Patent EP0309878A2 successfully refreshed from Google Patents.
Patent US6531740B2 successfully refreshed from Google Patents.
US6531740B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated impedance matching and stability network
Assignee: NXP USA Inc
•
Filing: 2001-07-17
•
Granted: 2003-03-11
•
Expires: 2021-07-17
Abstract
Abstract An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.
Inventors
- 👤 Bruce Allen Bosco
- 👤 Rudy M. Emrick
- 👤 Steven James Franson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:53
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/08; H10D84/0107; H10D84/0109; H10W; H10W44/00; H10W44/501; H10W44/601
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
78 words
An impedance matching circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying a portion of the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; and said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate.
Claim 2
Dependent Claim
78 words
An impedance matching circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying a portion of the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; and said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate.
Claim 3
Dependent Claim
73 words
The impedance matching circuit of claim 1 wherein said impedance matching circuit comprising: a capacitor having two plates, said first plate coupled to an output of said active device, said second plate coupled to ground potential; a first inductor coupled to said first plate of said capacitor and coupled to said active device; and a second inductor coupled to said first plate of said capacitor and forming an output for said active device.
Claim 4
Dependent Claim
25 words
The impedance matching circuit of claim 2 wherein said second plate is coupled to ground potential by way of vias in said monocrystalline silicon substrate.
Claim 5
Dependent Claim
29 words
The impedance matching circuit of claim 2 wherein said second plate is coupled to ground potential by way of a highly conductive silicon region within said monocrystalline silicon substrate.
Claim 6
Dependent Claim
16 words
The impedance matching circuit of claim 1 wherein said active device is a high frequency transistor.
Claim 7
Dependent Claim
19 words
The impedance matching circuit of claim 1 wherein said active device is a Pseudomorphic High Electron Mobility Transistor (PHEMT).
Claim 8
Dependent Claim
16 words
The impedance matching circuit of claim 1 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
Claim 9
Dependent Claim
88 words
An impedance matching circuit and a stability circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate; and said stability circuit coupled to said impedance matching circuit.
Claim 10
Dependent Claim
88 words
An impedance matching circuit and a stability circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate; and said stability circuit coupled to said impedance matching circuit.
Claim 11
Dependent Claim
117 words
The impedance matching circuit and stability circuit of claim 8 , said impedance matching circuit comprising: a first capacitor having two plates, said first plate coupled to an output of said active device, said second plate coupled to ground potential; a first inductor coupled to said first plate of said first capacitor and coupled to said active device; and a second inductor coupled to said first plate of said first capacitor and forming an output for said active device; and said stability circuit comprising: a second capacitor having two plates, said second capacitor formed by having a first plate integrated with an input of said active device; and a resistor in parallel configuration to said second capacitor.
Claim 12
Dependent Claim
19 words
The impedance matching circuit and stability circuit of claim 8 wherein said active device is a high frequency transistor.
Claim 13
Dependent Claim
28 words
The impedance matching circuit and stability circuit of claim 10 wherein said second plate of said first capacitor is coupled to ground potential through vias in said substrate.
Claim 14
Dependent Claim
19 words
The impedance matching circuit and stability circuit of claim 10 wherein said resistor is fabricated on said silicon substrate.
Claim 15
Dependent Claim
21 words
The impedance matching circuit and stability circuit of claim 10 further comprising: a second resistor in parallel configuration with said resistor.
Claim 16
Dependent Claim
27 words
The impedance matching circuit and stability circuit of claim 10 wherein said resistor is fabricated by selectively depositing resistive material between said plates of said second capacitor.
Claim 17
Dependent Claim
28 words
The impedance matching circuit and stability circuit of claim 10 wherein said second plate is coupled to ground potential by way of vias in said monocrystalline silicon substrate.
Claim 18
Dependent Claim
32 words
The impedance matching circuit and stability circuit of claim 10 wherein said second plate is coupled to ground potential by way of a highly conductive silicon region within said monocrystalline silicon substrate.
Claim 19
Dependent Claim
22 words
The impedance matching circuit and stability circuit of claim 8 wherein said active device is a Pseudomorphic High Electron Mobility Transistor (PHEMT).
Claim 20
Dependent Claim
18 words
The impedance matching circuit and stability circuit of 8 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
Claim 21
Dependent Claim
18 words
The impedance matching circuit and stability circuit of 8 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
References Cited (Backward Citations)
US3670213A
Cited
US4242595A
Cited
US4424589A
Cited
US4289920A
Cited
US4459325A
Cited
US4398342A
Cited
US4667088A
Cited
US4482422A
Cited
US4756007A
Cited
US4773063A
Cited
US4748485A
Cited
US4841775A
Cited
US4901133A
Cited
US4772929A
Cited
US4868376A
Cited
US5511238A
Cited
US4845044A
Cited
US5073981A
Cited
US5227196A
Cited
US4984043A
Cited
US5504035A
Cited
US5055445A
Cited
US5051790A
Cited
US5081519A
Cited
US5281834A
Cited
US5880452A
Cited
US5441577A
Cited
US5185589A
Cited
US5194397A
Cited
US5140651A
Cited
US5453727A
Cited
US5827755A
Cited
US5466631A
Cited
US5406202A
Cited
US5492859A
Cited
US5825055A
Cited
US5650646A
Cited
US5442561A
Cited
US5572052A
Cited
EP0581239A2
Cited
US5602418A
Cited
US5314547A
Cited
US5356509A
Cited
US5515047A
Cited
US5352926A
Cited
US5494711A
Cited
US5371734A
Cited
US5528057A
Cited
US5596205A
Cited
US5394489A
Cited
US5514904A
Cited
US5792679A
Cited
US5656382A
Cited
US5549977A
Cited
US5656180A
Cited
US5515810A
Cited
US5948161A
Cited
US5478653A
Cited
US5883564A
Cited
US5491461A
Cited
US5504183A
Cited
US5479317A
Cited
US5473047A
Cited
US5486406A
Cited
US5519235A
Cited
US5789845A
Cited
US5846846A
Cited
US5777350A
Cited
US5552547A
Cited
US5610744A
Cited
US5679965A
Cited
US5528067A
Cited
US5838035A
Cited
US5754319A
Cited
US6108125A
Cited
US5833603A
Cited
US5801072A
Cited
DE19712496A1
Cited
US6225051B1
Cited
US6022140A
Cited
EP0810666A1
Cited
US6028853A
Cited
US5863326A
Cited
US6023082A
Cited
US5987011A
Cited
US6175555B1
Cited
US5872493A
Cited
US6153010A
Cited
US5959879A
Cited
US6153454A
Cited
US6078717A
Cited
US5907792A
Cited
US6229159B1
Cited
US6316832B1
Cited
US6049702A
Cited
US6184044B1
Cited
JPH11238683A
Cited
US6011646A
Cited
US6239449B1
Cited
EP0957522A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-10 | 2006-09-09 | 2007-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-10 | 2010-09-09 | 2011-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-10 | 2014-09-09 | 2015-03-11 | $7700.00 | Window Closed / Lapsed |