US4036672A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a junction type field effect transistor
Assignee: Hitachi Ltd
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Filing: 1976-05-05
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Granted: 1977-07-19
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Expires: 1996-05-05
Abstract
Abstract In the manufacture of a vertical structure junction type field effect transistor, the formation of a gate region is followed by an oxidation treatment of the upper surface of the gate region and then by the growth of a semiconductor layer consisting of a monocrystalline region on the channel portion and a polycrystalline region on the oxide film formed on the gate region. The existence of the oxide film on the gate region prevents the out-diffusion of the impurity doped in the gate region, preventing the lowering of the breakdown voltage, and enabling a short channel length and small series resistance of the channel.
Inventors
- 👤 Sadao Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/83; H10D30/831; H10D62/00; H10D62/40; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/088; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
96 words
A method of manufacturing a junction type field effect transistor comprising the steps of: selectively forming, in a semiconductor substrate of a first conductivity type serving as a drain region, a gate region of a second conductivity type except the portion which serves as a channel region; masking the surface of said gate region with an insulating film; depositing a semiconductor layer of said first conductivity type on the surfaces of said insulating film and said semiconductor substrate; and forming a source region of said first conductivity type in a predetermined portion of said semiconductor layer.
Claim 2
Independent Claim
96 words
A method of manufacturing a junction type field effect transistor comprising the steps of: selectively forming, in a semiconductor substrate of a first conductivity type serving as a drain region, a gate region of a second conductivity type except the portion which serves as a channel region; masking the surface of said gate region with an insulating film; depositing a semiconductor layer of said first conductivity type on the surfaces of said insulating film and said semiconductor substrate; and forming a source region of said first conductivity type in a predetermined portion of said semiconductor layer.
Claim 3
Independent Claim
111 words
A method of manufacturing a vertical structure junction type field effect transistor comprising the steps of: forming, in a semiconductor substrate of a first conductivity type forming a drain region, a gate region of a second conductivity type except the portion forming a channel portion; forming a film masking the upper surface of said gate region, said film exhibiting the property of preventing the migration of impurity ions of the second conductivity type; epitaxially growing a channel region of the first conductivity type on the upper side of said channel portion and simultaneously a polycrystalline silicon layer on said film; and forming a source region in at least said epitaxial layer.
Claim 4
Independent Claim
111 words
A method of manufacturing a vertical structure junction type field effect transistor comprising the steps of: forming, in a semiconductor substrate of a first conductivity type forming a drain region, a gate region of a second conductivity type except the portion forming a channel portion; forming a film masking the upper surface of said gate region, said film exhibiting the property of preventing the migration of impurity ions of the second conductivity type; epitaxially growing a channel region of the first conductivity type on the upper side of said channel portion and simultaneously a polycrystalline silicon layer on said film; and forming a source region in at least said epitaxial layer.
Claim 5
Dependent Claim
14 words
A method according to claim 2, in which said film is an oxide film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-18 | 1981-01-17 | 1981-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-18 | 1985-01-17 | 1985-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-18 | 1989-01-17 | 1989-07-19 | $7700.00 | Window Closed / Lapsed |