Article comprising fluorinated amorphous carbon and process for fabricating article

Abstract

Abstract The invention provides a device containing a low κ, hydrogen-free a-C:F layer with good adhesion and thermal stability. It was found that the combination of desirable properties was attainable by a relatively easy process, as compared to processes that utilize gaseous sources, such as CVD. Specifically, the a-C:F layer is formed by sputter deposition, using only solid sources for the fluorine and carbon, and in the absence of any intentionally-added hydrogen-containing source. The sputtering is performed such that the layer contains 20 to 60 at. % fluorine, and also, advantageously, such that the a-C:F exhibits a bandgap of about 2.0 eV or greater. The a-C:F layer formed by the process of the invention exhibits a dielectric constant, at 1 MHz and room temperature, of 3.0 or less, advantageously 2.5 or less, and more advantageously 2.1 or less, along with being thermally stable up to at least 350° C., advantageously 450° C., and exhibiting a stress of about 100 MPa or less, in absolute value.

Inventors

• 👤 Sungho Jin
• 👤 Ruichen Liu
• 👤 Chien-Shing Pai
• 👤 Wei Zhu

Bibliographic Details