Patent US5087959A successfully refreshed from Google Patents.
US5087959A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Protective coating useful as a passivation layer for semiconductor devices
Assignee: Microwave Technology Inc
•
Filing: 1988-03-02
•
Granted: 1992-02-11
•
Expires: 2008-03-02
Abstract
Abstract A protective coating useful as a passivation layer for semiconductor devices incorporates a thin film of an amorphous diamond-like carbon. In one implementation, a thin film of amorphous silicon is deposited over the carbon material. The semiconductive passivation coating prevents electrical shorts, dissipates charge build-up and protects against chemical contamination.
Inventors
- 👤 Masahiro Omori
- 👤 Edward B. Stoneham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:06
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/481; H10W74/10; H10W74/131; H10W74/137; H10W74/147
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
43 words
An assembly comprising: a support on which a number of electrically conductive elements are formed; and passivation material consisting essentially of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond disposed on portions of the surface of said support and said conductive elements.
Claim 2
Dependent Claim
43 words
An assembly comprising: a support on which a number of electrically conductive elements are formed; and passivation material consisting essentially of one of diamond-like carbon, polycrystalline diamond, and monocrystalline diamond disposed on portions of the surface of said support and said conductive elements.
Claim 3
Dependent Claim
23 words
An assembly as in claim 1, including a thin film disposed on said passivation material wherein said thin film consists essentially of silicon.
Claim 4
Dependent Claim
21 words
An assembly as in claim 2, wherein the thickness of said silicon film is in the range of about 200-300 Å.
Claim 5
Dependent Claim
20 words
An assembly as in claim 1, wherein the thickness of said passivation material is in the range of 100-2000 Å.
Claim 6
Dependent Claim
25 words
An assembly as in claim 1, wherein said passivation material consists essentially of diamond-like carbon that is formed from a graphite material by sputter deposition.
Claim 7
Dependent Claim
22 words
An assembly as in claim 1, wherein said support comprises a semiconductive material that acts as a substrate for a semiconductor device.
Claim 8
Dependent Claim
22 words
An assembly as in claim 6, including metallization layers formed above a surface of said substrate to provide electrical connections and circuitry.
Claim 9
Dependent Claim
39 words
An assembly as in claim 7, including an air bridge comprising a metal connection that is connected to a metal conductor formed with said semiconductor device, such that said metal connection overlies but does not contact another metal conductor.
Claim 10
Dependent Claim
54 words
A structure comprising: a support on which a number of electrically conductive elements are formed; passivation material consisting essentially of one of, diamond-like carbon, polycrystalline diamond, and monocrystalline diamond covering portions oft he surface of said support and said conductive elements; and a thin film consisting essentially of silicon disposed on said passivation material.
Claim 11
Dependent Claim
54 words
A structure comprising: a support on which a number of electrically conductive elements are formed; passivation material consisting essentially of one of, diamond-like carbon, polycrystalline diamond, and monocrystalline diamond covering portions oft he surface of said support and said conductive elements; and a thin film consisting essentially of silicon disposed on said passivation material.
Claim 12
Dependent Claim
20 words
An assembly as in claim 5 wherein the diamond-like carbon is formed by sputter deposition in an argon-hydrogen gas mixture.
Claim 13
Dependent Claim
20 words
An assembly as in claim 5 wherein the diamond-like carbon is formed by sputter deposition in an argon-helium gas mixture.
Claim 14
Dependent Claim
17 words
An assembly as in claim 5 wherein the diamond-like carbon is formed by sputter deposition in argon.
Claim 15
Dependent Claim
25 words
A structure as in claim 9, wherein said passivation material consists essentially of diamond-like carbon that is formed from a graphite material by sputter deposition.
Claim 16
Dependent Claim
20 words
A structure as in claim 13 wherein the diamond-like carbon is formed by sputter deposition in an argon-hydrogen gas mixture.
Claim 17
Dependent Claim
20 words
A structure as in claim 13 wherein the diamond-like carbon is formed by sputter deposition in an argon-helium gas mixture.
Claim 18
Dependent Claim
17 words
A structure as in claim 13 wherein the diamond-like carbon is formed by sputter deposition in argon.
Claim 19
Dependent Claim
18 words
A semiconductor structure including: gallium arsenide field-effect transistor; and a diamond-like carbon passivation layer coating said field-effect transistor.
Claim 20
Dependent Claim
18 words
A semiconductor structure including: gallium arsenide field-effect transistor; and a diamond-like carbon passivation layer coating said field-effect transistor.
Claim 21
Dependent Claim
22 words
A semiconductor structure as in claim 17 wherein the diamond-like carbon layer is formed by sputter deposition in an argon-hydrogen gas mixture.
Claim 22
Dependent Claim
22 words
A semiconductor structure as in claim 17 wherein the diamond-like carbon layer is formed by sputter deposition in an argon-helium gas mixture.
Claim 23
Dependent Claim
19 words
A semiconductor structure as in claim 17 wherein said diamond-like carbon layer has a thickness of about 150 Angstroms.
Claim 24
Dependent Claim
19 words
A semiconductor structure as in claim 17 wherein the diamond-like carbon layer is formed by sputter deposition in argon.
References Cited (Backward Citations)
US3630678A
Cited
US3661526A
Cited
US4028149A
Cited
US4254426A
Cited
DE2944937A1
Cited
US4436766A
Cited
US4420765A
Cited
JPS58145134A
Cited
JPS60208852A
Cited
JPS616198A
Cited
EP0185787B1
Cited
US4722912A
Cited
US4767608A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-10 | 1995-08-12 | 1996-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-10 | 1999-08-12 | 2000-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-10 | 2003-08-12 | 2004-02-11 | $7700.00 | Window Closed / Lapsed |