US4651407A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation
Assignee: Verizon Laboratories Inc
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Filing: 1985-05-08
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Granted: 1987-03-24
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Expires: 2005-05-08
Abstract
Abstract Junction field effect transistor and method of fabrication. An epitaxial layer of high resistivity N-type silicon is grown on a substrate of low resistivity silicon. A layer of silicon dioxide is grown on the surface of the epitaxial layer and selectively removed to expose silicon in a pattern of a plurality of parallel surface areas with parallel strips of silicon dioxide in between. A second epitaxial layer is deposited over the exposed surface areas and the strips of silicon dioxide. Barriers of silicon dioxide are formed in the second epitaxial layer extending from the surface to adjacent to but spaced from the edges of the buried strips. P-type conductivity imparting material is implanted and then diffused into the zones of the second epitaxial layer defined by adjacent barriers and overlying the buried strips to form gate regions. Each gate region has portions extending laterally between the adjacent barriers and the underlying strip to form a gate junction between each portion and the N-type silicon of the second epitaxial layer. N-type conductivity imparting material is ion implanted into the intervening zones to form source regions. Metal contacts are applied to the gate regions, the source regions, and the substrate.
Inventors
- 👤 Izak Bencuya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/012; H10D30/202; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/17; H10D62/343; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/088; Y10S148/111
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
413 words
The method of fabricating a junction field effect transistor comprising providing a body of semiconductor material including a first layer of semiconductor material of one conductivity type of relatively high resistivity and a second layer of semiconductor material of the one conductivity type of relatively low resistivity contiguous with said first layer, said first layer having a surface at a surface of the body; forming a layer of a nonconductive protective material at said surface; selectively removing nonconductive protective material of said layer to expose said underlying first layer of semiconductor material in a pattern of a plurality of parallel surface areas with parallel strips of said nonconductive protective material interposed therebetween, said strips having edges adjacent to the exposed surface areas; depositing an epitaxial layer of semiconductor material of the one conductivity type of relatively high resistivity on said layer of nonconductive protective material and the exposed parallel surface areas of said first layer; forming barriers of nonconductive protective material in portions of said epitaxial layer overlying the edges of said strips of nonconductive protective material, said barriers of nonconductive protective material extending from the surface of said epitaxial layer and being spaced from the underlying strips of nonconductive protective material; the portions of said epitaxial layer between adjacent barriers of nonconductive protective material and overlying said strips of nonconductive protective material being gate zones, and the intervening portions of said epitaxial layer between adjacent barriers of nonconductive protective material and overlying the previously exposed surface areas of said first layer being source zones; introducing conductivity type imparting material of the opposite conductivity type into said gate zones of said epitaxial layer at the surface thereof to convert regions of said epitaxial layer to said opposite conductivity type thereby forming gate regions of the opposite conductivity type, each of said gate regions having portions extending laterally between the adjacent barriers and the underlying strip of nonconductive protective material to form a gate junction between each of said portions of the gate region and semiconductor material of the one conductivity type of the epitaxial layer, each gate junction extending from a barrier of nonconductive protective material to a strip of nonconductive protective material; forming source regions of the one conductivity type of relatively low resistivity in regions of said source zones adjacent to the surface of the epitaxial layer; and applying conductive material to form electrical contacts in ohmic contact with said source and gate regions at the surface of said epitaxial layer.
Claim 2
Independent Claim
413 words
The method of fabricating a junction field effect transistor comprising providing a body of semiconductor material including a first layer of semiconductor material of one conductivity type of relatively high resistivity and a second layer of semiconductor material of the one conductivity type of relatively low resistivity contiguous with said first layer, said first layer having a surface at a surface of the body; forming a layer of a nonconductive protective material at said surface; selectively removing nonconductive protective material of said layer to expose said underlying first layer of semiconductor material in a pattern of a plurality of parallel surface areas with parallel strips of said nonconductive protective material interposed therebetween, said strips having edges adjacent to the exposed surface areas; depositing an epitaxial layer of semiconductor material of the one conductivity type of relatively high resistivity on said layer of nonconductive protective material and the exposed parallel surface areas of said first layer; forming barriers of nonconductive protective material in portions of said epitaxial layer overlying the edges of said strips of nonconductive protective material, said barriers of nonconductive protective material extending from the surface of said epitaxial layer and being spaced from the underlying strips of nonconductive protective material; the portions of said epitaxial layer between adjacent barriers of nonconductive protective material and overlying said strips of nonconductive protective material being gate zones, and the intervening portions of said epitaxial layer between adjacent barriers of nonconductive protective material and overlying the previously exposed surface areas of said first layer being source zones; introducing conductivity type imparting material of the opposite conductivity type into said gate zones of said epitaxial layer at the surface thereof to convert regions of said epitaxial layer to said opposite conductivity type thereby forming gate regions of the opposite conductivity type, each of said gate regions having portions extending laterally between the adjacent barriers and the underlying strip of nonconductive protective material to form a gate junction between each of said portions of the gate region and semiconductor material of the one conductivity type of the epitaxial layer, each gate junction extending from a barrier of nonconductive protective material to a strip of nonconductive protective material; forming source regions of the one conductivity type of relatively low resistivity in regions of said source zones adjacent to the surface of the epitaxial layer; and applying conductive material to form electrical contacts in ohmic contact with said source and gate regions at the surface of said epitaxial layer.
Claim 3
Dependent Claim
21 words
The method in accordance with claim 1 wherein said semiconductor material is silicon; and said nonconductive protective material is silicon dioxide.
Claim 4
Dependent Claim
65 words
The method in accordance with claim 2 wherein introducing conductivity type imparting material of the opposite conductivity type into said gate zones includes ion implanting conductivity type imparting material of the opposite conductivity type into the gate zones at the surface of the epitaxial layer; and heating to diffuse the ion implanted conductivity type imparting material of the opposite conductivity type into said gate regions.
Claim 5
Dependent Claim
64 words
The method in accordance with claim 3 wherein providing a body of semiconductor material includes providing a substrate of semiconductor material of the one conductivity type of relatively low resistivity having flat, planar, parallel, opposed major surfaces; and depositing an epitaxial layer of semiconductor material of the one conductivity type of relatively high resistivity of uniform thickness on a major surface of said substrate.
Claim 6
Dependent Claim
43 words
The method in accordance with claim 4 wherein forming source regions of the one conductivity type of relatively low resistivity includes ion implanting conductivity type imparting material of the one conductivity type into said source zones at the surface of said epitaxial layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-23 | 1990-09-22 | 1991-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-23 | 1994-09-22 | 1995-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-23 | 1998-09-22 | 1999-03-24 | $7700.00 | Window Closed / Lapsed |