Abstract A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal semiconductor, such as gallium phosphide. The preselected electroluminescent semiconductor material is then epitaxially deposited in single crystal form on the modified surface of the silicon wafer, a step which is not feasible without the modification of the silicon wafer surface. Preferably, the modification is achieved by epitaxially depositing a thin layer of semiconductor material whose lattice structure offers a substantially smaller disparity with the structure of the electroluminescent material than the existing disparity between the silicon wafer and the electroluminescent material.
The light emitting diode structure according to claim 1, wherein said Group III-V compound is selected from the group consisting of GaP, GaAs, and GaAsP.
Claim 2
Dependent Claim
192 words
A monolithic light emitting diode display, comprising a single crystal silicon substrate, a plurality of spaced-apart semiconductor p-n junction regions, each p-n junction region consisting of a single crystal layer, each said single crystal layer consisting essentially of a Group III-V compound for emission of light in response to electrical energization of the respective p-n junction, each said single crystal layer superposed on said substrate and having a crystal lattice constant different from the crystal lattice constant of said substrate, and a graded layer of single crystal semiconductor material interposed between and in adherent contact with each said first-named single crystal layer and said substrate ,said graded layer consisting of an alloy of silicon and germanium in which the germanium concentration varies from approximately zero mole percent at the boundary with said substrate to approximately ten mole percent at the boundary with each said first-named single crystal layer, said graded layer having a crystal lattice constant substantially matching the crystal lattice constant of said substrate at the boundary therebetween and having a crystal lattice constant substantially matching the crystal lattice constant of the respective first-named single crystal layer at the boundary therebetween.
Claim 3
Dependent Claim
26 words
The monolithic light emitting diode display according to claim 3, wherein said Group III-V compound is selected from the group consisting of GaP, GaAs, and GaAsP.