US6531740B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated impedance matching and stability network
Assignee: NXP USA Inc
•
Filing: 2001-07-17
•
Granted: 2003-03-11
•
Expires: 2021-07-17
Abstract
Abstract An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.
Inventors
- 👤 Bruce Allen Bosco
- 👤 Rudy M. Emrick
- 👤 Steven James Franson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:56
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/08; H10D84/0107; H10D84/0109; H10W; H10W44/00; H10W44/501; H10W44/601
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
78 words
An impedance matching circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying a portion of the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; and said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate.
Claim 2
Dependent Claim
78 words
An impedance matching circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying a portion of the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; and said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate.
Claim 3
Dependent Claim
73 words
The impedance matching circuit of claim 1 wherein said impedance matching circuit comprising: a capacitor having two plates, said first plate coupled to an output of said active device, said second plate coupled to ground potential; a first inductor coupled to said first plate of said capacitor and coupled to said active device; and a second inductor coupled to said first plate of said capacitor and forming an output for said active device.
Claim 4
Dependent Claim
25 words
The impedance matching circuit of claim 2 wherein said second plate is coupled to ground potential by way of vias in said monocrystalline silicon substrate.
Claim 5
Dependent Claim
29 words
The impedance matching circuit of claim 2 wherein said second plate is coupled to ground potential by way of a highly conductive silicon region within said monocrystalline silicon substrate.
Claim 6
Dependent Claim
16 words
The impedance matching circuit of claim 1 wherein said active device is a high frequency transistor.
Claim 7
Dependent Claim
19 words
The impedance matching circuit of claim 1 wherein said active device is a Pseudomorphic High Electron Mobility Transistor (PHEMT).
Claim 8
Dependent Claim
16 words
The impedance matching circuit of claim 1 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
Claim 9
Dependent Claim
88 words
An impedance matching circuit and a stability circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate; and said stability circuit coupled to said impedance matching circuit.
Claim 10
Dependent Claim
88 words
An impedance matching circuit and a stability circuit integrated with an active device, comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; said active device formed within said monocrystalline compound semiconductor material; said impedance matching circuit coupled to said active device and at least in part formed within said silicon substrate; and said stability circuit coupled to said impedance matching circuit.
Claim 11
Dependent Claim
117 words
The impedance matching circuit and stability circuit of claim 8 , said impedance matching circuit comprising: a first capacitor having two plates, said first plate coupled to an output of said active device, said second plate coupled to ground potential; a first inductor coupled to said first plate of said first capacitor and coupled to said active device; and a second inductor coupled to said first plate of said first capacitor and forming an output for said active device; and said stability circuit comprising: a second capacitor having two plates, said second capacitor formed by having a first plate integrated with an input of said active device; and a resistor in parallel configuration to said second capacitor.
Claim 12
Dependent Claim
19 words
The impedance matching circuit and stability circuit of claim 8 wherein said active device is a high frequency transistor.
Claim 13
Dependent Claim
28 words
The impedance matching circuit and stability circuit of claim 10 wherein said second plate of said first capacitor is coupled to ground potential through vias in said substrate.
Claim 14
Dependent Claim
19 words
The impedance matching circuit and stability circuit of claim 10 wherein said resistor is fabricated on said silicon substrate.
Claim 15
Dependent Claim
21 words
The impedance matching circuit and stability circuit of claim 10 further comprising: a second resistor in parallel configuration with said resistor.
Claim 16
Dependent Claim
27 words
The impedance matching circuit and stability circuit of claim 10 wherein said resistor is fabricated by selectively depositing resistive material between said plates of said second capacitor.
Claim 17
Dependent Claim
28 words
The impedance matching circuit and stability circuit of claim 10 wherein said second plate is coupled to ground potential by way of vias in said monocrystalline silicon substrate.
Claim 18
Dependent Claim
32 words
The impedance matching circuit and stability circuit of claim 10 wherein said second plate is coupled to ground potential by way of a highly conductive silicon region within said monocrystalline silicon substrate.
Claim 19
Dependent Claim
22 words
The impedance matching circuit and stability circuit of claim 8 wherein said active device is a Pseudomorphic High Electron Mobility Transistor (PHEMT).
Claim 20
Dependent Claim
18 words
The impedance matching circuit and stability circuit of 8 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
Claim 21
Dependent Claim
18 words
The impedance matching circuit and stability circuit of 8 wherein said active device is a Metal-Semiconductor-Field-Effect Transistor (MESFET).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-10 | 2006-09-09 | 2007-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-10 | 2010-09-09 | 2011-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-10 | 2014-09-09 | 2015-03-11 | $7700.00 | Window Closed / Lapsed |