EP0185787B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Plastic encapsulated semiconductor component
Assignee: TDK Micronas GmbH
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Filing: 1984-12-21
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Granted: 1988-08-10
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Expires: 2004-12-21
Abstract
No abstract record available.
Inventors
- 👤 Helga Vogt
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 14:54
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10W74/10; H10W74/131; H10W74/137; H10W74/147
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
62 words
Plastics-encapsulated semiconductor device comprising a semiconductor body (1) which, at least on one side, is provided with electrodes and conducting leads, with the entire surface of the semiconductor body, Including the electrodes and conducting leads, being covered by a coating (3) of silicon nitride, characterized in that the coating (3) of silicon nitride is covered with a coating (4) of silicon dioxide.
Claim 2
Dependent Claim
62 words
Plastics-encapsulated semiconductor device comprising a semiconductor body (1) which, at least on one side, is provided with electrodes and conducting leads, with the entire surface of the semiconductor body, Including the electrodes and conducting leads, being covered by a coating (3) of silicon nitride, characterized in that the coating (3) of silicon nitride is covered with a coating (4) of silicon dioxide.
Claim 3
Dependent Claim
28 words
A plastics-encapsulated semiconductor device as claimed in claim 1, characterized in that the coating (4) of silicon dioxide is covered with a further coating (5) of silicon nitride.
Claim 4
Dependent Claim
50 words
A plastics-encapsulated semiconductor device as claimed in claims 1 or 2, characterized in that the one or more coatings (3, 5) of silicon nitride have a thickness ranging between 0.2 and 0.8 µm, and that the coating (4) of silicon dioxide has a thickness ranging between 0.8 and 2.0 µm.
References Cited (Backward Citations)
No citation records indexed.
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