Diamond-like carbon for use in VLSI and ULSI interconnect systems

Claim 1

A method for forming an interconnect structure on a substrate having conductive regions on an upper surface comprising the steps of: forming a first layer of diamond-like carbon material on said upper surface of said substrate, wherein said diamond-like carbon material of said first layer is doped with v atomic percent Si or Ge; forming a second layer of diamond-like carbon material on said first layer, wherein said diamond-like carbon material of said second layer is doped with w atomic percent Si or Ge; forming a third layer of diamond-like carbon material on said second layer, wherein said diamond-like carbon material of said third layer is doped with x atomic percent Si or Ge; forming a fourth layer of diamond-like carbon material on said third layer, wherein said diamond-like carbon material of said forth layer is doped with y atomic percent Si or Ge; forming a fifth layer of diamond-like carbon material on said fourth layer, wherein said diamond-like carbon material of said fifth layer is doped with z atomic percent Si or Ge, wherein said diamond-like carbon material of said first, second, third, fourth and fifth layers is a carbon material which may have a microcrystalline phase in an amorphous matrix, and v, w, x, y and z are not all the same and are in the range from about 0 to about 25; forming a first mask over said fifth layer having openings above selected conductive regions; etching through said first mask and said fifth through first layers; removing said first mask; forming a second mask over said fifth layer having an interconnect pattern for interconnecting said selected conductive regions; etching through said second mask and said fifth and fourth layers; and filling said openings in said first through fifth layers and said fourth and fifth layers with a metal.

Claim 2

A method for forming an interconnect structure on a substrate having conductive regions on an upper surface comprising the steps of: forming a first layer of diamond-like carbon material on said upper surface of said substrate, wherein said diamond-like carbon material of said first layer is doped with v atomic percent Si or Ge; forming a second layer of diamond-like carbon material on said first layer, wherein said diamond-like carbon material of said second layer is doped with w atomic percent Si or Ge; forming a third layer of diamond-like carbon material on said second layer, wherein said diamond-like carbon material of said third layer is doped with x atomic percent Si or Ge; forming a fourth layer of diamond-like carbon material on said third layer, wherein said diamond-like carbon material of said forth layer is doped with y atomic percent Si or Ge; forming a fifth layer of diamond-like carbon material on said fourth layer, wherein said diamond-like carbon material of said fifth layer is doped with z atomic percent Si or Ge, wherein said diamond-like carbon material of said first, second, third, fourth and fifth layers is a carbon material which may have a microcrystalline phase in an amorphous matrix, and v, w, x, y and z are not all the same and are in the range from about 0 to about 25; forming a first mask over said fifth layer having openings above selected conductive regions; etching through said first mask and said fifth through first layers; removing said first mask; forming a second mask over said fifth layer having an interconnect pattern for interconnecting said selected conductive regions; etching through said second mask and said fifth and fourth layers; and filling said openings in said first through fifth layers and said fourth and fifth layers with a metal.