |