US3963539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Two stage heteroepitaxial deposition process for GaAsP/Si LED's
Assignee: International Business Machines Corp
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Filing: 1974-12-17
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Granted: 1976-06-15
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Expires: 1994-12-17
Abstract
Abstract A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei, but thin enough to avoid cracks in the epitaxial layer due to stress induced by thermal expansion. The thickness is generally between 1-2 mu . A second layer of GaP is then deposited using the standard halide transport process with thicknesses of 10-20 mu with the graded addition of AsH3, until the particularly desired design composition of GaAsP is obtained. A constant layer of GaAsP is grown on the graded layer.
Inventors
- 👤 Bernard M. Kemlage
- 👤 Jerry M. Woodall
- 👤 William C. Wuestenhoefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10H; H10H20/00; H10H20/80; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/059; Y10S148/067; Y10S148/072; Y10S148/119; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
82 words
A method of making a light emitting diode comprising the steps of: pyrolytically depositing a first layer of gallium phosphide on silicon to form a thin epitaxial film; depositing a graded second layer of GaP onto the first layer of GaP by the halide transport process with the bandgap of the GaP being altered by the addition of AsH 3 until a constant composition layer of GaAsP is achieved; and growing a constant composition layer of GaAsP at an appropriate LED wavelength.
Claim 2
Independent Claim
82 words
A method of making a light emitting diode comprising the steps of: pyrolytically depositing a first layer of gallium phosphide on silicon to form a thin epitaxial film; depositing a graded second layer of GaP onto the first layer of GaP by the halide transport process with the bandgap of the GaP being altered by the addition of AsH 3 until a constant composition layer of GaAsP is achieved; and growing a constant composition layer of GaAsP at an appropriate LED wavelength.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the silicon substrate is first subjected to a high temperature bake cycle in the range of 1100°C for approximately 2 minutes.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein the first layer is formed by pyrolytic deposition to a thickness in the range of 1 - 2 microns in thickness.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the pyrolytic deposition takes place in a temperature range of 750° to 1000°C.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein the second layer is deposited by the halide transport process to a thickness in the range of 10-20 microns in thickness on the first layer.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein the deposition by the halide transport process is in a temperature range of 700° - 850°C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |