EP0450601A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Magnetoelectric transducer and process for producing the same
Assignee: Asahi Kasei Corp
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Filing: 1991-04-03
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Granted: —
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Expires: 2011-04-03
Abstract
Abstract An InAs thin film (2) formed by epitaxial growth on an insulating or semi-insulating substrate (1) has a structure in which a portion near the interface of the InAs thin film (2) with the substrate (1) is a lower electron mobility portion (21), and another portion more remote from that interface is a higher electron mobility portion (22). The thin film (2) is doped with donor impurity atoms in at least the high mobility portion (22). A magnetoelectric transducer has the InAs thin film (2) as a magneto-sensitive portion. A magnetic amplifying type magnetoelectric transducer has a body (10, 11) of a ferromagnetic material arranged in the vicinity of the magneto-sensitive portion (2).
Inventors
- 👤 Ichiro Shibasaki
- 👤 Takashi Ito
- 👤 Yuichi Kanayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 22:23
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
77 words
A magnetoelectric transducer, characterized by comprising: an insulating substrate; and an InAs thin film formed on said insulating substrate as a magneto-sensitive portion, wherein said InAs thin film is formed by epitaxial growth to a thickness of 0.2 to 1.4 µm and has two layers different in electron mobility with each other, said layers including a higher electron mobility layer and a lower electron mobility layer, said higher electron mobility layer being doped with a donor impurity.
Claim 2
Dependent Claim
31 words
A magnetoelectric transducer as claimed in claim 1, characterized in that said donor impurity is at least one element selected from the group consisting of Si, S, Ge, Se and Sn.
Claim 3
Dependent Claim
31 words
A magnetoelectric transducer as claimed in claim 1 or 2, further characterized by comprising a body of a ferromagnetic material arranged close to at least one side of said magneto-sensitive portion.
Claim 4
Dependent Claim
22 words
A magnetoelectric transducer as claimed in any of claims 1 to 3, characterized in that said magnetoelectric transducer is a Hall element.
Claim 5
Dependent Claim
103 words
A magnetoelectric transducing device, characterized by comprising: a magnetoelectric transducer including, an insulating substrate, and an InAs thin film formed on said insulating substrate as a magneto-sensitive portion, wherein said InAs thin film is formed by epitaxial growth to a thickness of 0.2 to 1.4 µm and has two layers different in electron mobility, said layers including a higher electron mobility layer and a lower electron mobility layer, said higher electron mobility layer being doped with a donor impurity; and a circuit element connected electrically with said magnetoelectric transducer; wherein said magnetoelectric transducer and said circuit element being formed in the same package.
Claim 6
Dependent Claim
123 words
A magnetoelectric transducing device, characterized by comprising: a magnetoelectric transducer including, an insulating substrate, and an InAs thin film formed on said insulating substrate as a magneto-sensitive portion, wherein said InAs thin film is formed by epitaxial growth to a thickness of 0.2 to 1.4 µm and has two layers different in electron mobility, said layers including a higher electron mobility layer and a lower electron mobility layer, said higher electron mobility layer being doped with a donor impurity, and further including a body of a ferromagnetic material arranged close to at least one side of said magneto-sensitive portion; and a circuit element connected electrically with said magnetoelectric transducer; wherein said magnetoelectric transducer and said circuit element being formed in the same package.
Claim 7
Dependent Claim
21 words
A magnetoelectric transducing device as claimed in claim 5 or 6, characterized in that said magnetoelectric transducer is a Hall element.
Claim 8
Dependent Claim
90 words
A magnetic switch, characterized by comprising: a magnetoelectric transducer including, an insulating substrate, and an InAs thin film formed on said insulating substrate as a magneto-sensitive portion, wherein said InAs thin film is formed by epitaxial growth to a thickness of 0.2 to 1.4 µm and has two layers different in electron mobility, said layers including a higher electron mobility layer and a lower electron mobility layer, said higher electron mobility layer being doped with a donor impurity; and means for applying a magnetic field to drive said magnetoelectric transducer.
Claim 9
Dependent Claim
110 words
A magnetic switch, characterized by comprising: a magnetoelectric transducer including, an insulating substrate, and an InAs thin film formed on said insulating substrate as a magneto-sensitive portion, wherein said InAs thin film is formed by epitaxial growth to a thickness of 0.2 to 1.4 µm and has two layers different in electron mobility, said layers including a higher electron mobility layer and a lower electron mobility layer, said higher electron mobility layer being doped with a donor impurity, and further including a body of a ferromagnetic material arranged close to at least one side of said magneto-sensitive portion, and means for applying a magnetic field to drive said magnetoelectric transducer.
Claim 10
Dependent Claim
20 words
A magnetic switch as claimed in claim 8 or 9, characterized in that said magnetoelectric transducer is a Hall element.
Claim 11
Dependent Claim
70 words
A process for producing a magnetoelectric transducer, characterized by comprising the steps of: forming an InAs thin film to a thickness of 0.2 to 1.4 µm on an insulating substrate by epitaxial growth, doping a higher electron mobility layer of said InAs thin film with donor impurity atoms, forming an electrode on a predetermined portion of said InAs thin film, and forming a pattern of a magneto-sensitive portion by etching.
Claim 12
Dependent Claim
36 words
A process as claimed in claim 11, further characterized by comprising the step of arranging a body of a ferromagnetic material on at least one side of said magneto-sensitive portion made of said InAs thin film.
Claim 13
Dependent Claim
47 words
A process as claimed in claim 11 or 12, characterized in that said step of forming said InAs thin film by epitaxial growth and the step of doping said higher electron mobility layer of said InAs thin film with said donor impurity atoms are carried out simultaneously.
References Cited (Backward Citations)
GB2081973A
Cited
US4568905A
Cited
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