US6255198B1
Expired / Lapsed
US
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Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
Assignee: North Carolina State University
•
Filing: 1999-11-17
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Granted: 2001-07-03
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Expires: 2019-11-17
Abstract
Abstract A gallium nitride microelectronic layer is fabricated by converting a surface of a (111) silicon layer to 3C-silicon carbide. A layer of 3C-silicon carbide is then epitaxially grown on the converted surface of the (111) silicon layer. A layer of 2H-gallium nitride then is grown on the epitaxially grown layer of 3C-silicon carbide. The layer of 2H-gallium nitride then is laterally grown to produce the gallium nitride microelectronic layer. In one embodiment, the silicon layer is a (111) silicon substrate, the surface of which is converted to 3C-silicon carbide. In another embodiment, the (111) silicon layer is part of a Separation by IMplanted OXygen (SIMOX) silicon substrate which includes a layer of implanted oxygen that defines the (111) layer on the (111) silicon substrate. In yet another embodiment, the (111) silicon layer is a portion of a Silicon-On-Insulator (SOI) substrate in which a (111) silicon layer is bonded to a substrate. Lateral growth of the layer of 2H-gallium nitride may be performed by Epitaxial Lateral Overgrowth (ELO) wherein a mask is formed on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride. The layer of 2H-gallium nitride then is laterally grown through the at least one opening and onto the mask. A second, offset mask also may be formed on the laterally grown layer of 2H-gallium nitride and a second laterally grown layer of 2H-gallium nitride may be overgrown onto the offset mask. Lateral growth of the layer of 2H-gallium nitride also may be performed using pendeoepitaxial techniques wherein at least one trench and/or post is formed in a layer of 2H-gallium nitride to define at least one sidewall therein. The layer of 2H-gallium nitride is then laterally grown from the at least one sidewall. Pendeoepitaxial lateral growth preferably continues until the laterally grown sidewalls coalesce on the top of the posts or trenches. The top of the posts and/or the trench floors may be masked to promote lateral growth and reduce nucleation and vertical growth.
Inventors
- 👤 Kevin J. Linthicum
- 👤 Thomas Gehrke
- 👤 Robert F. Davis
- 👤 Darren B. Thomson
- 👤 Kieran M. Tracy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:42
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/8503; H10D62/82; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/276; H10P14/278; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3258; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3414; H10P14/3416; H10P14/36; H10P14/24; H10P14/38
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
77 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: bonding a (111) silicon layer to a substrate; converting a surface of the (111) silicon layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted surface of the (111) silicon layer; growing a layer of 2H-gallium nitride on the epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 2
Independent Claim
77 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: bonding a (111) silicon layer to a substrate; converting a surface of the (111) silicon layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted surface of the (111) silicon layer; growing a layer of 2H-gallium nitride on the epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 3
Dependent Claim
35 words
A method according to claim 1 wherein the silicon layer is a (111) silicon substrate and wherein the converting step comprises the step of: converting a surface of the (111) silicon substrate to 3C-silicon carbide.
Claim 4
Dependent Claim
34 words
A method according to claim 1 wherein the step of converting is preceded by the step of: implanting oxygen into a (111) silicon substrate to define the (111) layer on the (111) silicon substrate.
Claim 5
Dependent Claim
41 words
A method according to claim 1 wherein the step of converting comprises the step of chemically reacting the surface of the (111) silicon layer with a carbon containing precursor to convert the surface of the (111) silicon layer to 3C-silicon carbide.
Claim 6
Dependent Claim
26 words
A method according to claim 1 wherein the step of eptiaxially growing is followed by the step of thinning the epitaxially grown layer of 3C-silicon carbide.
Claim 7
Dependent Claim
61 words
A method according to claim 1 wherein the step of growing is preceded by the step of growing an aluminum nitride and/or gallium nitride layer on the epitaxially grown layer of 3C-silicon carbide, and wherein the step of growing comprises the step of: growing a layer of 2H-gallium nitride on the buffer layer, opposite the epitaxially grown layer of 3C-silicon carbide.
Claim 8
Dependent Claim
57 words
A method according to claim 1 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 9
Dependent Claim
53 words
A method according to claim 1 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 10
Dependent Claim
53 words
A method according to claim 1 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 11
Independent Claim
86 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: converting a surface of a (111) silicon substrate to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted surface of the (111) silicon substrate; thinning the epitaxially grown layer of 3C-silicon carbide growing a buffer layer on the thinned epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the buffer layer; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 12
Independent Claim
86 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: converting a surface of a (111) silicon substrate to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted surface of the (111) silicon substrate; thinning the epitaxially grown layer of 3C-silicon carbide growing a buffer layer on the thinned epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the buffer layer; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 13
Dependent Claim
41 words
A method according to claim 10 wherein the step of converting comprises the step of chemically reacting the surface of the (111) silicon substrate with a carbon containing precursor to convert the surface of the (111) silicon substrate to 3C-silicon carbide.
Claim 14
Dependent Claim
57 words
A method according to claim 10 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 15
Dependent Claim
53 words
A method according to claim 10 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 16
Dependent Claim
53 words
A method according to claim 10 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 17
Independent Claim
106 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: implanting oxygen into a (111) silicon substrate to define a (111) silicon surface layer on a (111) silicon substrate; converting at least a portion of the (111) silicon surface layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted (111) silicon surface layer; thinning the epitaxially grown layer of 3C-silicon carbide; growing a buffer layer on the thinned epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the buffer layer; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 18
Independent Claim
106 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: implanting oxygen into a (111) silicon substrate to define a (111) silicon surface layer on a (111) silicon substrate; converting at least a portion of the (111) silicon surface layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted (111) silicon surface layer; thinning the epitaxially grown layer of 3C-silicon carbide; growing a buffer layer on the thinned epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the buffer layer; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 19
Dependent Claim
24 words
A method according to claim 15 wherein the converting step comprises the step of converting the entire (111) silicon surface layer to 3C-silicon carbide.
Claim 20
Dependent Claim
42 words
A method according to claim 15 wherein the step of converting comprises the step of chemically reacting the (111) silicon surface layer with a carbon containing precursor to convert at least a portion of the (111) silicon surface layer to 3C-silicon carbide.
Claim 21
Dependent Claim
57 words
A method according to claim 15 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, thc mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 22
Dependent Claim
53 words
A method according to claim 15 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 23
Dependent Claim
53 words
A method according to claim 15 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 24
Independent Claim
103 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: bonding a (111) silicon substrate to a (100) silicon substrate; thinning the (111) silicon substrate to define a (111) silicon layer on the (100) silicon substrate; converting at least a portion of the (111) silicon layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted (111) silicon layer; growing a buffer nitride layer on the epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the buffer layer; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 25
Independent Claim
103 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: bonding a (111) silicon substrate to a (100) silicon substrate; thinning the (111) silicon substrate to define a (111) silicon layer on the (100) silicon substrate; converting at least a portion of the (111) silicon layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted (111) silicon layer; growing a buffer nitride layer on the epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the buffer layer; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 26
Dependent Claim
23 words
A method according to claim 21 wherein the converting step comprises the step of: converting the entire (111) silicon layer to 3C-silicon carbide.
Claim 27
Dependent Claim
19 words
A method according to claim 21 further comprising the step of: forming microelectronic devices in the (100) silicon substrate.
Claim 28
Dependent Claim
51 words
A method according to claim 21 further comprising the steps of: removing a portion of the 3C-silicon carbide layer, the gallium nitride layer and the gallium nitride microelectronic layer to expose a portion of the (100) silicon substrate; and fabricating microelectronic devices in the exposed portion of the (100) silicon substrate.
Claim 29
Dependent Claim
43 words
A method according to claim 21 wherein the step of converting comprises the step of chemically reacting the surface of the (111) silicon layer with a carbon containing precursor to convert at least a portion of the (111) silicon layer to 3C-silicon carbide.
Claim 30
Dependent Claim
57 words
A method according to claim 21 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 31
Dependent Claim
53 words
A method according to claim 21 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 32
Dependent Claim
53 words
A method according to claim 21 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 33
Dependent Claim
40 words
A method according to claim 24 wherein the step of fabricating comprises the steps of: epitaxially growing a silicon layer on the exposed portion of the (100) silicon substrate; and fabricating the microelectronic devices in the epitaxially grown silicon layer.
Claim 34
Dependent Claim
24 words
A method according to claim 29 wherein the step of epitaxially growing is preceded by the step of capping the gallium nitride microelectronic layer.
Claim 35
Independent Claim
65 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: bonding a (111) silicon layer to a substrate; epitaxially growing a layer of 3C-silicon carbide on a surface of the (111) silicon layer; growing a layer of 2H-gallium nitride on the epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 36
Independent Claim
65 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: bonding a (111) silicon layer to a substrate; epitaxially growing a layer of 3C-silicon carbide on a surface of the (111) silicon layer; growing a layer of 2H-gallium nitride on the epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 37
Dependent Claim
15 words
A method according to claim 31 wherein the silicon layer is a (111) silicon substrate.
Claim 38
Dependent Claim
35 words
A method according to claim 31 wherein the step of epitaxially growing is preceded by the step of: implanting oxygen into a (111) silicon substrate to define the (111) layer on the (111) silicon substrate.
Claim 39
Dependent Claim
26 words
A method according to claim 31 wherein the step of eptiaxially growing is followed by the step of thinning the epitaxially grown layer of 3C-silicon carbide.
Claim 40
Dependent Claim
61 words
A method according to claim 31 wherein the step of growing is preceded by the step of growing an aluminum nitride and/or gallium nitride layer on the epitaxially grown layer of 3C-silicon carbide, and wherein the step of growing comprises the step of: growing a layer of 2H-gallium nitride on the buffer layer, opposite the epitaxially grown layer of 3C-silicon carbide.
Claim 41
Dependent Claim
57 words
A method according to claim 31 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 42
Dependent Claim
53 words
A method according to claim 31 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 43
Dependent Claim
53 words
A method according to claim 1 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 44
Independent Claim
78 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: converting a surface of a (111) silicon layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted surface of the (111) silicon layer; thinning the epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the thinned epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 45
Independent Claim
78 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: converting a surface of a (111) silicon layer to 3C-silicon carbide; epitaxially growing a layer of 3C-silicon carbide on the converted surface of the (111) silicon layer; thinning the epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the thinned epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 46
Dependent Claim
35 words
A method according to claim 39 wherein the silicon layer is a (111) silicon substrate and wherein the converting step comprises the step of: converting a surface of the (111) silicon substrate to 3C-silicon carbide.
Claim 47
Dependent Claim
34 words
A method according to claim 39 wherein the step of converting is preceded by the step of: implanting oxygen into a (111) silicon substrate to define the (111) layer on the (111) silicon substrate.
Claim 48
Dependent Claim
41 words
A method according to claim 39 wherein the step of converting comprises the step of chemically reacting the surface of the (111) silicon layer with a carbon containing precursor to convert the surface of the (111) silicon layer to 3C-silicon carbide.
Claim 49
Dependent Claim
61 words
A method according to claim 39 wherein the step of growing is preceded by the step of growing an aluminum nitride and/or gallium nitride layer on the epitaxially grown layer of 3C-silicon carbide, and wherein the step of growing comprises the step of: growing a layer of 2H-gallium nitride on the buffer layer, opposite the epitaxially grown layer of 3C-silicon carbide.
Claim 50
Dependent Claim
57 words
A method according to claim 39 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 51
Dependent Claim
53 words
A method according to claim 39 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 52
Dependent Claim
53 words
A method according to claim 39 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 53
Independent Claim
66 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: epitaxially growing a layer of 3C-silicon carbide on a surface of a (111) silicon layer; thinning the epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the thinned epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 54
Independent Claim
66 words
A method of fabricating a gallium nitride microelectronic layer comprising the steps of: epitaxially growing a layer of 3C-silicon carbide on a surface of a (111) silicon layer; thinning the epitaxially grown layer of 3C-silicon carbide; growing a layer of 2H-gallium nitride on the thinned epitaxially grown layer of 3C-silicon carbide; and laterally growing the layer of 2H-gallium nitride to produce the gallium nitride microelectronic layer.
Claim 55
Dependent Claim
15 words
A method according to claim 47 wherein the silicon layer is a (111) silicon substrate.
Claim 56
Dependent Claim
35 words
A method according to claim 47 wherein the step of epitaxially growing is preceded by the step of: implanting oxygen into a (111) silicon substrate to define the (111) layer on the (111) silicon substrate.
Claim 57
Dependent Claim
61 words
A method according to claim 47 wherein the step of growing is preceded by the step of growing an aluminum nitride and/or gallium nitride layer on the epitaxially grown layer of 3C-silicon carbide, and wherein the step of growing comprises the step of: growing a layer of 2H-gallium nitride on the buffer layer, opposite the epitaxially grown layer of 3C-silicon carbide.
Claim 58
Dependent Claim
57 words
A method according to claim 47 wherein the step of laterally growing comprises the steps of: forming a mask on the layer of 2H-gallium nitride, the mask including at least one opening that exposes the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride through the at least one opening and onto the mask.
Claim 59
Dependent Claim
53 words
A method according to claim 47 wherein the step of laterally growing comprises the steps of: forming at least one trench in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
Claim 60
Dependent Claim
53 words
A method according to claim 39 wherein the step of laterally growing comprises the steps of: forming at least one post in the layer of 2H-gallium nitride that defines at least one sidewall in the layer of 2H-gallium nitride; and laterally growing the layer of 2H-gallium nitride from the at least one sidewall.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-07-02 | 2005-01-01 | 2005-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-02 | 2009-01-01 | 2009-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-02 | 2013-01-01 | 2013-07-03 | $7700.00 | Window Closed / Lapsed |