US6066577A
Expired / Lapsed
US
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Method for providing fluorine barrier layer between conductor and insulator for degradation prevention
Assignee: International Business Machines Corp
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Filing: 1997-09-25
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Granted: 2000-05-23
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Expires: 2017-09-25
Abstract
Abstract Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-free silicon dioxide barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.
Inventors
- 👤 Edward C. Cooney, III
- 👤 Hyun K. Lee
- 👤 Thomas L. McDevitt
- 👤 Anthony K. Stamper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/074; H10W20/075; H10W20/076; H10W20/077; H10W20/081; H10W20/093; H10W20/096; H10W20/097; Y; Y10; Y10S; Y10S438/00; Y10S438/963
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
47 words
A method of improving the resistance of a metal against degradation from exposure to fluorine, comprising the steps of: providing an insulator layer containing fluorine; forming a fluorine-free barrier layer consisting of fluorine-free silicon dioxide on said insulator layer; and forming metal on said fluorine-free barrier layer.
Claim 2
Independent Claim
47 words
A method of improving the resistance of a metal against degradation from exposure to fluorine, comprising the steps of: providing an insulator layer containing fluorine; forming a fluorine-free barrier layer consisting of fluorine-free silicon dioxide on said insulator layer; and forming metal on said fluorine-free barrier layer.
Claim 3
Independent Claim
44 words
A method of improving degradation resistance of metallurgy, comprising the steps of: providing an insulator film containing fluorine; depositing a fluorine-free barrier layer consisting of fluorine-free silicon dioxide on said insulator film; and forming a pattern of metal lines on said fluorine-free barrier layer.
Claim 4
Independent Claim
44 words
A method of improving degradation resistance of metallurgy, comprising the steps of: providing an insulator film containing fluorine; depositing a fluorine-free barrier layer consisting of fluorine-free silicon dioxide on said insulator film; and forming a pattern of metal lines on said fluorine-free barrier layer.
Claim 5
Dependent Claim
29 words
The method of claim 2, wherein said step of depositing said fluorine-free barrier layer comprises a deposition process selected from the group consisting of PECVD, PVD, HDPCVD, and LPCVD.
Claim 6
Dependent Claim
14 words
The method of claim 2, wherein said insulator film is an oxide insulator film.
Claim 7
Dependent Claim
16 words
The method of claim 2, wherein said insulator film is SiO z F 2-z where 0<z<2.
Claim 8
Dependent Claim
64 words
The method of claim 2, wherein said metal lines comprise metal material selected from the group consisting of Al, Al--Si, Al--Cu, Al--Si--Cu, Cu, Cu--Sn, Cu--Si, Au, Au--Zn, Au--Ge, Ni, Cr, CrSi 2 , Ge, Mo, MoSi 2 , Pd, PdSi 2 , Pt, PtSi, Ta, TaSi 2 , Ti, TiN, Ti--Pt, Ti--W, TiSi 2 , W, WSi 2 , WN, and ZrSi 2 .
Claim 9
Dependent Claim
28 words
The method of claim 2, wherein said metal lines comprise metal material selected from the group consisting of an aluminum-containing material, a titanium-containing material, and a copper-containing material.
Claim 10
Dependent Claim
13 words
The method of claim 2, wherein said metal lines are an aluminum-containing material.
Claim 11
Dependent Claim
20 words
The method of claim 2, wherein said fluorine-free barrier layer has a thickness ranging from 1 nm to 300 nm.
Claim 12
Dependent Claim
32 words
The method of claim 2, further comprising, prior to said step of providing said insulator film, the steps of providing a substrate and forming a pattern of metal lines on said substrate.
Claim 13
Dependent Claim
25 words
The method of claim 2, wherein said step of providing said insulator layer comprises chemical vapor depositing a silicon dioxide film with in-situ fluorine doping.
Claim 14
Dependent Claim
20 words
The method of claim 2, wherein said fluorine-free barrier layer has a thickness ranging from 5 nm to 300 nm.
Claim 15
Independent Claim
71 words
A method of improving degradation resistance of metallurgy, comprising the steps of: providing a substrate; forming a patterned metallization on said substrate; forming a first fluorine-free barrier layer consisting of fluorine-free silicon dioxide on said substrate and on said patterned metallization; forming a fluorine-containing insulator layer on said first fluorine-free barrier layer; and forming a second fluorine-free barrier layer consisting of fluorine-free silicon dioxide on top of said fluorine-containing insulator layer.
Claim 16
Independent Claim
71 words
A method of improving degradation resistance of metallurgy, comprising the steps of: providing a substrate; forming a patterned metallization on said substrate; forming a first fluorine-free barrier layer consisting of fluorine-free silicon dioxide on said substrate and on said patterned metallization; forming a fluorine-containing insulator layer on said first fluorine-free barrier layer; and forming a second fluorine-free barrier layer consisting of fluorine-free silicon dioxide on top of said fluorine-containing insulator layer.
Claim 17
Dependent Claim
44 words
The method of claim 13, further comprising the additional steps of: forming a via through said second fluorine-free barrier layer, said fluorine-containing insulator layer, and said first fluorine-free barrier layer, and filling said via with metal wherein said via metal contacts said patterned metallization.
Claim 18
Dependent Claim
29 words
The method of claim 14, further comprising the step of forming a second patterned metallization on top of said second fluorine-free barrier layer in contact with said via metal.
Claim 19
Dependent Claim
26 words
The method of claim 13, wherein said step of forming said fluorine-containing insulator layer comprises chemical vapor depositing a silicon dioxide film with in-situ fluorine doping.
Claim 20
Dependent Claim
36 words
The method of claim 13, wherein said silicon oxide of said first fluorine-free barrier layer and said silicon oxide of said second fluorine-free barrier layer each has a thickness ranging from 1 nm to 300 nm.
Claim 21
Dependent Claim
36 words
The method of claim 13, wherein said silicon oxide of said first fluorine-free barrier layer and said silicon oxide of said second fluorine-free barrier layer each has a thickness ranging from 5 nm to 300 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-23 | 2003-11-22 | 2004-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-23 | 2007-11-22 | 2008-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-23 | 2011-11-22 | 2012-05-23 | $7700.00 | Window Closed / Lapsed |