US5087959A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Protective coating useful as a passivation layer for semiconductor devices
Assignee: Microwave Technology Inc
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Filing: 1988-03-02
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Granted: 1992-02-11
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Expires: 2008-03-02
Abstract
Abstract A protective coating useful as a passivation layer for semiconductor devices incorporates a thin film of an amorphous diamond-like carbon. In one implementation, a thin film of amorphous silicon is deposited over the carbon material. The semiconductive passivation coating prevents electrical shorts, dissipates charge build-up and protects against chemical contamination.
Inventors
- 👤 Masahiro Omori
- 👤 Edward B. Stoneham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:53
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/481; H10W74/10; H10W74/131; H10W74/137; H10W74/147
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
43 words
An assembly comprising: a support on which a number of electrically conductive elements are formed; and passivation material consisting essentially of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond disposed on portions of the surface of said support and said conductive elements.
Claim 2
Dependent Claim
43 words
An assembly comprising: a support on which a number of electrically conductive elements are formed; and passivation material consisting essentially of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond disposed on portions of the surface of said support and said conductive elements.
Claim 3
Dependent Claim
23 words
An assembly as in claim 1, including a thin film disposed on said passivation material wherein said thin film consists essentially of silicon.
Claim 4
Dependent Claim
21 words
An assembly as in claim 2, wherein the thickness of said silicon film is in the range of about 200-300 Å.
Claim 5
Dependent Claim
20 words
An assembly as in claim 1, wherein the thickness of said passivation material is in the range of 100-2000 Å.
Claim 6
Dependent Claim
25 words
An assembly as in claim 1, wherein said passivation material consists essentially of diamond-like carbon that is formed from a graphite material by sputter deposition.
Claim 7
Dependent Claim
22 words
An assembly as in claim 1, wherein said support comprises a semiconductive material that acts as a substrate for a semiconductor device.
Claim 8
Dependent Claim
22 words
An assembly as in claim 6, including metallization layers formed above a surface of said substrate to provide electrical connections and circuitry.
Claim 9
Dependent Claim
39 words
An assembly as in claim 7, including an air bridge comprising a metal connection that is connected to a metal conductor formed with said semiconductor device, such that said metal connection overlies but does not contact another metal conductor.
Claim 10
Dependent Claim
54 words
A structure comprising: a support on which a number of electrically conductive elements are formed; passivation material consisting essentially of one of, diamond-like carbon, polycrystalline diamond, and monocrystalline diamond covering portions oft he surface of said support and said conductive elements; and a thin film consisting essentially of silicon disposed on said passivation material.
Claim 11
Dependent Claim
54 words
A structure comprising: a support on which a number of electrically conductive elements are formed; passivation material consisting essentially of one of, diamond-like carbon, polycrystalline diamond, and monocrystalline diamond covering portions oft he surface of said support and said conductive elements; and a thin film consisting essentially of silicon disposed on said passivation material.
Claim 12
Dependent Claim
20 words
An assembly as in claim 5 wherein the diamond-like carbon is formed by sputter deposition in an argon-hydrogen gas mixture.
Claim 13
Dependent Claim
20 words
An assembly as in claim 5 wherein the diamond-like carbon is formed by sputter deposition in an argon-helium gas mixture.
Claim 14
Dependent Claim
17 words
An assembly as in claim 5 wherein the diamond-like carbon is formed by sputter deposition in argon.
Claim 15
Dependent Claim
25 words
A structure as in claim 9, wherein said passivation material consists essentially of diamond-like carbon that is formed from a graphite material by sputter deposition.
Claim 16
Dependent Claim
20 words
A structure as in claim 13 wherein the diamond-like carbon is formed by sputter deposition in an argon-hydrogen gas mixture.
Claim 17
Dependent Claim
20 words
A structure as in claim 13 wherein the diamond-like carbon is formed by sputter deposition in an argon-helium gas mixture.
Claim 18
Dependent Claim
17 words
A structure as in claim 13 wherein the diamond-like carbon is formed by sputter deposition in argon.
Claim 19
Dependent Claim
18 words
A semiconductor structure including: gallium arsenide field-effect transistor; and a diamond-like carbon passivation layer coating said field-effect transistor.
Claim 20
Dependent Claim
18 words
A semiconductor structure including: gallium arsenide field-effect transistor; and a diamond-like carbon passivation layer coating said field-effect transistor.
Claim 21
Dependent Claim
22 words
A semiconductor structure as in claim 17 wherein the diamond-like carbon layer is formed by sputter deposition in an argon-hydrogen gas mixture.
Claim 22
Dependent Claim
22 words
A semiconductor structure as in claim 17 wherein the diamond-like carbon layer is formed by sputter deposition in an argon-helium gas mixture.
Claim 23
Dependent Claim
19 words
A semiconductor structure as in claim 17 wherein said diamond-like carbon layer has a thickness of about 150 Angstroms.
Claim 24
Dependent Claim
19 words
A semiconductor structure as in claim 17 wherein the diamond-like carbon layer is formed by sputter deposition in argon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-10 | 1995-08-12 | 1996-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-10 | 1999-08-12 | 2000-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-10 | 2003-08-12 | 2004-02-11 | $7700.00 | Window Closed / Lapsed |