US6235629B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing a semiconductor device
Assignee: Sharp Corp
•
Filing: 1999-08-25
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Granted: 2001-05-22
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Expires: 2019-08-25
Abstract
Abstract A process for producing a semiconductor device comprising the steps of: forming a first insulating film on an underlayer having an electrically conductive layer; forming a first opening in the first insulating film to expose at least part of the electrically conductive layer; forming on the first insulating film a second insulating film which is more susceptible to etching than the first insulating film while filling the first opening with the second insulating film; forming a mask having an opening at least as large as the first opening in a region on the second insulating film which region corresponds to the first opening; removing at least the second insulating film filling the first opening with use of the mask thereby to form a second opening; depositing a material for forming a wiring layer entirely on a surface so as to fill the first opening and the second opening with the material, thereby to form in the first opening and the second opening a wiring layer which electrically connects to the electrically conductive layer; and removing the material for forming the wiring layer deposited on an upper surface of the second opening and on the second insulating film, by polishing.
Inventors
- 👤 Nobuyuki Takenaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085; H10W20/086; H10W20/0886; H10W20/0888
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
199 words
A process for producing a semiconductor device comprising the steps of: forming a first insulating film on an underlayer having an electrically conductive layer; forming a first opening in the first insulating film to expose at least part of the electrically conductive layer; forming on the first insulating film a second insulating film which is more susceptible to etching than the first insulating film while filling the first opening with the second insulating film; forming a mask having an opening at least as large as the first opening in a region on the second insulating film which region corresponds to the first opening; removing at least the second insulating film filling the first opening with use of the mask thereby to form a second opening; depositing a material for forming a wiring layer entirely on a surface so as to fill the first opening and the second opening with the material, thereby to form in the first opening and the second opening a wiring layer which electrically connects to the electrically conductive layer; and removing the material for forming the wiring layer deposited on an upper surface of the second opening and on the second insulating film, by polishing.
Claim 2
Dependent Claim
199 words
A process for producing a semiconductor device comprising the steps of: forming a first insulating film on an underlayer having an electrically conductive layer; forming a first opening in the first insulating film to expose at least part of the electrically conductive layer; forming on the first insulating film a second insulating film which is more susceptible to etching than the first insulating film while filling the first opening with the second insulating film; forming a mask having an opening at least as large as the first opening in a region on the second insulating film which region corresponds to the first opening; removing at least the second insulating film filling the first opening with use of the mask thereby to form a second opening; depositing a material for forming a wiring layer entirely on a surface so as to fill the first opening and the second opening with the material, thereby to form in the first opening and the second opening a wiring layer which electrically connects to the electrically conductive layer; and removing the material for forming the wiring layer deposited on an upper surface of the second opening and on the second insulating film, by polishing.
Claim 3
Dependent Claim
22 words
A process according to claim 1 , wherein the second insulating film has a smaller dielectric constant than the first insulating film.
Claim 4
Dependent Claim
18 words
A process according to claim 1 , wherein the first insulating film is formed of a silicon oxide.
Claim 5
Dependent Claim
25 words
A process according to claim 1 , wherein the second insulating film is formed of a fluorinated amorphous carbon, a polytetrafluorooxy-p-xylene or a polyarylene ether.
Claim 6
Dependent Claim
22 words
A process according to claim 1 , wherein the mask is formed of a silicon nitride, silicon nitric oxide or silicon oxide.
Claim 7
Dependent Claim
49 words
A process according to claim 1 , wherein the first insulating film is formed of a silicon oxide and the second insulating film is formed of a fluorinated amorphous carbon, polytetrafluorooxy-p-xylene or polyarylene ether, and the mask is formed of a silicon nitride, silicon nitric oxide or silicon oxide.
Claim 8
Dependent Claim
29 words
A process according to claim 1 , wherein the electrically conductive layer is a wiring layer, a gate electrode or a source/drain region formed in an interlayer dielectric film.
Claim 9
Dependent Claim
31 words
A process according to claim 1 , wherein the first opening has a width of 50 to 500 nm in a section perpendicular to a longitudinal direction of the wiring layer.
Claim 10
Dependent Claim
31 words
A process according to claim 1 , wherein the second opening has a width of 50 to 1000 nm in a section perpendicular to a longitudinal direction of the wiring layer.
Claim 11
Dependent Claim
19 words
A process according to claim 1 , wherein the first opening has a height of 100 to 1500 nm.
Claim 12
Dependent Claim
19 words
A process according to claim 1 , wherein the second opening has a height of 100 to 1500 nm.
Claim 13
Dependent Claim
15 words
A process according to claim 1 , wherein the polishing is a chemical mechanical polishing.
Claim 14
Dependent Claim
20 words
A process according to claim 1 , wherein the first opening and the second opening are formed by anisotropic etching.
Claim 15
Dependent Claim
20 words
A process according to claim 1 , wherein the second insulating film has a thickness of 100 to 1000 nm.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-21 | 2004-11-20 | 2005-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-21 | 2008-11-20 | 2009-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-21 | 2012-11-20 | 2013-05-22 | $7700.00 | Window Closed / Lapsed |