US5592024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a wiring layer with a barrier layer
Assignee: Toshiba Corp
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Filing: 1994-10-28
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Granted: 1997-01-07
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Expires: 2014-10-28
Abstract
Abstract A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
Inventors
- 👤 Hisako Aoyama
- 👤 Kyoichi Suguro
- 👤 Hiromi Niiyama
- 👤 Hitoshi Tamura
- 👤 Hisataka Hayashi
- 👤 Tomonori Aoyama
- 👤 Gaku Minamihaba
- 👤 Tadashi Iijima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:24
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/031; H10W20/032; H10W20/033; H10W20/036; H10W20/037; H10W20/038; H10W20/039; H10W20/047; H10W20/048; H10W20/049; H10W20/055; H10W20/056; H10W20/062; H10W20/069; H10W20/0693; H10W20/075; H10W20/076; H10W20/081; H10W20/084; H10W20/086; H10W20/088; H10W20/093; H10W20/096; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W20/4432; H10W20/4435; H10W20/45; H10W20/47; H10W20/48; H10W20/063; H10W20/0888; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
119 words
A semiconductor device comprising: a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on said semiconductor substrate; an insulating barrier layer, formed on said interlayer insulating film and having a thickness of 1 to 100 nm, for preventing diffusion of a metal contained in a wiring layer; a conductive barrier layer, formed on said insulating barrier layer, for preventing diffusion of said metal; and a wiring layer containing said metal on said conductive barrier layer, said conductive barrier layer extending to cover a side surface of said wiring layer, and said insulating barrier layer extending to cover that portion of said conductive barrier layer which covers the side surface of said wiring layer.
Claim 2
Dependent Claim
119 words
A semiconductor device comprising: a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on said semiconductor substrate; an insulating barrier layer, formed on said interlayer insulating film and having a thickness of 1 to 100 nm, for preventing diffusion of a metal contained in a wiring layer; a conductive barrier layer, formed on said insulating barrier layer, for preventing diffusion of said metal; and a wiring layer containing said metal on said conductive barrier layer, said conductive barrier layer extending to cover a side surface of said wiring layer, and said insulating barrier layer extending to cover that portion of said conductive barrier layer which covers the side surface of said wiring layer.
Claim 3
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein said insulating barrier layer is a denatured layer obtained by plasma-nitriding a surface of said interlayer insulating film.
Claim 4
Dependent Claim
25 words
The semiconductor device according to claim 2, wherein said denatured layer contains Si x N y O z (x, y, and z are positive numbers).
Claim 5
Dependent Claim
47 words
The semiconductor device according to claim 1, wherein said conductive barrier layer contains a member selected from the group consisting of Al, Ti, TiN, Nb, W, a lamination of layers of at least two of these members, and an alloy of at least two of these members.
Claim 6
Dependent Claim
113 words
A semiconductor device comprising: a semiconductor substrate in which a semiconductor element is formed; an interlayer insulating film formed on said semiconductor substrate; a first insulating barrier layer, formed on said interlayer insulating film, for preventing diffusion of a metal contained in a wiring layer; a first conductive barrier layer, formed on said insulating barrier layer, for preventing diffusion of said metal; a wiring layer containing said metal on said conductive barrier layer; a second conductive barrier layer, formed on side and top surfaces of said wiring layer, for preventing diffusion of said metal; and a second insulating barrier layer, formed on said second conductive barrier layer, for preventing diffusion of said metal.
Claim 7
Dependent Claim
113 words
A semiconductor device comprising: a semiconductor substrate in which a semiconductor element is formed; an interlayer insulating film formed on said semiconductor substrate; a first insulating barrier layer, formed on said interlayer insulating film, for preventing diffusion of a metal contained in a wiring layer; a first conductive barrier layer, formed on said insulating barrier layer, for preventing diffusion of said metal; a wiring layer containing said metal on said conductive barrier layer; a second conductive barrier layer, formed on side and top surfaces of said wiring layer, for preventing diffusion of said metal; and a second insulating barrier layer, formed on said second conductive barrier layer, for preventing diffusion of said metal.
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