US5850102A
Expired / Lapsed
US
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Semiconductor device having a second insulating layer which includes carbon or fluorine at a density lower than a first insulating layer
Assignee: Toshiba Corp
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Filing: 1997-04-02
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Granted: 1998-12-15
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Expires: 2017-04-02
Abstract
Abstract This invention is related to a metallization of Cu. The semiconductor device comprises a first insulating layer having a groove in a surface thereof, a second insulating layer on a surface of the groove, made of a material having a low density of crystal defects in comparison with that of the first insulating layer, and a wiring layer buried in the groove, surrounded by the second insulating layer.
Inventors
- 👤 Tadashi Matsuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/40; H10W20/45; H10W20/47; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; H10W20/031; H10W20/032; H10W20/033; H10W20/056; H10W20/48
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
81 words
A semiconductor device comprising: a first insulating layer having a groove in a surface thereof; a second insulating layer on a surface of the groove, the second insulating layer having a lower density of crystal defects than the first insulating layer; and a wiring layer in the groove, the second insulating layer being between the wiring layer and the surface of the groove, wherein the second insulating layer includes carbon or fluorine at a density lower than the first insulating layer.
Claim 2
Dependent Claim
81 words
A semiconductor device comprising: a first insulating layer having a groove in a surface thereof; a second insulating layer on a surface of the groove, the second insulating layer having a lower density of crystal defects than the first insulating layer; and a wiring layer in the groove, the second insulating layer being between the wiring layer and the surface of the groove, wherein the second insulating layer includes carbon or fluorine at a density lower than the first insulating layer.
Claim 3
Dependent Claim
19 words
The semiconductor device according to claim 1, wherein a thickness of the second insulating layer is about 50 nm.
Claim 4
Dependent Claim
18 words
The semiconductor device according to claim 1, wherein the second insulating layer comprises silicon dioxide or silicon nitride.
Claim 5
Dependent Claim
30 words
The semiconductor device according to claim 1, wherein the first insulating layer includes carbon or fluorine in an amount sufficient to lower the dielectric constant of the first insulating layer.
Claim 6
Dependent Claim
21 words
The semiconductor device according to claim 4, wherein the dielectric constant of the first insulating layer is less than about 3.9.
Claim 7
Dependent Claim
30 words
The semiconductor device according to claim 4, wherein the amount of F or C in the second insulating layer does not influence the dielectric constant of the second insulating layer.
Claim 8
Dependent Claim
29 words
The semiconductor device according to claim 1, wherein the wiring layer comprises a metal selected from the group consisting of an alloy of Al and Cu, Ag, and Au.
Claim 9
Dependent Claim
16 words
The semiconductor device according to claim 1, wherein the first insulating layer comprises an organic compound.
Claim 10
Dependent Claim
84 words
A semiconductor device comprising: an interlayer insulating layer having a groove in a surface thereof; a first insulating layer on a surface of the groove, the first insulating layer having a density of carbon or fluorine lower than the interlayer insulating layer; a barrier metal layer on the first insulating layer; a wiring layer in the groove, the barrier metal layer being between the wiring layer and the first insulating layer; and a second insulating layer covering an upper surface of the wiring layer.
Claim 11
Dependent Claim
84 words
A semiconductor device comprising: an interlayer insulating layer having a groove in a surface thereof; a first insulating layer on a surface of the groove, the first insulating layer having a density of carbon or fluorine lower than the interlayer insulating layer; a barrier metal layer on the first insulating layer; a wiring layer in the groove, the barrier metal layer being between the wiring layer and the first insulating layer; and a second insulating layer covering an upper surface of the wiring layer.
Claim 12
Dependent Claim
19 words
The semiconductor device according to claim 9, wherein a thickness of the first insulating layer is about 50 nm.
Claim 13
Dependent Claim
18 words
The semiconductor device according to claim 9, wherein tho first insulating layer comprises silicon dioxide or silicon nitride.
Claim 14
Dependent Claim
29 words
The semiconductor device according to claim 9, wherein the wiring layer comprises a metal selected from the group consisting of: an alloy of Al and Cu, Ag, and Au.
Claim 15
Dependent Claim
16 words
The semiconductor device according to claim 9, wherein the interlayer insulating layer comprises an organic compound.
Claim 16
Dependent Claim
30 words
The semiconductor device according to claim 9, wherein the interlayer insulating layer contains F and/or C in an amount sufficient to lower the dielectric constant of the interlayer insulating layer.
Claim 17
Dependent Claim
77 words
A semiconductor device comprising: an interlayer insulating layer on a semiconductor substrate, having dielectric constant less than about 3.9; a wiring layer buried in a groove in a surface of the interlayer insulating layer; and a first insulating layer between the interlayer insulating layer and the wiring layer, the first insulating layer preventing a reaction with the wiring layer, wherein the first insulating layer includes carbon or fluorine at a density lower than the interlayer insulating layer.
Claim 18
Dependent Claim
77 words
A semiconductor device comprising: an interlayer insulating layer on a semiconductor substrate, having dielectric constant less than about 3.9; a wiring layer buried in a groove in a surface of the interlayer insulating layer; and a first insulating layer between the interlayer insulating layer and the wiring layer, the first insulating layer preventing a reaction with the wiring layer, wherein the first insulating layer includes carbon or fluorine at a density lower than the interlayer insulating layer.
Claim 19
Dependent Claim
19 words
The semiconductor device according to claim 15, wherein a thickness of the first insulating layer is about 50 nm.
Claim 20
Dependent Claim
18 words
The semiconductor device according to claim 15, wherein the first insulating layer comprises silicon dioxide or silicon nitride.
Claim 21
Dependent Claim
30 words
The semiconductor device according to claim 15, wherein the interlayer insulating layer contains F and/or C in an amount sufficient to lower the dielectric constant of the interlayer insulating layer.
Claim 22
Dependent Claim
20 words
The semiconductor device according to claim 18, wherein dielectric constant of the interlayer insulating layer is less than about 3.9.
Claim 23
Dependent Claim
30 words
The semiconductor device according to claim 18, wherein the amount of fluorine or carbon in the first insulating layer does not influence the dielectric constant of the first insulating layer.
Claim 24
Dependent Claim
29 words
The semiconductor device according to claim 15, wherein the wiring layer comprises a metal selected from the group consisting of: an alloy of Al and Cu, Ag, and Au.
Claim 25
Dependent Claim
15 words
The semiconductor device according to claim 15, wherein the interlayer insulating layer comprises an organic.
Claim 26
Dependent Claim
16 words
The semiconductor device according to claim 15, wherein the interlayer insulating layer comprises an inorganic compound.
Claim 27
Dependent Claim
30 words
The semiconductor device according to claim 23, wherein the inorganic compound is an insulator made by high-density plasma CVD whose density of plasma is above 1×10 11 cm -3 .
Claim 28
Dependent Claim
19 words
The semiconductor device according to claim 15, wherein the interlayer insulating layer comprises an insulator including an SiF group.
Claim 29
Dependent Claim
22 words
The semiconductor device according to claim 15, wherein the interlayer insulating layer comprises a gas sealed between at least two wiring layers.
References Cited (Backward Citations)
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