US6153935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual etch stop/diffusion barrier for damascene interconnects
Assignee: GlobalFoundries Inc
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Filing: 1999-09-30
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Granted: 2000-11-28
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Expires: 2019-09-30
Abstract
Abstract A damascene interconnect containing a dual etch stop/diffusion barrier. The conductive material of the damascene interconnect is capped with a conductive metal diffusion barrier cap, typically using electroless deposition, and, optionally, with a dielectric etch-stop layer. An optional chemical mechanical polish-stop layer may also be present. The different methods of the invention allow the CMP stop, reactive-ion etch stop, and metal diffusion barrier requirements of the different layers to be decoupled. A preferred conductive material is copper.
Inventors
- 👤 Daniel C. Edelstein
- 👤 Timothy J. Dalton
- 👤 John G. Gaudiello
- 👤 Mahadevaiyer Krishnan
- 👤 Sandra G. Malhotra
- 👤 Maurice McGlashan-Powell
- 👤 Eugene J. O'Sullivan
- 👤 Carlos J. Sambucetti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:16
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10P14/00; H10P14/40; H10P14/46; H10P52/00; H10P52/40; H10P52/403; H10W20/071; H10W20/074; H10W20/077
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
97 words
A structure comprising: a substrate; a dielectric layer over the substrate; a chemical mechanical polish-stop layer over the dielectric layer, the chemical mechanical polish-stop layer having an upper surface; an opening in the dielectric layer and the chemical mechanical polish-stop layer; a conductive liner lining the opening; a conductive material filling the opening and in electrical contact with the conductive liner, the conductive material having an upper surface coplanar with the upper surface of the chemical mechanical polish-stop layer; and a conductive metal diffusion barrier cap over the conductive material and in contact with the conductive material.
Claim 2
Dependent Claim
97 words
A structure comprising: a substrate; a dielectric layer over the substrate; a chemical mechanical polish-stop layer over the dielectric layer, the chemical mechanical polish-stop layer having an upper surface; an opening in the dielectric layer and the chemical mechanical polish-stop layer; a conductive liner lining the opening; a conductive material filling the opening and in electrical contact with the conductive liner, the conductive material having an upper surface coplanar with the upper surface of the chemical mechanical polish-stop layer; and a conductive metal diffusion barrier cap over the conductive material and in contact with the conductive material.
Claim 3
Dependent Claim
29 words
The structure of claim 1 in which the conductive material is selected from the group consisting of copper, aluminum, tungsten, silver, gold, conductive mixtures thereof, and conductive alloys thereof.
Claim 4
Dependent Claim
18 words
The structure of claim 2 in which the conductive metal barrier cap comprises one of Co(W)--P and Co(W)--B.
Claim 5
Dependent Claim
19 words
The structure of claim 2 in which the conductive metal barrier cap comprises one of tin, palladium, and indium.
Claim 6
Dependent Claim
12 words
The structure of claim 2 in which the conductive material is copper.
Claim 7
Dependent Claim
12 words
The structure of claim 5 in which the opening is a via.
Claim 8
Dependent Claim
12 words
The structure of claim 5 in which the opening is a trench.
Claim 9
Dependent Claim
27 words
The structure of claim 2 further comprising a dielectric etch-stop layer over the chemical mechanical polish stop-layer, the conductive liner, and the conductive metal diffusion barrier cap.
Claim 10
Dependent Claim
29 words
The structure of claim 8 in which the conductive material is selected from the group consisting of copper, aluminum, tungsten, silver, gold, conductive mixtures thereof, and conductive alloys thereof.
Claim 11
Dependent Claim
18 words
The structure of claim 8 in which the conductive metal barrier cap comprises one of Co(W)--P and Co(W)--B.
Claim 12
Dependent Claim
19 words
The structure of claim 8 in which the conductive metal barrier cap comprises one of tin, palladium, and indium.
Claim 13
Dependent Claim
12 words
The structure of claim 8 in which the conductive material is copper.
Claim 14
Dependent Claim
12 words
The structure of claim 12 in which the opening is a via.
Claim 15
Dependent Claim
12 words
The structure of claim 12 in which the opening is a trench.
Claim 16
Dependent Claim
14 words
The structure of claim 12 in which the dielectric etch-stop layer is silicon nitride.
Claim 17
Dependent Claim
97 words
A structure comprising: a substrate; a dielectric layer over the substrate, the dielectric layer having an upper surface; an opening formed in the dielectric layer; a conductive liner lining the opening; a conductive material filling the opening and in electrical contact with the conductive liner, the conductive material having an upper surface coplanar with the upper surface of the dielectric layer; a conductive metal diffusion barrier cap over the conductive material and in contact with the conductive material; and a dielectric etch-stop layer over the dielectric layer, the conductive liner, and the conductive metal diffusion barrier cap.
Claim 18
Dependent Claim
97 words
A structure comprising: a substrate; a dielectric layer over the substrate, the dielectric layer having an upper surface; an opening formed in the dielectric layer; a conductive liner lining the opening; a conductive material filling the opening and in electrical contact with the conductive liner, the conductive material having an upper surface coplanar with the upper surface of the dielectric layer; a conductive metal diffusion barrier cap over the conductive material and in contact with the conductive material; and a dielectric etch-stop layer over the dielectric layer, the conductive liner, and the conductive metal diffusion barrier cap.
Claim 19
Dependent Claim
29 words
The structure of claim 16 in which the conductive material is selected from the group consisting of copper, aluminum, tungsten, silver, gold, conductive mixtures thereof, and conductive alloys thereof.
Claim 20
Dependent Claim
18 words
The structure of claim 17 in which the conductive metal barrier cap comprises one of Co(W)--P and Co(W)--B.
Claim 21
Dependent Claim
19 words
The structure of claim 17 in which the conductive metal barrier cap comprises one of tin, palladium, and indium.
Claim 22
Dependent Claim
12 words
The structure of claim 17 in which the conductive material is copper.
Claim 23
Dependent Claim
12 words
The structure of claim 20 in which the opening is a via.
Claim 24
Dependent Claim
12 words
The structure of claim 20 in which the opening is a trench.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |