US6184572B1
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Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
Assignee: Novellus Systems Inc
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Filing: 1998-04-29
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Granted: 2001-02-06
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Expires: 2018-04-29
Abstract
Abstract An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.
Inventors
- 👤 Thomas Weller Mountsier
- 👤 Michael J. Shapiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/687; H10P14/65; H10P14/6502; H10P14/6506; H10P14/66; H10P14/662; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/6903; H10P14/6905; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
81 words
An interlevel dielectric layer stack for a semiconductor device comprising: a bottom adhesion layer composed of a silicon carbide material containing hydrogen; a middle dielectric layer composed of fluorinated amorphous carbon film, wherein the fluorinated amorphous carbon film has an atomic fluorine content between 40% and 45%; and a top adhesion layer composed of a silicon carbide material containing hydrogen, the top adhesion layer also serving as a capping layer to contain gas discharge out of the fluorinated amorphous carbon film.
Claim 2
Dependent Claim
81 words
An interlevel dielectric layer stack for a semiconductor device comprising: a bottom adhesion layer composed of a silicon carbide material containing hydrogen; a middle dielectric layer composed of fluorinated amorphous carbon film, wherein the fluorinated amorphous carbon film has an atomic fluorine content between 40% and 45%; and a top adhesion layer composed of a silicon carbide material containing hydrogen, the top adhesion layer also serving as a capping layer to contain gas discharge out of the fluorinated amorphous carbon film.
Claim 3
Dependent Claim
22 words
The interlevel dielectric stack of claim 1 wherein the silicon carbide material containing hydrogen has a Si:C atomic ratio of approximately 1:1.
Claim 4
Dependent Claim
31 words
The interlevel dielectric stack of claim 1 wherein the top adhesion layer is thicker than the bottom adhesion layer, whereby the top adhesion layer simultaneously functions as a hard mask layer.
Claim 5
Dependent Claim
12 words
A semiconductor device comprising the interlevel dielectric stack of claim 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-02-06 | 2004-08-07 | 2005-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-02-06 | 2008-08-07 | 2009-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-02-06 | 2012-08-07 | 2013-02-06 | $7700.00 | Window Closed / Lapsed |