US5650646A
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Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
Assignee: Texas Instruments Inc
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Filing: 1995-02-27
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Granted: 1997-07-22
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Expires: 2015-02-27
Abstract
Abstract This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a buffer layer of non-Pb/Bi-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate; and depositing a Pb/Bi-containing high-dielectric constant oxide on the buffer layer. Alternately this may be a structure useful in semiconductor circuitry, comprising: a buffer layer 26 of non-lead-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate 10; and a lead-containing high-dielectric constant oxide 28 on the buffer layer. Preferably a germanium layer 12 is epitaxially grown on the semiconductor substrate and the buffer layer is grown on the germanium layer. When the substrate is silicon, the non-Pb/Bi-containing high-dielectric constant oxide layer is preferably less than about 10 nm thick. A second non-Pb/Bi-containing high-dielectric constant oxide layer 30 may be grown on top of the Pb/Bi-containing high-dielectric constant oxide and a conducting layer (top electrode 32) may also be grown on the second non-Pb/Bi-containing high-dielectric constant oxide layer.
Inventors
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10P14/65; H10P14/6502; H10P14/6506; H10P14/63; H10P14/6326; H10P14/6349; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69396; H10P14/69398; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/118; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
56 words
A structure useful in semiconductor circuitry, comprising: a germanium layer overlying a semiconductor substrate; a first buffer layer of substantially Pb and Bi free, high-dielectric constant oxide on said germanium layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 2
Dependent Claim
56 words
A structure useful in semiconductor circuitry, comprising: a germanium layer overlying a semiconductor substrate; a first buffer layer of substantially Pb and Bi free, high-dielectric constant oxide on said germanium layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 3
Dependent Claim
10 words
The structure of claim 1, wherein said substrate is silicon.
Claim 4
Dependent Claim
24 words
The structure of claim 2, wherein a non-single crystal silicon dioxide, silicon nitride, or silicon dioxide/silicon nitride layer is directly underlying said germanium layer.
Claim 5
Dependent Claim
16 words
The structure of claim 1, wherein said germanium layer is less than about 1 nm thick.
Claim 6
Dependent Claim
17 words
The structure of claim 1, wherein said substantially Pb and Bi free, high-dielectric constant oxide is single-crystal.
Claim 7
Dependent Claim
14 words
The structure of claim 5, wherein said second high-dielectric constant oxide layer is single-crystal.
Claim 8
Dependent Claim
11 words
The structure of claim 1, wherein said substrate is gallium arsenide.
Claim 9
Dependent Claim
29 words
The structure of claim 1, wherein a second buffer layer of substantially Pb and Bi free, high-dielectric constant oxide is on top of said second high-dielectric constant oxide layer.
Claim 10
Dependent Claim
24 words
The structure of claim 8, wherein a conducting layer is on top of said second substantially Pb and Bi free, high-dielectric constant oxide layer.
Claim 11
Dependent Claim
23 words
The structure of claim 1, wherein said substantially Pb and Bi free, high-dielectric constant oxide layer is less than about 10 nm thick.
Claim 12
Dependent Claim
13 words
The structure of claim 1, wherein both said high-dielectric constant oxides are titanates.
Claim 13
Dependent Claim
19 words
The structure of claim 11, wherein said substantially Pb and Bi free high-dielectric constant oxide is barium strontium titanate.
Claim 14
Dependent Claim
16 words
The structure of claim 1, wherein said second high-dielectric constant oxide layer is lead zirconate titanate.
Claim 15
Dependent Claim
14 words
The structure of claim 1, wherein both said high-dielectric constant oxides are ferroelectric oxides.
Claim 16
Dependent Claim
11 words
The structure of claim 1, wherein said structure is a capacitor.
Claim 17
Dependent Claim
58 words
A structure useful in semiconductor circuitry, comprising: a semiconductor substrate; a germanium layer on said semiconductor substrate; a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said germanium layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 18
Dependent Claim
58 words
A structure useful in semiconductor circuitry, comprising: a semiconductor substrate; a germanium layer on said semiconductor substrate; a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said germanium layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 19
Dependent Claim
58 words
A structure useful in semiconductor circuitry, comprising: a semiconductor substrate; a metal layer on said semiconductor substrate; a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said metal layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 20
Dependent Claim
58 words
A structure useful in semiconductor circuitry, comprising: a semiconductor substrate; a metal layer on said semiconductor substrate; a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said metal layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 21
Dependent Claim
56 words
A structure useful in semiconductor circuitry, comprising: a metal layer overlying a semiconductor substrate; a first buffer layer of substantially Pb and Bi free, high-dielectric constant oxide on said metal layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 22
Dependent Claim
56 words
A structure useful in semiconductor circuitry, comprising: a metal layer overlying a semiconductor substrate; a first buffer layer of substantially Pb and Bi free, high-dielectric constant oxide on said metal layer; and a second high-dielectric constant oxide layer comprising an element selected from the group consisting of: Pb, Bi, and combinations thereof, on said buffer layer.
Claim 23
Dependent Claim
29 words
The structure of claim 18, wherein a second buffer layer of substantially Pb and Bi free, high-dielectric constant oxide is on top of said second high-dielectric constant oxide layer.
Claim 24
Dependent Claim
24 words
The structure of claim 19, wherein a conducting layer is on top of said second substantially Pb and Bi free, high-dielectric constant oxide layer.
Claim 25
Dependent Claim
11 words
The structure of claim 18, wherein said structure is a capacitor.
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