US6501121B1
Expired / Lapsed
US
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Semiconductor structure
Assignee: NXP USA Inc
•
Filing: 2000-11-15
•
Granted: 2002-12-31
•
Expires: 2020-11-15
Abstract
Abstract A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A) y (Ti x M 1-x ) 1-y O 3 , wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.
Inventors
- 👤 Zhiyi Yu
- 👤 Jamal Ramdani
- 👤 Ravindranath Droopad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B25/20; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10P14/63; H10P14/6326; H10P14/6349; H10P14/6921; H10P14/69215; H10P14/6939; H10P14/69396
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
60 words
A high dielectric constant device structure comprising: a monocrystalline semiconductor substrate; and a monocrystalline insulating layer overlying the substrate, the insulating layer comprising A y (Ti x M 1-x ) 1-y O 3 where A is an alkaline earth metal, M is an element selected from the group consisting of Al, Si, Er, La, Ga, and In, and 0<x<1, 0<y<1.
Claim 2
Dependent Claim
60 words
A high dielectric constant device structure comprising: a monocrystalline semiconductor substrate; and a monocrystalline insulating layer overlying the substrate, the insulating layer comprising A y (Ti x M 1-x ) 1-y O 3 where A is an alkaline earth metal, M is an element selected from the group consisting of Al, Si, Er, La, Ga, and In, and 0<x<1, 0<y<1.
Claim 3
Dependent Claim
25 words
The structure of claim 1 wherein the alkaline earth metal is selected from the group consisting of Ba, Sr, and combinations of Ba and Sr.
Claim 4
Dependent Claim
22 words
The structure of claim 1 further comprising a monocrystalline transition layer comprising an alkaline earth metal titanate underlying the monocrystalline insulating layer.
Claim 5
Dependent Claim
14 words
The structure of claim 3 wherein the monocrystalline transition layer comprises (Ba,Sr)TiO 3 .
Claim 6
Dependent Claim
19 words
The structure of claim 3 wherein the monocrystalline transition layer has a thickness of less than about 1 nm.
Claim 7
Dependent Claim
22 words
The structure of claim 1 wherein the monocrystalline insulating layer has an equivalent silicon dioxide thickness of less than about 1.5 nm.
Claim 8
Dependent Claim
16 words
The structure of claim 1 further comprising a conductive electrode formed overlying the monocrystalline insulating layer.
Claim 9
Dependent Claim
15 words
The structure of claim 7 further comprising an electrically conductive region formed in the substrate.
Claim 10
Dependent Claim
25 words
The structure of claim 1 wherein the monocrystalline semiconductor substrate comprises a semiconductor material selected from the group consisting of Si, Ge, Si—Ge, and GaAs.
Claim 11
Dependent Claim
27 words
The structure of claim 1 wherein the monocrystalline semiconductor substrate comprises a layer of semiconductor material selected from the group consisting of InGaAs, InAlAs, AlGaAs, and InGaP.
Claim 12
Dependent Claim
18 words
The structure of claim 1 wherein x is less than 1 and greater than or equal to 0.5.
Claim 13
Dependent Claim
15 words
The structure of claim 1 further comprising a template layer overlying the monocrystalline semiconductor substrate.
Claim 14
Dependent Claim
20 words
The structure of claim 12 wherein the template layer comprises 1-10 monolayers comprising oxygen and an alkaline earth metal element.
Claim 15
Dependent Claim
44 words
A high dielectric constant device structure comprising: a monocrystalline semiconductor substrate; and a monocrystalline oxide layer epitaxially grown overlying the substrate, the monocrystalline oxide layer comprising an alkaline earth metal titanate incorporating an additional material to increase the bandgap of the monocrystalline oxide layer.
Claim 16
Dependent Claim
44 words
A high dielectric constant device structure comprising: a monocrystalline semiconductor substrate; and a monocrystalline oxide layer epitaxially grown overlying the substrate, the monocrystalline oxide layer comprising an alkaline earth metal titanate incorporating an additional material to increase the bandgap of the monocrystalline oxide layer.
Claim 17
Dependent Claim
26 words
The device structure of claim 14 wherein the monocrystalline oxide layer comprises less than 50 atomic percent of the additional material relative to the titanium concentration.
Claim 18
Dependent Claim
21 words
The device structure of claim 14 wherein the alkaline earth metal titanate comprises (Ba,Sr)TiO 3 and the additional material comprises Al.
Claim 19
Dependent Claim
28 words
The device structure of claim 14 wherein the substrate comprises a semiconductor material selected from the group consisting of Si, Ge, Si—Ge, GaAs, AlGaAs, InAlAs, InGaAs, and InGaP.
Claim 20
Dependent Claim
16 words
The device structure of claim 14 further comprising a platinum electrode overlying the monocrystalline oxide layer.
Claim 21
Dependent Claim
26 words
The device structure of claim 14 wherein the monocrystalline oxide layer comprises less than 10 atomic percent of the additional material relative to the titanium concentration.
Claim 22
Dependent Claim
27 words
The device structure of claim 14 further comprising a monocrystalline transition layer underlying the monocrystalline oxide layer, the transition layer comprising an undoped alkaline earth metal titanate.
Claim 23
Dependent Claim
104 words
A high dielectric constant semiconductor device structure comprising: a monocrystalline silicon substrate; source, drain, and channel regions of a MOS transistor formed in the substrate; a monocrystalline gate dielectric epitaxially formed overlying the channel region, the gate dielectric compromising (A) y (Ti x M 1-x ) 1-y O 3 where A is an alkaline earth metal, M is an element selected from the group consisting of Al, Si, Er, La, Ga, and In, and x is less than 1 and greater than or equal to 0.5 and y is greater than zero and less than 1; and a gate electrode overlying the gate dielectric.
Claim 24
Dependent Claim
104 words
A high dielectric constant semiconductor device structure comprising: a monocrystalline silicon substrate; source, drain, and channel regions of a MOS transistor formed in the substrate; a monocrystalline gate dielectric epitaxially formed overlying the channel region, the gate dielectric compromising (A) y (Ti x M 1-x ) 1-y O 3 where A is an alkaline earth metal, M is an element selected from the group consisting of Al, Si, Er, La, Ga, and In, and x is less than 1 and greater than or equal to 0.5 and y is greater than zero and less than 1; and a gate electrode overlying the gate dielectric.
Claim 25
Dependent Claim
27 words
The semiconductor device structure of claim 21 wherein the alkaline earth metal comprises an element selected from the group consisting of Ba, Sr, and Ba and Sr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-12-30 | 2006-07-01 | 2006-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-30 | 2010-07-01 | 2010-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-12-30 | 2014-07-01 | 2014-12-31 | $7700.00 | Window Closed / Lapsed |