US4876210A
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Solution growth of lattice mismatched and solubility mismatched heterostructures
Assignee: DELAWARE A NOT-FOR-PROFIT CORP OF, University of
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Filing: 1988-03-04
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Granted: 1989-10-24
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Expires: 2008-03-04
Abstract
Abstract The effects of excessive lattice mismatch in solution grown heterostructures are reduced by incorporating a lattice graded interface layer between the substrate and the heteroepitaxial layer. The effects of lattice mismatch are also reduced by reducing the contact area with a selective growth mask which controls where growth initiates on the substrate. The effect of mismatched solubility is reduced by double saturation of the solvent and selective supersaturation of the solvent.
Inventors
- 👤 Allen M. Barnett
- 👤 John C. Zolper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10F71/00; H10F71/127; H10F71/1276; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/066; Y10S438/00; Y10S438/902; Y10S438/933; Y10S438/955; Y10S438/974
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
66 words
In a method of making semiconductor structures by solution growth of heterostructure layers wherein a heterostructure capping layer is solution grown on a substrate and is subsequently at last partially removed by dissolution during solution growth of a second, different heterostructure layer, the improvement comprising preparation of the substrate surface by the solution grown heterostructure capping layer to facilitate solution growth of the second heterostructure layer.
Claim 2
Dependent Claim
66 words
In a method of making semiconductor structures by solution growth of heterostructure layers wherein a heterostructure capping layer is solution grown on a substrate and is subsequently at last partially removed by dissolution during solution growth of a second, different heterostructure layer, the improvement comprising preparation of the substrate surface by the solution grown heterostructure capping layer to facilitate solution growth of the second heterostructure layer.
Claim 3
Dependent Claim
27 words
In a method of claim 1 wherein the substrate is Si, the capping layer is Ge or a Ge/Si alloy, and the second heterostructure layer is GaAs.
Claim 4
Dependent Claim
17 words
In a method of claim 2 wherein the GaAs heterostructure layer is made into a solar cell.
Claim 5
Dependent Claim
16 words
In a method of claim 1 wherein the surface preparation involves oxide removal from the substrate.
Claim 6
Dependent Claim
16 words
In a method of claim 1 wherein the surface preparation involves restructuring of the substrate surface.
Claim 7
Dependent Claim
31 words
In a method of claim 1 wherein the removal by dissolution of the heterostructure capping layer is incomplete so that an interface layer remains between the substrate and second heterostructure layer.
Claim 8
Dependent Claim
27 words
In a method of claim 6 wherein the substrate is Si, the capping layer is Ge or a Ge/Si alloy, and the second heterostructure layer is GaAs.
Claim 9
Dependent Claim
17 words
In a method of claim 7 wherein the GaAs heterostructure layer is made into a solar cell.
Claim 10
Dependent Claim
44 words
In a method of claim 6 wherein the heterostructure capping layer is grown on selected ares of the substrate, the growth area being defined by a selective growth mask, and the second heterostructure layer is grown on the same selected areas of the substrate.
Claim 11
Dependent Claim
33 words
In a method of claim 9 wherein the substrate is Si, the capping layer is Ge or a Ge/Si alloy, the second heterostructure layer is GaAs, and the growth mask is silicon dioxide.
Claim 12
Dependent Claim
17 words
In a method of claim 10 wherein the heterostructure GaAs layer is made into a light-emitting diode.
Claim 13
Dependent Claim
44 words
In a method of claim 1 wherein the heterostructure capping layer is grown on selected areas of the substrate, the growth area being defined by a selective growth mask, and the second heterostructure layer is grown on the same selected areas of the substrate.
Claim 14
Dependent Claim
33 words
In a method of claim 12 wherein the substrate is Si, the capping layer is Ge or a Ge/Si alloy, the second heterostructure layer is GaAs, and the growth mask is silicon dioxide.
Claim 15
Dependent Claim
17 words
In a method of claim 13 wherein the heterostructure GaAs layer is made into a light-emitting diode.
References Cited (Backward Citations)
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US4727047A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-10-23 | 1993-04-24 | 1993-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-23 | 1997-04-24 | 1997-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-23 | 2001-04-24 | 2001-10-24 | $7700.00 | Window Closed / Lapsed |