US5453727A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor sensors and method for fabricating the same
Assignee: Asahi Kasei Corp
•
Filing: 1992-07-16
•
Granted: 1995-09-26
•
Expires: 2012-07-16
Abstract
Abstract PCT No. PCT/JP92/00908 Sec. 371 Date Mar. 15, 1993 Sec. 102(e) Date Mar. 15, 1993 PCT Filed Jul. 16, 1992 PCT Pub. No. WO93/02479 PCT Pub. Date Feb. 4, 1993.The present invention is a method of fabrication of a thin film of InxGa1-xAsySb1-y (0<x</=1.0, 0</=y</=1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of InxGa1-xAsySb1-y (0<x</=1.0, 0</=y</=1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.
Inventors
- 👤 Ichiro Shibasaki
- 👤 Naohiro Kuze
- 👤 Tatsuro Iwabuchi
- 👤 Kazuhiro Nagase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:01
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10N; H10N52/00; H10N52/101; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
123 words
A magnetic sensor, comprising: a first compound semiconductor layer having a high resistance; an InAs thin film layer grown on said first compound semiconductor layer; and an electrode formed on said InAs thin film layer, wherein said first compound semiconductor layer has a different composition from said InAs thin film layer, the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said InAs thin film layer to thereby have a lattice constant the same as or nearly the same as that of said InAs thin film layer, and wherein said first compound semiconductor layer has a band gap energy greater than that of the InAs thin film layer.
Claim 2
Dependent Claim
123 words
A magnetic sensor, comprising: a first compound semiconductor layer having a high resistance; an InAs thin film layer grown on said first compound semiconductor layer; and an electrode formed on said InAs thin film layer, wherein said first compound semiconductor layer has a different composition from said InAs thin film layer, the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said InAs thin film layer to thereby have a lattice constant the same as or nearly the same as that of said InAs thin film layer, and wherein said first compound semiconductor layer has a band gap energy greater than that of the InAs thin film layer.
Claim 3
Dependent Claim
149 words
A magnetic sensor, comprising: a first compound semiconductor layer having a high resistance; a thin film layer of In x Ga 1-x As (0<x<1.0) grown on said first compound semiconductor layer; and an electrode formed on said In x Ga 1-x As thin film layer, wherein said first compound semiconductor layer has a different composition from said In x Ga 1-x As thin film layer the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said In x Ga 1-x As thin film layer to thereby have a lattice constant the same as or nearly the same as that of the In x Ga 1-x As thin film layer and wherein said first compound semiconductor layer has a band gap energy greater than that of the In x Ga 1-x As thin film layer
Claim 4
Dependent Claim
149 words
A magnetic sensor, comprising: a first compound semiconductor layer having a high resistance; a thin film layer of In x Ga 1-x As (0<x<1.0) grown on said first compound semiconductor layer; and an electrode formed on said In x Ga 1-x As thin film layer, wherein said first compound semiconductor layer has a different composition from said In x Ga 1-x As thin film layer the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said In x Ga 1-x As thin film layer to thereby have a lattice constant the same as or nearly the same as that of the In x Ga 1-x As thin film layer and wherein said first compound semiconductor layer has a band gap energy greater than that of the In x Ga 1-x As thin film layer
Claim 5
Dependent Claim
99 words
A magnetic sensor, comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y<1.0) grown on said first compound semiconductor layer, and an electrode formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 6
Dependent Claim
99 words
A magnetic sensor, comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y<1.0) grown on said first compound semiconductor layer, and an electrode formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 7
Dependent Claim
23 words
A magnetic sensor as claimed in claim 1, wherein said InAs thin film layer has a film thickness of not more than 500Å.
Claim 8
Dependent Claim
26 words
A magnetic sensor as claimed in claim 2, wherein said In x Ga 1-x As thin film layer has a thickness of not more than 500Å.
Claim 9
Dependent Claim
27 words
A magnetic sensor as claimed in claim 3, wherein said In x Ga 1-x As y Sb 1-y layer has a thickness of not more than 500Å.
Claim 10
Dependent Claim
32 words
A magnetic sensor as claimed in claim 1 or 4, wherein an electron density of said InAs layer is within the range of from 5×10 16 to 8×10 18 /cm 3 .
Claim 11
Dependent Claim
20 words
A magnetic sensor as claimed in claim 7, wherein said first compound semiconductor layer is doped with a donor impurity.
Claim 12
Dependent Claim
36 words
A magnetic sensor as clammed in claim 2 or 5, wherein an electron density of said In x Ga 1-x As layer is within the range of from 5×10 16 to 8×10 18 /cm 3 .
Claim 13
Dependent Claim
20 words
A magnetic sensor as claimed in claim 9, wherein said first compound semiconductor layer is doped with a donor impurity.
Claim 14
Dependent Claim
39 words
A magnetic sensor as claimed in claim 3 or 6, wherein an electron density of said In x Ga 1-x As y Sb 1-y layer is within the range of from 5×10 16 to 8×10 18 /cm 3 .
Claim 15
Dependent Claim
20 words
A magnetic sensor as claimed in claim 11, wherein said first compound semiconductor layer is doped with a donor impurity.
Claim 16
Dependent Claim
25 words
A magnetic sensor as claimed in any one of claims 1 and 6, wherein said first compound semiconductor layer is doped with a donor impurity.
Claim 17
Dependent Claim
53 words
A magnetic sensor as claimed in claim 1, wherein a high resistance second compound semiconductor layer is formed on the InAs layer and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of InAs.
Claim 18
Dependent Claim
65 words
A magnetic sensor as claimed in claim 2, wherein a high resistance second compound semiconductor layer is formed on the In x Ga 1-x As layer and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of In x Ga 1-x As, and a band gap energy greater than that of In x Ga 1-x As.
Claim 19
Dependent Claim
76 words
A magnetic sensor as claimed in claim 3, wherein a high resistance second compound semiconductor layer is formed on the In x Ga 1-x As y Sb 1-y layer and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y .
Claim 20
Dependent Claim
23 words
A magnetic sensor as claimed in claim 14, wherein said InAs thin film layer has a film thickness of not more than 500Å.
Claim 21
Dependent Claim
26 words
A magnetic sensor as claimed in claim 15, wherein said In x Ga 1-x As thin film layer has a thickness of not more than 500Å.
Claim 22
Dependent Claim
27 words
A magnetic sensor as claimed in claim 16, wherein said In x Ga 1-x As y Sb 1-y layer has a thickness of not more than 500Å.
Claim 23
Dependent Claim
32 words
A magnetic sensor as claimed in claim 14 or 17, wherein an electron density of said InAs layer is within the range of from 5×10 16 to 8×10 18 /cm 3 .
Claim 24
Dependent Claim
31 words
A magnetic sensor as claimed in claim 20, wherein either one or both of said first compound semiconductor layer and said second compound semiconductor layer is doped with a donor impurity.
Claim 25
Dependent Claim
36 words
A magnetic sensor as claimed in claim 15 or 18, wherein an electron density of said In x Ga 1-x As layer is within the range of from 5×10 16 to 8×10 18 /cm 3 .
Claim 26
Dependent Claim
31 words
A magnetic sensor as claimed in claim 22, wherein either one or both of said first compound semiconductor layer and said second compound semiconductor layer is doped with a donor impurity.
Claim 27
Dependent Claim
39 words
A magnetic sensor as claimed in claim 16 or 19, wherein an electron density of said In x Ga 1-x As y Sb 1-y layer is within the range of from 5×10 16 to 8×10 18 /cm 3 .
Claim 28
Dependent Claim
31 words
A magnetic sensor as claimed in claim 24, wherein either one or both of said first compound semiconductor layer and said second compound semiconductor layer is doped with a donor impurity.
Claim 29
Dependent Claim
36 words
A magnetic sensor as claimed in any one of claims 14 through 19, wherein either one or both of said first compound semiconductor layer and said second compound semiconductor layer is doped with a donor impurity.
Claim 30
Independent Claim
67 words
A method for producing a magnetic sensor comprising the steps of; forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of InAs, forming a layer of InAs on said layer, treating said InAs layer, and forming a plurality of ohmic electrodes on said InAs layer.
Claim 31
Independent Claim
67 words
A method for producing a magnetic sensor comprising the steps of; forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of InAs, forming a layer of InAs on said layer, treating said InAs layer, and forming a plurality of ohmic electrodes on said InAs layer.
Claim 32
Independent Claim
84 words
A method for producing a magnetic sensor comprising the steps of; forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of In x Ga 1-x As, forming a layer of In x Ga 1-x As (0<x<1.0) on said layer, treating said In x Ga 1-x As layer, and forming a plurality of ohmic electrodes on said In x Ga 1-x As layer.
Claim 33
Independent Claim
84 words
A method for producing a magnetic sensor comprising the steps of; forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of In x Ga 1-x As, forming a layer of In x Ga 1-x As (0<x<1.0) on said layer, treating said In x Ga 1-x As layer, and forming a plurality of ohmic electrodes on said In x Ga 1-x As layer.
Claim 34
Independent Claim
106 words
A method for producing a magnetic sensor comprising the steps of; forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y , forming a layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y<1.0) on said layer, treating said In x Ga 1-x As y Sb 1-y layer, and forming a plurality of ohmic electrodes on said In x Ga 1-x As y Sb 1-y layer.
Claim 35
Independent Claim
106 words
A method for producing a magnetic sensor comprising the steps of; forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y , forming a layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y<1.0) on said layer, treating said In x Ga 1-x As y Sb 1-y layer, and forming a plurality of ohmic electrodes on said In x Ga 1-x As y Sb 1-y layer.
Claim 36
Dependent Claim
54 words
A method of producing a magnetic sensor as claimed in claim 27, further comprising a step of forming a high resistance second compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of InAs, on said InAs layer.
Claim 37
Dependent Claim
66 words
A method of producing a magnetic sensor as claimed in claim 28, further comprising a step of forming a high resistance second compound semiconductor layer having a lattice constant the same as or nearly the same as that of In x Ga 1-x As, and a band gap energy greater than that of In x Ga 1-x As, on said In x Ga 1-x As layer.
Claim 38
Dependent Claim
77 words
A method of producing a magnetic sensor as claimed in claim 29, further comprising a step of forming a high resistance second compound semiconductor layer having a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y , on said In x Ga 1-x As y Sb 1-y layer.
Claim 39
Dependent Claim
120 words
A hybrid magnetic sensor wherein a magnetic sensor comprising a high resistance first compound semiconductor layer in that, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y , and a silicon monolithic integrated circuit chip are molded together in the same package.
Claim 40
Dependent Claim
120 words
A hybrid magnetic sensor wherein a magnetic sensor comprising a high resistance first compound semiconductor layer in that, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y , and a silicon monolithic integrated circuit chip are molded together in the same package.
Claim 41
Dependent Claim
74 words
A magnetic sensor as claimed in claim 33, wherein a second compound semiconductor layer is formed on the In x Ga 1-x As y Sb 1-y layer, and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y .
Claim 42
Dependent Claim
103 words
A semiconductor optical sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode for detecting light formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 43
Dependent Claim
103 words
A semiconductor optical sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode for detecting light formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 44
Dependent Claim
77 words
A semiconductor optical sensor as claimed in claim 35, wherein a high resistance second compound semiconductor layer is formed on the In x Ga 1-x As y Sb 1-y layer, and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y .
Claim 45
Dependent Claim
103 words
A semiconductor pressure sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode for detecting pressure formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 46
Dependent Claim
103 words
A semiconductor pressure sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode for detecting pressure formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 47
Dependent Claim
77 words
A semiconductor pressure sensor as claimed in claim 37, wherein a high resistance second compound semiconductor layer is formed on the In x Ga 1-x As y Sb 1-y layer, and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y .
Claim 48
Dependent Claim
103 words
A semiconductor strain sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode for detecting strain formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 49
Dependent Claim
103 words
A semiconductor strain sensor comprising a high resistance first compound semiconductor layer, a thin film layer of In x Ga 1-x As y Sb 1-y (0<x≦1.0, 0≦y≦1.0) grown on said first compound semiconductor layer, and an electrode for detecting strain formed on said In x Ga 1-x As y Sb 1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of the In x Ga 1-x As y Sb 1-y .
Claim 50
Dependent Claim
77 words
A semiconductor strain sensor as claimed in claim 39, wherein a high resistance second compound semiconductor layer is formed on the In x Ga 1-x As y Sb 1-y layer, and said second compound semiconductor layer has a lattice constant the same as or nearly the same as that of In x Ga 1-x As y Sb 1-y , and a band gap energy greater than that of In x Ga 1-x As y Sb 1-y .
References Cited (Backward Citations)
JPS58175833A
Cited
JPS6120378A
Cited
JPS61259583A
Cited
JPS63119590A
Cited
JPH0224033A
Cited
US4926154A
Cited
US4978938A
Cited
EP0450601A1
Cited
US5153557A
Cited
US5184106A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-25 | 1999-03-27 | 1999-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-25 | 2003-03-27 | 2003-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-25 | 2007-03-27 | 2007-09-26 | $7700.00 | Window Closed / Lapsed |