Patent US3739210A successfully refreshed from Google Patents.
US3725751A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state target electrode for pickup tubes
Assignee: Sony Corp
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Filing: 1970-01-20
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Granted: 1973-04-03
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Expires: 1990-01-20
Abstract
Abstract A target using a diode array for pickup tubes which consists of a semiconductor substrate including on one surface thereof an array of regions, defining PN junctions with the major portion of the substrate formed from a vapor-deposited layer of the same conductivity type as the substrate and having a plurality of polycrystalline regions of low resistivity of conductivity type opposite to the substrate.
Inventors
- 👤 K Wakamiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:11
CPC Classifications
H; H10; H10P; H10P95/00; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H01J9/00; H01J9/20; H01J9/233; H10D; H10D99/00; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/122; Y10S257/00; Y10S257/926; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
152 words
A target electrode for pickup tubes comprising: a semiconductor substrate of one conductivity type; a plurality of seeding site areas formed on said substrate on one surface thereof; a vapor deposited layer formed on said one surface of said substrate and over said seeding sites and having an array of polycrystalline regions over said seeding site areas and single crystalline regions where said seeding site areas are not formed, the single crystalline regions being of the opposite conductivity type as that of the substrate; and an insulating layer formed over said vapor deposited area and having windows formed therein over said single crystal regions and said insulating layer not covering at least one of said polycrystalline regions and said one polycrystalline region being of the same conductivity type as that of the substrate and said substrate receiving light energy on its second surface whereby the conversion efficiency and frequency response is improved.
Claim 2
Dependent Claim
28 words
A target electrode for pickup tubes as claimed in claim 1 wherein said single crystal regions are of the same conductivity type as that of the semiconductor substrate.
Claim 3
Dependent Claim
34 words
A target electrode for pickup tubes as claimed in claim 1 wherein diffused regions of the same conductivity type as that of the semiconductor substrate are formed in the polycrystalline regions through said windows.
Claim 4
Dependent Claim
23 words
A semiconductivity target electrode according to claim 1 comprising regions of the one conductivity type formed in said polycrystalline regions through said windows.
Claim 5
Dependent Claim
24 words
A semiconductor target electrode according to claim 1 comprising regions of the one conductivity type formed through said windows in said single crystal regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-02 | 1976-10-02 | 1977-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-02 | 1980-10-02 | 1981-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-02 | 1984-10-02 | 1985-04-03 | $7700.00 | Window Closed / Lapsed |