US4727047A
Expired / Lapsed
US
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Method of producing sheets of crystalline material
Assignee: Massachusetts Institute of Technology
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Filing: 1981-04-06
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Granted: 1988-02-23
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Expires: 2001-04-06
Abstract
Abstract A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated, and the substrate can optionally be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Inventors
- 👤 Carl O. Bozler
- 👤 John C. C. Fan
- 👤 Robert W. McClelland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:26
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/60; C30B33/00; H10F19/00; H10F19/40; H10F71/00; H10F71/121; H10F71/127; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0217; H10P72/00; H10P72/70; H10P72/74; H10P72/7412; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S117/903; Y10S117/904; Y10S117/905; Y10S117/915; Y10S148/00; Y10S148/026; Y10S148/048; Y10S148/054; Y10S148/09; Y10S148/135; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
109 words
A method for producing sheets of essentially single crystal material of device quality, comprising: a. forming a crystal growth mask on a crystallization substrate; b. depositing crystalline material at exposed areas of said substrate under conditions suitable to provide lateral growth of crystalline material over said mask; c. continuing lateral overgrowth until a sheet of essentially single crystal material having desired dimensions has formed; d. bonding a new substrate to the sheet of essentially single crystal material; e. separating said new substrate and sheet of essentially single crystal material from the crystallization substrate; and, f. optionally reusing the crystallization substrate to produce additional sheets of essentially single crystal material.
Claim 2
Independent Claim
109 words
A method for producing sheets of essentially single crystal material of device quality, comprising: a. forming a crystal growth mask on a crystallization substrate; b. depositing crystalline material at exposed areas of said substrate under conditions suitable to provide lateral growth of crystalline material over said mask; c. continuing lateral overgrowth until a sheet of essentially single crystal material having desired dimensions has formed; d. bonding a new substrate to the sheet of essentially single crystal material; e. separating said new substrate and sheet of essentially single crystal material from the crystallization substrate; and, f. optionally reusing the crystallization substrate to produce additional sheets of essentially single crystal material.
Claim 3
Dependent Claim
23 words
A method of claim 1 wherein said growth mask provides an unmasked area of said crystallization substrate comprising a plurality of parallel slits.
Claim 4
Dependent Claim
14 words
A method of claim 2 wherein said crystal growth mask comprises a carbonized photoresist.
Claim 5
Dependent Claim
12 words
A method of claim 1 wherein said crystalline material comprises gallium arsenide.
Claim 6
Dependent Claim
12 words
A method of claim 4 wherein said substrate comprises single-crystal gallium arsenide.
Claim 7
Dependent Claim
11 words
A method of claim 1 wherein said crystalline material comprises silicon.
Claim 8
Dependent Claim
11 words
A method of claim 6 wherein said substrate comprises single-crystal silicon.
Claim 9
Dependent Claim
27 words
A method of claim 1 wherein said substrate is oriented to provide a natural cleavage plane between its surface and the essentially single crystal sheet formed thereon.
Claim 10
Dependent Claim
12 words
A method of claim 8 wherein said crystalline material comprises gallium arsenide.
Claim 11
Dependent Claim
23 words
A method of claim 1 wherein said sheet of crystalline material is bonded to an additional substrate and removed from said new substrate.
Claim 12
Dependent Claim
12 words
A method of claim 10 wherein said crystalline material comprises gallium arsenide.
Claim 13
Independent Claim
156 words
A method of producing multiple sheets of essentially single crystal gallium arsenide of device quality from an essentially single crystal arsenide substrate, comprising: a. forming a crystal growth mask providing an unmasked area on said gallium arsenide substrate which comprises a plurality of parallel slits; b. epitaxially depositing gallium arsenide at exposed areas of said substrate employing a chloride deposition process under conditions to provide lateral growth of gallium arsenide material over said mask; c. continuing lateral overgrowth of said gallium arsenide material under conditions suitable to form a sheet of essentially single crystal gallium arsenide having the desired dimensions; d. bonding a second substrate to the sheet of essentially single crystal gallium arsenide material; e. separating the second substrate and sheet of essentially single crystal gallium arsenide material from the gallium arsenide substrate; and f. reusing the gallium arsenide crystallization substrate to produce additional sheets of essentially single crystal gallium arsenide by repeating steps a-e.
Claim 14
Independent Claim
156 words
A method of producing multiple sheets of essentially single crystal gallium arsenide of device quality from an essentially single crystal arsenide substrate, comprising: a. forming a crystal growth mask providing an unmasked area on said gallium arsenide substrate which comprises a plurality of parallel slits; b. epitaxially depositing gallium arsenide at exposed areas of said substrate employing a chloride deposition process under conditions to provide lateral growth of gallium arsenide material over said mask; c. continuing lateral overgrowth of said gallium arsenide material under conditions suitable to form a sheet of essentially single crystal gallium arsenide having the desired dimensions; d. bonding a second substrate to the sheet of essentially single crystal gallium arsenide material; e. separating the second substrate and sheet of essentially single crystal gallium arsenide material from the gallium arsenide substrate; and f. reusing the gallium arsenide crystallization substrate to produce additional sheets of essentially single crystal gallium arsenide by repeating steps a-e.
Claim 15
Dependent Claim
32 words
A method of claim 12 additionally including bonding a third substrate to the sheet of gallium arsenide formed and removing the third substrate and sheet of gallium arsenide from the second substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-22 | 1991-08-24 | 1992-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-22 | 1995-08-24 | 1996-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-22 | 1999-08-24 | 2000-02-23 | $7700.00 | Window Closed / Lapsed |